• 제목/요약/키워드: Mutual Capacitance

검색결과 25건 처리시간 0.022초

Efficient Multi-Touch Detection Algorithm for Large Touch Screen Panels

  • Mohamed, Mohamed G.A.;Cho, Tae-Won;Kim, HyungWon
    • IEIE Transactions on Smart Processing and Computing
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    • 제3권4호
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    • pp.246-250
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    • 2014
  • Large mutual capacitance touch screen panels (TSP) are susceptible to display and ambient noise. This paper presents a multi-touch detection algorithm using an efficient noise compensation technique for large mutual capacitance TSPs. The sources of noise are presented and analyzed. The algorithm includes the steps to overcome each source of noise. The algorithm begins with a calibration technique to overcome the TSP mutual capacitance variation. The algorithm also overcomes the shadow effect of a hand close to TSP and mutual capacitance variation by dynamic threshold calculations. Time and space filters are also used to filter out ambient noise. The experimental results were used to determine the system parameters to achieve the best performance.

Mutual Coupling Capacitance and Cross-talk in TFT-LCD

  • Yun, Young-Jun;Jung, Soon-Shin;Kim, Tae-Hyung;Roh, Won-Yeol;Choi, Jong-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.71-72
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    • 2000
  • The design of large area thin film transistor liquid crystal displays (TFT-LCDs) requires consideration of cross-talks between the data lines and pixel electrodes. These limits are imposed by the mutual coupling capacitances present in a pixel. The mutual coupling capacitance causes a pixel voltage error. In this study, semi-empirical model, which is adopted from VLSI interconnection capacitance calculations, is used to calculate mutual coupling capacitances. With calculated mutual coupling capacitances and arbitrary given image pattern, the root mean square (RMS) voltage of pixel is calculated to see vertical cross-talk from the first to the last column. The information obtained this study can be utilized to design the larger area and finer image quality panel.

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상호 유도 정전하 방식 ITO 센서의 노드별 측정 데이터를 이용한 ITO패턴과 노드 검사 방법 (A Method of Inspecting ITO Pattern and Node Using Measured Data of Each Node's Mutual Capacitance ITO Sensor)

  • 한주동;문병준;최경진;김동한
    • 전자공학회논문지
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    • 제51권7호
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    • pp.230-238
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    • 2014
  • 본 논문에서는 상호 유도 정전하 방식 ITO센서의 불량 여부를 판별하기 위해 ITO센서 내부의 전극막들이 이루고 있는 개별 노드에 대해 상호 유도 정전하 데이터를 이용하여 ITO센서의 정확한 분석과 검사가 가능한 방법을 제안한다. 모바일과 태블릿과 같은 소형 전자제품뿐만 아니라, 대형 전자제품에서도 입력 장치로 사용되는 상호 유도 정전하 방식 ITO센서의 구조적 특성을 분석하고 터치스크린 패널 IC를 이용해 ITO센서를 검사하기 위한 회로를 설계한다. 상호유도 정전하의 충전과 방전에 관련된 변수를 설정하고, ITO센서의 노드별 데이터를 통해 불량 발생 시 정확한 위치를 찾아 분석할 수 있도록 구현한다. 상호 유도 정전하 ITO센서의 1차 실험데이터를 통해 양품 유효 범위를 설정하고, 마지막으로 1차 실험을 통해 설정된 ITO센서 유효범위는 2차 실험을 통해 ITO센서의 노드별 측정 데이터를 이용하여 실험에 사용된 시료로 정확성과 효율성을 검증 한다.

RF회로의 Interconnection Parameter 추출법에 관한 연구 (A Study on the Interconnection Parameter Extraction Method in the Radio Frequency Circuits)

  • 정명래;김학선
    • 한국전자파학회논문지
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    • 제7권5호
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    • pp.395-407
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    • 1996
  • In this paper, we describe the crossover of the parasitic capacitance at the interconnections for the system miniature, analyse ground capacitance and mutual capacitance due to actually coupled line in the ICs or MCMs. From the results of deviding interconnection line with infinite parts, using Green's function with image charge method and moments, we could obtain 70% decrease of system runtime parasitic inductance because of simplicity of transforming formular.

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A Fully-Differential Correlated Doubling Sampling Readout Circuit for Mutual-capacitance Touch Screens

  • Kwon, Kihyun;Kim, Sung-Woo;Bien, Franklin;Kim, Jae Joon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권3호
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    • pp.349-355
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    • 2015
  • A fully-differential touch-screen sensing architecture is presented to improve noise immunity and also support most multi-touch events minimizing the number of amplifiers and their silicon area. A correlated double sampling function is incorporated to reduce DC offset and low-frequency noises, and a stabilizer circuit is also embedded to minimize inherent transient fluctuations. A prototype of the proposed readout circuit was fabricated in a $0.18{\mu}m$ CMOS process and its differential operation in response to various touch events was experimentally verified. With a 3.3 V supply, the current dissipation was 3.4 mA at normal operation and $140{\mu}A$ in standby mode.

TFT-LCD 특성에 미치는 Capacitive Cross-talk의 영향에 대한 시뮬레이션 (Simulations of Capacitive Cross-talk Effects on TFT-LCD Operational Characteristics)

  • 윤영준;정순신;김태형;최종선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.557-560
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    • 1999
  • The design of large area thin film transistor liquid crystal displays (TFT-LCDs) requires consideration of cross-talks between the data lines and pixel electrodes. These limits are imposed by the parasitic capacitive elements present in a pixel. The capacitive coupling of the data line signal onto the pixel causes a pixel voltage error. In this study semi-empirical capacitance model which is adopted from VLSI interconnection capacitance calculations was used to calculate mutual coupling capacitances. With calculated mutual coupling capacitances and given image pattern, the root mean square(RMS) voltage of pixel is calculated to see vertical cross-talk from the first to the last column. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

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등가회로를 이용한 전력용 변압기의 과도응답 특성 해석 (Analysis of Impulse Response of Power Transformer using Electric Equivalent Circuit)

  • 장경운;한송엽
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부A
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    • pp.97-99
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    • 1998
  • This paper presents a numerical study of the behavior of the transformer winding, when stressed by the standard impulse voltage. The mathematical model of the transformer takes several points into the account. Capacitance of not adjacent winding as well as adjacent winding, eddy current loss caused by self and mutual inductance given as the functions of frequency. Not like the previous approach where calculation of capacitance is performed, in average sense. In this paper, capacitance of both adjacent and not adjacent winding is calculated using the numerical approach(B.E.M.), so they can get the more accurate value of capacitance. Because of frequency dependency of inductance, numerical-laplace-transform technique is required. Finally, to validate this approach, a simple test winding is simulated.

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MIC를 위한 2선 및 3선 결합선로의 Quasi TEM Mode 정수계산

  • 류범;김청식;진년강
    • 한국통신학회:학술대회논문집
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    • 한국통신학회 1986년도 춘계학술발표회 논문집
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    • pp.194-197
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    • 1986
  • The normal mode parameters of microstrip coupled lines are datermined from the self and mutual capacitance and inductance of microstrip lines. In this paper, these capacitance are computed by using the relaxation method based on Quas1-TEM model for shoelded structure. Using these results, the normal mode parameters of two and three microstrip coupled lines are obtained.

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구형 마이크로스트립 안테나의 H-Plane 상호결합 (H-Plane Coupling Between Rectangular Microstrip antennas)

  • 고지환;조영기;손현
    • 대한전자공학회논문지
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    • 제22권6호
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    • pp.46-52
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    • 1985
  • 본 논문은 구형 마이크로스트립 안테나의 H-plane 상호결합에 관한 연구이다. 두 안테나의 상호결합을 계산하기 위해서 단일 마이크로스트립 패치의 교사저항을 구하였으며 결합된 전송선로를 even mode와 add mode로 분발하여 각 mode의 특성저항와 실효 유전률을 계산하였다. 이로부터 자계적으로 결합된 안테나를 S-band 주파수에서 S-parameter를 구한 결과 이론치와 실험치가 거의 일치함을 확인할 수 있었다.

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Radio Frequency 회로 모듈 BGA 패키지 (Electrical Characterization of BGA interconnection for RF packaging)

  • 김동영;우상현;최순신;지용
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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    • pp.96-99
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    • 2000
  • We presents a BGA(Ball Grid Array) package for RF circuit modules and extracted its electrical parameters. We constructed a BGA package of ITS(Intelligent Transportation System) RF module and examined electrical parameters with a HP5475A TDR(Time Domain Reflectometry) equipment and compared its electrical parasitic parameters with PCB RF circuits. With a BGA substrate of 3 $\times$ 3 input and output terminals, we have found that self capacitance of BGA solder ball is 68.6fF, self inductance 146pH, mutual capacitance 10.9fF and mutual inductance 16.9pH. S parameter measurement with a HP4396B Network Analyzer showed the resonance frequency of 1.55㎓ and the loss of 0.26dB. Thus, we may improve electrical performance when we use BGA package structures in the design of RF circuit modules.

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