• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1644-1648
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• 2002

The relationships between MgO deposition conditions and firing voltage of AC PDP were investigated as a function of ambient temperature. Substrate temperature and growth rate were selected as the major parameters that can affect the properties of MgO most significantly. Firing voltages increase with increasing temperature regardless of deposition conditions of the MgO layer. However, the relative magnitude of the firing voltage variation decrease with increasing substrate temperature and decreasing deposition speed. It was also found that the sample obtained at the condition of lower deposition rate shows better dynamic margin characteristics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1379-1382
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• 1997

Diamond-like carbon(DLC) thin films are produced by using a filtered cathodic vacuum arc(FCVA) deposition system. Different magnetic components, namely steering, focusing, and filtering plasma-optic systems, are used to achieve a stable arc plasma and to prevent the macroparticles from incorporating into the deposited films. Effects of magnetic fields on plasma behavior and film deposition are examined. The carbon ion energy is found to be varied by applying a negative (accelerating) substrate bias voltage. The deposition rate of DLC films is dependent upon magnetic field as well as substrate bias voltage and at a nominal deposition condition is about $2{\AA}/s$. The structural properties of DLC films, such as internal stress, relative fraction of tetrahedral($sp^3$) bonds, and surface roughness have also been characterized as a function of substrate bias voltages and partial gas($N_2$) pressures.

• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.156-159
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• 2011

SiNx:H films have been widely used for anti-reflection coatings and passivation for crystalline silicon solar cells. In this study, SiNx:H films were deposited using high frequency (13.56 MHz) direct plasma enhanced chemical vapor deposition, and the optical and passivation properties were investigated. The radio frequency power, the spacing between the showerhead and wafer, the $NH_3/SiH_4$ ratio, the total gas flow, and the $N_2$ gas flow were changed over certain ranges for the film deposition. The thickness uniformity, the refractive index, and the minority carrier lifetime were then measured in order to study the properties of the film. The optimal deposition conditions for application to crystalline Si solar cells are determined from the results of this study.

• 한국수자원학회:학술대회논문집
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• 한국수자원학회 2023년도 학술발표회
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• pp.447-447
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• 2023

Soil organic carbon (SOC) is a critical indicator of soil fertility. Its importance in maintaining ecological balance has received widespread attention. However, global temperatures have risen by 0.8℃ since the late 1800s due to human-induced greenhouse gas emissions, resulting in severe disruptions in SOC dynamics. To study the impacts of temperature variations on SOC and soil respiration, we used the Soil Carbon and Landscape co-Evolution (SCALE) model, which was capable of estimating the spatial distribution of soil carbon dynamics. The study site was located at Heshan Farm (125°20'10.5"E, 49°00'23.1"N), Nenjiang County in Heilongjiang Province, Northeast China. We validated the model using observed soil organic carbon and soil respiration in 2015 and achieved excellent agreement between observed and modeled variables. Our results showed considerable influences of temperature increases on SOC and soil respiration rates at both erosion and deposition areas. In particular, changes in SOC and soil respiration at the deposition area were greater than at the erosion area. Our study highlights that the impacts of temperature elevations are considerably dependent on soil erosion and deposition processes. Thus, it is important to implement effective soil conservation strategies to maintain soil fertility under global warming.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.595-596
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• 2010

• 대한전자공학회논문지
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• 제24권2호
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• pp.238-241
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• 1987

ITO thin film was prepared by the electroless deposition technique. ITO thin film had a high transmittance in the visible region and a high reflectance in the near infrared region. The energy gap of the thn film (Sn/Im=0.1) was 4.05 eV, the carrier concentration was 2x10**21 cm**-3, and the electric resistivity was 1.5x10**-3 ohm-cm. We confirmed that ITO thin film was a degenerated n-type semiconductor.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.243-243
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• 2010

$CN_x$ films fabricated by different deposition techniques to synthesize of $\beta-C_3N_4$ involve two problems; nitrogen deficiency and $sp^2$ hybridized bonding. Nitrogen contents in most of the thin films are lower than stoichiometric composition 57%

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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• pp.140-140
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• 1999

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.549-554
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• 2009

Al thin films were synthesized on TiN/Si substrate by MOCVD using N-methylpyrrolidine alane (MPA) precursor. Effects of substrate temperature, reaction pressure on the deposition rate, surface roughness and electrical resistivity were investigated. The early stage of Al thin film formation was analyzed by in-situ surface reflectivity measurement with a laser and photometer apparatus. From the Arrhenius plot of deposition rate vs. substrate temperature, it was found that the activation energy of surface reaction was 91.1kJ/mole, and the transition temperature from surface-reaction-limited region to mass-transfer-limited region was about $150^{\circ}C$. The growth rate increased with the reaction pressure, and average growth rates of $200{\sim}1,200nm/min$ were observed at various experimental conditions. Surface roughness of the film increased with the film thickness. The electrical resistivity of Al film was about $4{\mu}{\Omega}{\cdot}cm$ in the case of optimum condition, and it was close to the value of the bulk Al, $2.7{\mu}{\Omega}{\cdot}cm$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.349-350
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• 2008

In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) /2,9-Dimethy 1-4,7-diphenyl-1,10-phenanthroline (BCP)/tris (8-hydroxyquinoline)aluminum$(Alq_3)$/Al device, we studied the efficiency improvement of organic light-emitting diodes due to thickness variation of BCP materials used for a electron breaking layer. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5\times10^{-6}$Torr using a thermal evaporation. The TPD and $Alq_3$ layer were evaporated to be at a deposition rate of 2.0 A/s. The BCP was evaporated to be at a deposition of 1.0 A/s. When the thickness of BCP increased from 5 to 30 nm, we found that the luminous efficiency and the external quantum efficiency is superior to the others when the thickness of BCP is 20 nm. Compared to the ones from the devices made without BCP, the luminous efficiency and the external quantum efficiency was improved by 57 %, 70%, respectively.