• Asian-Australasian Journal of Animal Sciences
• /
• v.14 no.8
• /
• pp.1138-1143
• /
• 2001

A total of 96 piglets were weaned at 19 and 13 days in Exp. 1 and 2, respectively, and allotted to one of four diets: three with different spray dried plasmas (SPs) and one with hydrolysed casein (HC). SPs were from pigs (SPP), mixed origin (SMP), and mixed origin with standardized level of immunoglobulins (SMPIG). All the diets contained 1.7% total lysine, 25% of the test protein source, 45% corn starch, 15% lactose, 2% sucrose, 7% soybean oil. At d 4 and d 2 in Exp. 1 and 2, respectively, piglets were perorally challenged with $10^{10}$ CFU E. coli K88. Growth performance, immunity, and health condition were measured for 15 days and 14 days in Exp. 1 and 2, respectively. To investigate apparent ileal digestibility and nutrient deposition, all piglets were sacrificed at d 14 in Exp. 2. In 1. 3 piglets died in HC diet and 1 in SPP diet. HC diet showed higher mortality (p<0.01) than other diets. In Exp. 2, no clinical sign of infection was detected, no difference for the content of E. coli K88 was found in feces at 4 and 6 days after the infection, and no E. coli K88 was found in the jejunum at the end of experiment. In both experiments, feed intake was lower for HC diet and ADG was 96, 106, 122 and 155 for HC, SPP, SMP and SMPIG diet, respectively (HC vs others, p<0.05; SMPIG vs other SP, p<0.01). Heal apparent digestibility of nitrogen in sacrificed piglets was higher for HC diet (p<0.05). After the challenge, K88-specific titers in saliva (Exp. 1) and in plasma (Exp. 2) were reduced in SMP and SMPIG. The piglets positive to the adhesion of the used E. coli strain to the intestinal brush borders had a significantly reduced growth (p<0.01) and a higher K88-specific IgA titer in plasma, in comparison with negative ones. This effect was independent of the diet. The data show the relevance of spray dried plasma sources and particularly of SP with standardized level of immunoglobulins for the feeding of early-weaned at the risk of infection by enterotoxigenic bacteria.

• Journal of Sensor Science and Technology
• /
• v.4 no.1
• /
• pp.51-63
• /
• 1995

Polycrystalline $CdS_{1-x}Se_{x}$ thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study $CdS_{1-x}Se_{x}$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, CdSe samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure which had the lattice constant $a_{0}=4.1364{\AA}$, $c_{0}=6.7129{\AA}$ in CdS and $a_{0}=4.3021{\AA}$, $c_{0}=7.0142{\AA}$ in CdSe, respectively. Hall effect on these samples was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity(${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Applied Chemistry for Engineering
• /
• v.23 no.4
• /
• pp.377-382
• /
• 2012

CdS thin films have been widely used as a buffer layer of CIGS semiconductor solar cells to reduce the lattice mismatch between transparent electrode and absorber layer. In order to prepare the CdS films with high transparency and low resistivity, they were deposited by varying Cd concentration with the constant S concentration in the solution using chemical bath deposition method. They were analyzed in terms of structural, optical and electrical properties of CdS films according to the $[S^{2-}]/[Cd^{2+}]$ ratio. In the case of Cd concentration higher than S concectration, CdS thin films were formed mainly by cluster- by-cluster formation due to the homogeneous reaction between Cd and S in the solution. Therefore the grain size increased and the transmittance decreased. On the other hand, in the case of Cd concentration lower than S concentration, CdS films were formed by heterogeneous reaction on the substrate rather than in the solution. The CdS films have the grains with the uniform circular shape of a few hundreds ${\AA}$. As the Cd concentration increased in the solution, the $[S^{2-}]/[Cd^{2+}]$ ratio decreased and the resistivity decreased by the increase in the carrier concentration due to the formation S vacancy by the excess Cd.

• Applied Chemistry for Engineering
• /
• v.23 no.1
• /
• pp.1-7
• /
• 2012

In this article, I will introduce recent developments of environmental-friendly materials fabricated using atomic layer deposition (ALD). Advantages of ALD include fine control of the thin film thickness and formation of a homogeneous thin fim on complex-structured three-dimensional substrates. Such advantages of ALD can be exploited for fabricating environmental-friendly materials. Porous membranes such as anodic aluminum oxide (AAO) can be used as a substrate for $TiO_2$ coating with a thickness of about 10 nm, and the $TiO_2$-coated AAO can be used as filter of volatile organic compound such as toluene. The unique structural property of AAO in combination with a high adsorption capacity of amorphous $TiO_2$ can be exploited in this case. $TiO_2$ can be also deposited on nanodiamonds and Ni powder, which can be used as photocatalyst for degradation of toluene, and $CO_2$ reforming of methane catalyst, respectively. One can produce structures, in which the substrates are only partially covered by $TiO_2$ domains, and these structures turns out to be catalytically more active than bare substrates, or complete core-shell structures. We show that the ALD can be widely used not only in the semiconductor industry, but also environmental science.

• Journal of Hydrogen and New Energy
• /
• v.17 no.2
• /
• pp.166-173
• /
• 2006

Catalytic reforming of $CO_2$ by $CH_4$ over Ni-YSZ based catalysts was investigated to produce syngas as raw material of high valued chemicals and develop high performance catalyst electrode for an internal reforming of $CO_2$ in SOFC system. Ni-YSZ based catalysts were prepared using physical mixing and maleic acid methods to improve catalytic activity and inhibition of carbon deposition. The catalysts before and after the reaction were characterized by $N_2$ physisorption, TPR(temperature programed reduction), XRD and impedance analyzer. The conversions for $CO_2$ and $CH_4$ over Ni-MgO catalyst showed 90% but much amount of carbon deposition was detected on catalyst surface. On the other hand, the conversions for $CO_2$ and $CH_4$ over NiO-YSZ-$CeO_2$ catalyst showed 100% and 85% respectively, and carbon deposition on catalyst surface was inhibited under the tested condition. It was concluded that NiO-YSZ-$CeO_2$ catalyst is a promising candidate for the catalytic reforming of $CO_2$ and the internal reforming in SOFC system.

• Journal of Environmental Science International
• /
• v.2 no.2
• /
• pp.123-133
• /
• 1993

Shingal reservoir is a relatively small (211ha) and shallow impoundment, and approximately 25 ha of its sediment is exposed after spring drawdown. At least 14 vascular p13n1 species germinate on the exposed sediment, but Persimria vulgaris Webb et Moq. quickly dominates the vegetation. In order to estimate the role of the vegetation in the dynamics of heavy metal pollutants in the reservoir, Cu concentration of water, fallout particles, exposed sediment, and tissues of p. vulgaris, Ivas analyzed. Cu content in reservoir water decreased from $13.10mg/m^2$ on May 15 (before dralvdown) to $3.08mg/m^2$ in June 1 (after drawdown), mainly due to the loiwering of water level. Average atmospheric deposition of Cu by fallout particles was $10.84 {\mu}g/m^2/day$. Cu content in the surface 15cm of exposed sediment decreased from $5.094g1m^2$ right after drawdown, to $0.530g/m^2$ in 41 days, which is a 89.6% decrease. Therefore up to 99.7% of Cu in the reservoir appears to exist in the sediment. only 0.3% in water If the rate of atmospheric Input by fallout particles is assumed to have been the same since 1958, when the reservoir was completed, cumulative input of Cu during the 38 years would have been $150.35mg/m^2$, which is only 3.0% of Cu content in sediment right after drawdown. Therefore, most of Cu in the Shingal reservoir must have been transported by the Shingal-chun flowing into the reservoir, Standing crop of vegetation on the exposed sediment 41 days after drawdown was $730.67g/m^2$, of which 630.91g/m2 was p. vulgaris alone, and Cu content in P vulgaris at this time was $6.612mg/m^2$. This was only 0.13% of Cu in the exposed sediment, but was 50.5% of Cu in water before drawdown, or 167% of the average annual input of Cu by atmospheric deposition. If other plants were assumed to absorb Cu to the same concentration as p. vulgaris, total amount of Cu absorbed in 41 days by vegetation on the exposed sediment is estimated to be 1913.3 g, which is a considerable contribution to the purification of the reservoir water.

• KEPCO Journal on Electric Power and Energy
• /
• v.1 no.1
• /
• pp.175-180
• /
• 2015

A facile soft chemical synthesis route is used to grow nano-buds of copper hydroxide [$Cu(OH)_2$] thin films on stainless steel substrate[SS]. Besides different chemical methods for synthesis of $Cu(OH)_2$ nanostructure, the chemical bath deposition (CBD) is attractive for its simplicity and environment friendly condition. The structural, morphological, and electro-chemical properties of $Cu(OH)_2$ thin films are studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), cyclic voltammetry (CV) and galvanostatic charge-discharge (GCD) measurement techniques. The results showed that, facile chemical synthesis route allows to form the polycrystalline, granular nano-buds of $Cu(OH)_2$ thin films. The electrochemical properties of $Cu(OH)_2$ thin films are studied in an aqueous 1 M KOH electrolyte using cyclic voltammetry. The sample exhibited supercapacitive behavior with $340Fg^{-1}$ specific capacitance. Moreover, electrochemical capacitive measurements of $Cu(OH)_2/SS$ electrode exhibit a high specific energy and power density about ${\sim}83Wh\;kg^{-1}$ and ${\sim}3.1kW\;kg^{-1}$, respectively, at $1mA\;cm^{-2}$ current density. The superior electrochemical properties of copper hydroxide ($Cu(OH)_2/SS$) electrode with nano-buds like structure mutually improves pseudocapacitive performance. This work evokes scalable chemical synthesis with the enhanced supercapacitive performance of $Cu(OH)_2/SS$ electrode in energy storage devices.

• Journal of Sensor Science and Technology
• /
• v.2 no.1
• /
• pp.3-10
• /
• 1993

Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2017.05a
• /
• pp.166-166
• /
• 2017

금속 재료 중 철강은 기계적 특성이 우수하고 대량생산이 가능하여 선박, 건축, 자동차 등 다양한 분야에 기초재료로써 널리 사용되고 있다. 그러나 스테인리스강 등과 같은 일부 특수한 용도의 강을 제외하고는 부식환경에 취약한 특성을 가지기 때문에 내식성을 향상을 위한 표면처리에 관한 연구가 활발히 진행되고 있다. 가장 일반적으로 습식법(wet process)을 통해 표면상에 아연(Zn)을 도금해 사용하며, 아연이 자체적으로 포함한 희생양극(sacrificial anode) 및 차폐(barrier) 효과가 철강의 부식을 방지하게 된다. 하지만 산업의 고도화에 따라 더욱 가혹해진 노출환경으로 인해 고내식 강재에 대한 수요가 점차 증가하고 있으며, 아연코팅 층의 두께를 증가하여 내식성을 확보하는 방안은 미래 환경 및 자원적인 측면에서 근본적인 해결책으로 제시하기 어려움이 있다. 한편, 건식 프로세스(wet process)로 대별되는 PVD(physical vacuum deposition)에 의해 내식성을 향상시키고자 하는 연구들이 다양하게 진행되고 있다. 이것은 표면에 고순도 양질의 금속 막을 형성시킴으로써 외부환경과의 반응을 효과적으로 제어가 가능하며, 형성된 막은 그 물질의 고유 특성뿐만 아니라 제작 조건에 따른 표면의 기하학적 혹은 결정학적 구조에 의해 크게 영향을 받게 된다. 본 연구에서는 실용금속 중 이온화 경향이 가장 크고 산소와 반응하여 투과성이 작은 산화 피막 형성이 유리한 마그네슘(Mg)을 활용해 표면의 전기화학적 특성을 향상시켰다. 또한 금속 증착 중 진공도조절을 위해 도입되는 불활성 가스로 아르곤(Ar) 및 질소($N_2$)를 사용하여 표면에 형성한 막의 모폴로지 및 결정배향성이 내식성에 미치는 상관관계를 해석하고자 하였다. 실험방법으로 PVD법 중 비교적 간편하고 기초적인 지침을 제시하기 적합할 것으로 고려된 진공증착(vacuum evaporation)법을 이용해 아르곤 및 질소 분위기에서 진공도를 조절하며 용융아연도금상 Mg막을 형성하였다. 제작조건별 막의 기초 특성을 분석하기위해 SEM, EDS, XRD를 이용하였고, 결정배향성(crystal orientation) 분석을 위해 면간격(d-value)과 상대강도(relative intensity)를 확인하였다. 또한 내식성 평가로 염수분무(salt sprat test) 및 양극분극(anode polarization)을 각각 실시하였다. 실험결과에 따르면, Ar 및 $N_2$ 모두에서 가스압이 증가할수록 코팅층의 증착량은 적어지고 입상정(granular structure)의 모폴로지 형성 및 면간격과 상대강도가 증가하는 것이 확인되었다. 또한 쳄버 내 동일 진공도에서, $N_2$ 도입 시 Mg막은 더욱 치밀하고 미세한 입상정의 모폴로지로 형성되며 면간격과 상대강도는 더욱 증가한 것으로 나타났다. 내식성 평가에서 저진공 $N_2$ 조건에서 형성시킨 막이 가장 우수한 내식성이 나타났는데, 이는 상대적으로 불안정하고 반응하기 유리한 입계면적을 많이 포함한 입상정 모폴로지 및 표면에너지가 높은면의 면점유율 증가로 인해 외부환경과의 신속한 반응은 물론 안정적인 피막형성이 용이하였기 때문일 것으로 사료된다. 이상으로 Ar 및 $N_2$ 가스압 조건에 따른 고내식 Mg 막의 유효성을 확인하였고 향후 내식성을 향상시키는 방법으로 응용 가능할 것으로 생각된다.

• Korean Journal of Materials Research
• /
• v.1 no.1
• /
• pp.46-53
• /
• 1991

The stress of PSG (Phosphosilicate glass), USG (Undoped-silicate grass) and SiN films, which are mainly used as passivation layers in semiconductor memory devices, deposited by CVD methods has been studied as a function of film thickness and holding time in air. The stress of the PSG film or the USG film is increased in tensile state with increasing film thickness. On the other hand the stress level of the SiN film in compressive stress does not change as film thickness changes. The stress of PSG film shows the drastic change from the tensile stress to the compressive stress after the film is left 2 days in air. FTIR spectra indicated that the stress variation was due to the penetration of water molecule. It looks possible to recover the stress of about $2.5{\times}{10^9}dyne/cm^2$ by annealing treatment at $300^{\circ}C$ for 20min. The total stress of multi-layered films having the PSG film is determined mainly by the stress variation of PSG layer with holding time. The total stress of multi-layered film appears to have a functional relationship with the stress in the thickness of each film. The resistance against stress-migration of sputtered Al line increases with increasing the tensile stress for the PSG film or the USG film.