• 대한기계학회논문집B
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• 제28권12호
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• pp.1632-1639
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• 2004

Numerical calculation has been performed to investigate the transport phenomena in the horizontal reactor which has two different gas inlets for MOCVD(metalorganic chemical vapor deposition). The full elliptic governing equations for continuity, momentum, energy and chemical species are solved by using the commercial code FLUENT. It is investigated how thermal characteristics, reactor geometry, and the operating parameters affect flow fields, mass fraction of each reactants. The numerical simulations demonstrate that flow rate of each species, inlet geometry of the reactor, and its distance from the susceptor as well as the inclination of upper wall of reactor can be used effectively to optimize reactor performance. The commonly used idealized boundary conditions are also investigated to predict flow phenomena in the actual deposition system.

• 한국재료학회지
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• 제27권7호
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• pp.364-368
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• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.419-424
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• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.264-264
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• 2007

$B_2Mg_{2/3}/Nb_{4/3}O_7\;(B_2MN)$ thin films and $Bi_{3/2}MgNb_{3/2}O_7\;(B_{1.5}MN)$ thin films were deposited as a function of various deposition temperatures on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system. Both of their thin films are shown to crystalline phase at $500^{\circ}C$, deposition temperature, using 100W RF power. The composition of them and structural micro properties are investigated by RBS spectrum and SEM, AFM. 200 nm-thick $B_2MN$ thin films were deposited at room temperature had capacitance density of $151nF/cm^2$ at 100kHz, dissipation factor of 0.003 and had capacitance density of $584nF/cm^2$ at 100kHz, dissipation factor of 0.0045 at $500^{\circ}C$ deposition temperature. Both of their dielectric constant deposited at room temperature and at $500^{\circ}C$ were each approximately 40 and 100.

• Bulletin of the Korean Chemical Society
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• 제15권1호
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• pp.79-83
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• 1994

The organometallic chemical vapor deposition of single precursors, $[Me_2Al({\mu}-NHR)]_2\;(R=^iPr,\;^tBu)$, for alumininum nitride thin films has been investigated to evaluate their poroperties as potential precursors. In chemical vapor deposition processes the gas phase products scattered from a Ni(100) substrate were analyzed by mass spectrometry and the deposited films were characterized by X-ray photoelectron spectroscopy (XPS). The optimum temperatures for the formation of AlN films have been found to be between 700 K and 800 K. Carbon contamination of the films seems to be attributed mainly to the methyl groups bonded to the aluminum atoms. It is apparent that $^tBu$ group is better than $^iPr$ group as a substituent on the nitrogen atom of the single precursors for the AlN thin film formation.

• 한국광학회지
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• 제3권1호
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• pp.50-54
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• 1992

마스크를 사용하지 않고 레이저 $(CW Ar^+$ laser, $\lambda=514.5nm)$ 광속을 이용하여 불산 용액이 첨가된 황산구리 전해질 용액내의 실리콘(Si, 100) 단결정 표면에 구리를 침착시켰으며, 이들 사이에서 일어나는 화학 반응식을 도금에서와 같이 양극 반응과 음극 반응으로 구분 하여 제안하였다. 또한 침착 되는 구리점의 직경을 전해질 용액에 첨가되는 불산용액의 양, 레이저 광속의 조사 시간과 관속의 세기에 따라 측정 분석하였다. p형 실리콘 단결정의 경우, 연속형 $Ar^+$ 레이저를 조사하였을때 구리 침착이 일어나고 펄스형 레이저 광속(Nd:YAG 레이저에 KDP결정을 사용하여 얻은 2차 고조파, $\lambda=530nm, $\tau=25nsce$)을 조사하였을 경우에는 침착이 일어나지 않았다. 그와는 반대로 n형 실리콘 단결정의 경우, 연속형 $Ar^+$ 레이저를 조사하였을 때는 구리 침착이 일어나지 않았으나, 펄스형 레이저 광속을 조사시켰을 경우에는 구리 침착이 일어남을 관찰하였다.

• 한국표면공학회지
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• 제57권1호
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• pp.49-56
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• 2024

Superhydrophobic surfaces have been expected to be able to provide considerable performance improvements and introduce innovative functions across diverse industries. However, representative methods for fabricating superhydrophobic surfaces include etching the substrate or attaching nanosized particles, but they have been limited by problems such as applicability to only a few materials or low adhesion between particles and substrates, resulting in a short lifetime of superhydrophobic properties. In this work, we report a novel coating technique that can achieve superhydrophobicity by electrophoretic deposition of aluminum nitride (AlN) nanopowders and their self-bonding to form a surface structure without the use of binder resins through a hydrolysis reaction. Furthermore, by using a water-soluble adhesive as a temporary shield for the electrophoretic deposited AlN powders, hierarchical aluminum hydroxide structures can be strongly adhered to a variety of electrically conductive substrates. This binder-free technique for creating hierarchical structures that exhibit strong adhesion to a variety of substrates significantly expands the practical applicability of superhydrophobic surfaces.

• 센서학회지
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• 제15권2호
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• pp.84-89
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• 2006

Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.

• Journal of Forest and Environmental Science
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• 제32권2호
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• pp.212-218
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• 2016

The research was conducted windward of an irrigated Acacia amplicips Maslin windbreak established to protect As Salam Cement Plant from winds and moving sands. Two belts with approximate optical porosities of 50% and 20% were studied in River Nile State, Sudan. The research aimed at assessing the efficiency of the two belts in wind speed reduction and sand deposition. Research methods included: (i) estimation of optical porosity, (ii) measurements of windward wind speeds at a control and at distances of 0.5 h (h stands for windbreak height), 1 h and 2 h at two vertical levels of 0.25 h and 0.5 h, (iii) estimation of relative wind speeds at the three positions (distance and height) at windward and (iv) estimation of wind erosive forces and prediction of zones of sand deposition. Results show that while the two belts reduced windward wind speeds at the two levels for the three distances, belt II was more effective. Nearest sand deposition occurred at 2 h and 1h windward of belt II and belt I, respectively, at level 0.25 h. At level 0.5 h, sand was deposited only at 2 h windward of belt II and no sand deposition occurred windward of belt I. The study concludes that less porous windbreaks are more effective in reducing wind speed and in depositing sand in windward direction at a distance of not less than twice the belt height.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.381.1-381.1
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• 2014

In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).