• Title/Summary/Keyword: Mutual Capacitance

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Efficient Multi-Touch Detection Algorithm for Large Touch Screen Panels

  • Mohamed, Mohamed G.A.;Cho, Tae-Won;Kim, HyungWon
    • IEIE Transactions on Smart Processing and Computing
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    • v.3 no.4
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    • pp.246-250
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    • 2014
  • Large mutual capacitance touch screen panels (TSP) are susceptible to display and ambient noise. This paper presents a multi-touch detection algorithm using an efficient noise compensation technique for large mutual capacitance TSPs. The sources of noise are presented and analyzed. The algorithm includes the steps to overcome each source of noise. The algorithm begins with a calibration technique to overcome the TSP mutual capacitance variation. The algorithm also overcomes the shadow effect of a hand close to TSP and mutual capacitance variation by dynamic threshold calculations. Time and space filters are also used to filter out ambient noise. The experimental results were used to determine the system parameters to achieve the best performance.

Mutual Coupling Capacitance and Cross-talk in TFT-LCD

  • Yun, Young-Jun;Jung, Soon-Shin;Kim, Tae-Hyung;Roh, Won-Yeol;Choi, Jong-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.71-72
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    • 2000
  • The design of large area thin film transistor liquid crystal displays (TFT-LCDs) requires consideration of cross-talks between the data lines and pixel electrodes. These limits are imposed by the mutual coupling capacitances present in a pixel. The mutual coupling capacitance causes a pixel voltage error. In this study, semi-empirical model, which is adopted from VLSI interconnection capacitance calculations, is used to calculate mutual coupling capacitances. With calculated mutual coupling capacitances and arbitrary given image pattern, the root mean square (RMS) voltage of pixel is calculated to see vertical cross-talk from the first to the last column. The information obtained this study can be utilized to design the larger area and finer image quality panel.

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A Method of Inspecting ITO Pattern and Node Using Measured Data of Each Node's Mutual Capacitance ITO Sensor (상호 유도 정전하 방식 ITO 센서의 노드별 측정 데이터를 이용한 ITO패턴과 노드 검사 방법)

  • Han, Joo-Dong;Moon, Byoung-Joon;Choi, Kyung-Jin;Kim, Dong-Han
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.7
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    • pp.230-238
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    • 2014
  • In this paper, we propose the possible way of accurate analysis and examination of ITO sensor to discriminate whether mutual capacitance ITO sensor is defective by using mutual capacitance of data in each node which consists of electrodes inside of ITO sensor. We have analyzed the structure characteristic of mutual capacitance ITO sensor which is used as an input device for not only small size electronics like mobile phone and tablets but also big size electronics and designed the circuit to inspect ITO sensor using touch screen panel IC. Set a variable related with mutual capacitance of charge and discharge and Implement to find and analyze accurate position when defect is made through the data from each node of ITO sensor. First, we can set a yield effective range through the first experiment data of mutual capacitance ITO sensor and by using the data of each node of ITO sensor which is the result from the second experiment, we can verify accuracy and effectiveness of effective range from the first experiment as a sample which is used in this experiment.

A Study on the Interconnection Parameter Extraction Method in the Radio Frequency Circuits (RF회로의 Interconnection Parameter 추출법에 관한 연구)

  • 정명래;김학선
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.7 no.5
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    • pp.395-407
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    • 1996
  • In this paper, we describe the crossover of the parasitic capacitance at the interconnections for the system miniature, analyse ground capacitance and mutual capacitance due to actually coupled line in the ICs or MCMs. From the results of deviding interconnection line with infinite parts, using Green's function with image charge method and moments, we could obtain 70% decrease of system runtime parasitic inductance because of simplicity of transforming formular.

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A Fully-Differential Correlated Doubling Sampling Readout Circuit for Mutual-capacitance Touch Screens

  • Kwon, Kihyun;Kim, Sung-Woo;Bien, Franklin;Kim, Jae Joon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.3
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    • pp.349-355
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    • 2015
  • A fully-differential touch-screen sensing architecture is presented to improve noise immunity and also support most multi-touch events minimizing the number of amplifiers and their silicon area. A correlated double sampling function is incorporated to reduce DC offset and low-frequency noises, and a stabilizer circuit is also embedded to minimize inherent transient fluctuations. A prototype of the proposed readout circuit was fabricated in a $0.18{\mu}m$ CMOS process and its differential operation in response to various touch events was experimentally verified. With a 3.3 V supply, the current dissipation was 3.4 mA at normal operation and $140{\mu}A$ in standby mode.

Simulations of Capacitive Cross-talk Effects on TFT-LCD Operational Characteristics (TFT-LCD 특성에 미치는 Capacitive Cross-talk의 영향에 대한 시뮬레이션)

  • 윤영준;정순신;김태형;최종선
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.557-560
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    • 1999
  • The design of large area thin film transistor liquid crystal displays (TFT-LCDs) requires consideration of cross-talks between the data lines and pixel electrodes. These limits are imposed by the parasitic capacitive elements present in a pixel. The capacitive coupling of the data line signal onto the pixel causes a pixel voltage error. In this study semi-empirical capacitance model which is adopted from VLSI interconnection capacitance calculations was used to calculate mutual coupling capacitances. With calculated mutual coupling capacitances and given image pattern, the root mean square(RMS) voltage of pixel is calculated to see vertical cross-talk from the first to the last column. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

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Analysis of Impulse Response of Power Transformer using Electric Equivalent Circuit (등가회로를 이용한 전력용 변압기의 과도응답 특성 해석)

  • Chang, Kyung-Woon;Hahn, Song-Yop
    • Proceedings of the KIEE Conference
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    • 1998.11a
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    • pp.97-99
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    • 1998
  • This paper presents a numerical study of the behavior of the transformer winding, when stressed by the standard impulse voltage. The mathematical model of the transformer takes several points into the account. Capacitance of not adjacent winding as well as adjacent winding, eddy current loss caused by self and mutual inductance given as the functions of frequency. Not like the previous approach where calculation of capacitance is performed, in average sense. In this paper, capacitance of both adjacent and not adjacent winding is calculated using the numerical approach(B.E.M.), so they can get the more accurate value of capacitance. Because of frequency dependency of inductance, numerical-laplace-transform technique is required. Finally, to validate this approach, a simple test winding is simulated.

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MIC를 위한 2선 및 3선 결합선로의 Quasi TEM Mode 정수계산

  • Ryu, Beom;Kim, Cheong-Sik;Chin, Yeon-Kang
    • Proceedings of the Korean Institute of Communication Sciences Conference
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    • 1986.04a
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    • pp.194-197
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    • 1986
  • The normal mode parameters of microstrip coupled lines are datermined from the self and mutual capacitance and inductance of microstrip lines. In this paper, these capacitance are computed by using the relaxation method based on Quas1-TEM model for shoelded structure. Using these results, the normal mode parameters of two and three microstrip coupled lines are obtained.

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H-Plane Coupling Between Rectangular Microstrip antennas (구형 마이크로스트립 안테나의 H-Plane 상호결합)

  • Ko, Ji-Whan;Cho, Young-Ki;Son, Hyon
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.22 no.6
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    • pp.46-52
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    • 1985
  • A theoretical study of mutual coupling effects between two H-plane coupled microstrip patch antennas is presented. The radiation resistance and slot capacitance of a single micro-strip patch are calculated. To investigate the mutual coupling effects, the even and odd mode characteristic impedance and effective dielectric constants are obtained using the coupled microstrip line model. The S-parameter matrix elements 511,512 are used to study the mutual coupling e(facts in S-band frequency ranges for various patch spacings. Theoretical results and measurements are in good agreement.

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Electrical Characterization of BGA interconnection for RF packaging (Radio Frequency 회로 모듈 BGA 패키지)

  • Kim, Dong-Young;Woo, Sang-Hyun;Choi, Soon-Shin;Jee, Yong
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.96-99
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    • 2000
  • We presents a BGA(Ball Grid Array) package for RF circuit modules and extracted its electrical parameters. We constructed a BGA package of ITS(Intelligent Transportation System) RF module and examined electrical parameters with a HP5475A TDR(Time Domain Reflectometry) equipment and compared its electrical parasitic parameters with PCB RF circuits. With a BGA substrate of 3 $\times$ 3 input and output terminals, we have found that self capacitance of BGA solder ball is 68.6fF, self inductance 146pH, mutual capacitance 10.9fF and mutual inductance 16.9pH. S parameter measurement with a HP4396B Network Analyzer showed the resonance frequency of 1.55㎓ and the loss of 0.26dB. Thus, we may improve electrical performance when we use BGA package structures in the design of RF circuit modules.

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