• 한국진공학회:학술대회논문집
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• 한국진공학회 1997년도 제13회 학술발표회 논문개요집
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• pp.23-23
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• 1997

• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 춘계학술발표회
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• pp.158-158
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• 1992

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.148-148
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• 1999

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.16-16
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• 1999

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1998년도 춘계학술발표회 초록집
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• pp.148-149
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• 1998

• 조명전기설비학회논문지
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• 제25권4호
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• pp.79-87
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• 2011

In this paper, the best conditions for the deposition of the high quality diamond thin-film from N-hexane as a carbon source in the microwave plasma process was carried out. Major parameters are the deposition time, flow rates of oxygen and hexane. The deposition time for the steady state thin-film was required more than 4[h], and the suitable flow rates of hexane and oxygen for the high-quality thin-film are 0.4[sccm] and 0.1~0.2[sccm], respectively. In addition, amorphous carbons such as DLC and graphite were grown by increasing the flow rate of hexane, and it decreased by increasing the flow rate of oxygen. Specifically, the growth rate is about 1.5[${\mu}mh-1$] under no addition of oxygen and it decreased about 60[%] as ca. 1.0[${\mu}mh-1$] with oxygen.

• Transactions on Electrical and Electronic Materials
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• 제10권5호
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• pp.147-151
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• 2009

For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 $\AA$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$. Five PECVD process parameters are designed to lower the refractive index and lower the deposition rate of $Si_3N_4$ films for the high breakdown electric field. For the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the atomic force microscopy (AFM) root mean square (RMS) value of about 2000 $\AA$ $Si_3N_4$ on the bottom metal is lowest at 0.862 nm and the breakdown electric field is highest at about 8.0 MV/cm with a capacitance density of 326.5 pF/$mm^2$. A pretreatment of metal electrodes is proposed, which can reduce the peeling of nitride in the harsh test environment of heat, pressure, and humidity.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2002년도 춘계학술발표회 초록집
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• pp.46-46
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• 2002

It is well known that thin film growth and surface morphology can be substantially modified by ion-bombardment during the deposition. This is particularly important in case of thin-film deposition at low temperatures where the film growth occurs under highly nonequilibrium conditions. An attractive way to promote crystalline growth and surface morphology is deposition of additional energy in to the surface of the growing film by bombardment with hyperthermal particles. We were deposited crystalline Ti and TiN thin films on Si substrate by magnetron sputtering method with grid. Its thin films were highly smoothed and dense as increasing grid bias. In order explore the benefits of a bombardment of the growing film with high energetic particles. Ti and TiN films were deposited on Si substrates by an unbalanced magnetron sputter source with attached grid assembly for energetic ion extraction. Also, we have studied the variation of the plasma states by Langmuir probe and Optical Emission Spectroscopy (OES). The epitaxial orientation. microstructual characteristics. electrical and surface properties of the films were analyzed by XRD. SEM. Four point probe and AFM.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1127-1130
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• 2003

The characteristics of silicon nitride films deposited in a planar coil reactor using a simple high-density inductively coupled plasma chemical vapor deposition technique have been investigated. The process gases used during silicon nitride deposition cycle were pure nitrogen and a mixture of silane and helium. It has been pointed out that the strong H-atom released from the growing SiN film and Si-N bond healing are responsible for the improved electrical and passivation properties of SiN.

• Asian-Australasian Journal of Animal Sciences
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• 제12권7호
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• pp.1096-1103
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• 1999

A study was conducted to clarify the impact of recombinant porcine somatotropin (pST) on the efficiency of absorbed nitrogen use for protein deposition in growing pigs. Three levels of dietary crude protein (9.0, 11.5, 14.0% CP) were used. Each had either a sub-optimum or near optimum lysine: CP concentration (Low-lysine, 3.8 g/100 g CP and High-lysine, 5.5 g/100g CP) in order to achieve different metabolic efficiencies for nitrogen deposition (ca. 45 vs. 60%). Twelve crossbred female pigs $(59{\pm}4kg\;BW)$ were placed in metabolism cages and fitted with bladder catheters. Each pig received an excipient injection daily for the first 10-d, a pST (5 mg/d) injection for the second 10-d, and then excipient for the last 10-d. Pigs were randomly assigned to one of six dietary treatments (2 pigs/diet) and fed 4 times per d at $92g/kg\;BW^{0.75}$ $(3{\times}maintenance)$. Means for the excipient period were compared to means for the pST period. Urinary nitrogen (N) output declined in pST-treated pigs (p<0.01) irrespective of dietary protein content or lysine level. Nitrogen retention increased by an average of 11% (p<0.01) with pST treatment (726 vs. $803mg\;N/kg^{0.75}\;BW/d$). Forty-eight percent of the absorbed N was retained with Low-lysine diets, but this increased to 53% with pST injection (+11%, p<0.01). Pigs fed High-lysine diets retained 62% of absorbed N which increased to 69% with pST (+11% p<0.01). the addition of lysine improved N use by 27% (High vs. Low, p<0.01), but the effect of lysine and pST was additive (+40%). Therefore, pST improves N retention and the efficiency of apparently absorbed N use in growing pigs (>60kg). It does so with diets having the potential for either low or high efficiencies of N use (48% and 62%). More work is needed to determine if the partial efficiency of N use improves in direct proportion to pST dose since the improvement in protein deposition is a function of pST dose.