• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.237-238
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• 2007

A new strain analysis model, so called the stress matched model, in an epitaxial multilayer system is proposed. The model makes it possible to know the strain, the stress, the elastic strain energy in each epitaxial layer. Analytical formulas of strain parameters in each epitaxial layer are derived under assumptions that the substrate thickness is finite and the in-plane lattice constant is the same for all epitaxial layers for dislocation free growth. As an example, the model is applied to a 405nm InGaN/InGaN multiple quantum well laser diode. Analysis result shows that AlxGa1-xN layer with Al mole fraction of 0.06 and the thickness of 6${\mu}m$ is one of good templates for a laser. In fact, this layer structure coincides with experimentally optimized one.

• Progress in Superconductivity and Cryogenics
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• v.4 no.1
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• pp.50-54
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• 2002

Penetration depth of Nb electrodes in $Nb/A1O_x/Nb$ Josephson junctions has been measured by resistive method. For a given applied field, the total flux through the junction is temperature dependent because the penetration depth of Nb electrode varies with temperature. If the total flux equals an integral multiple of the flux quantum at certain temperatures, resistive peaks appear at those temperatures. The penetration depth of Nb can be determined by applying the above condition, The temperature dependence of penetration depth was found to be well described by the two-fluid model.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.2
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• pp.44-46
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• 2000

Near-field photocurrent experiments were performed for GaAs/AIGaAs MQWs at room temperature. Heavy hole and light hole related peaks are clearly resolved even under extremely low power of near-field excitation. By scanning laterally 2 $\mu\textrm{m}$${\times}$2 $\mu\textrm{m}$ area on the surface, minority carrier diffusion process in the well region was qualitatively studied.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.60-66
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• 1992

The electronic subband structure and the envelope wave function for three types of superlattices are calculated with a new method. Comparison of the results of this method with those of other methods has proved the validity of this method. In particullas, the results of saw-toothed superlattices show that the change of the effective mass with position must be considered. Therefore this method can be easily applied to arbitrily shaped superlattices and multiple quantum well structures.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.127-130
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• 2006

사파이어 기판위에 MOCVD (metal organic chemical vapor deposition)를 이용하여 8주기의 InGaN/GaN 다중양자우물(multiple quantum well : MQW)구조가 성장되어졌고 이 구조 위에 p-GaN층이 형성됐다. 다시 p-GaN 위에 200nm의 두께를 갖는 PMMU 박막을 도포하고 electron beam lithography system을 이용하여 직경이 150nm가 되도록 나노단위의 삼각격자 구조를 가진 구멍을 패턴하고 inductively coupled plasma(ICP)를 이용하여 식각을 하여 광결정을 제작하였다. 광결정은 두께가 26nm이고 격자간격은 460nm로서 파장이 450nm인 파란빛을 나노회절 시켜서 photoluminescence(PL)의 세기를 강화시킨다.

• Journal of the Optical Society of Korea
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• v.16 no.2
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• pp.157-161
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• 2012

This work reports the stability of the resonant characteristics in multimode interferometer coupled square ring semiconductor cavities. Based on the analysis of single square ring cavities, the single mode operations in the multimode interferometer coupled ring cavities are analyzed and the devices are demonstrated on the semiconductor multiple quantum well epitaxial structure. By varying the lasing conditions such as substrate temperature and input pump power, single resonant mode operations are also observed.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.204-205
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• 2001

광굴절 매질은 높은 감도와 실시간 정보의 재기록 특성 때문에 동적 홀로그램과 그밖에 다른 광 신호 처리 소자로써 널리 연구되어지고 있다. 동적 홀로그램 매질에는 다중 양자 우물 구조(multiple quantum well structures), 네마틱 액정(nematic liquid crystals), 광굴절 결정(photorefractive crystal)과 폴리머 등의 다양한 종류의 형태가 있다. 특히 광굴절 고분자(photorefractive polymer)는 다양한 종류와 크기로 제작이 가능하며, 빠른 처리속도, 높은 이득계수(gain coefficient) 등으로 인하여 기존의 무기물 광굴절 결정(inorganic photorefractive crystal)을 대체할 수 있는 장점을 가지고 있다. (중략)

• Journal of the Optical Society of Korea
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• v.10 no.2
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• pp.86-90
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• 2006

The external feedback effect on the relative intensity noise (RIN) characteristics of blue InAlGaN laser diode has been analyzed taking into account the spontaneous emission noise and the injection current for the high frequency modulation. A Langevin diffusion model was exploited to characterize its relative intensity noise. The simulation parameters were quantitatively evaluated from the optical gain properties of the InAlGaN multiple quantum well active regions by using the multiband Hamiltonian for the strained wurtzite crystals. The extracted parameters were then applied to the rate equations taking into account the external feedback and the high frequency modulation current. The RIN characteristics were investigated to optimize the low frequency laser diode noise characteristics.

• Journal of the Optical Society of Korea
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• v.13 no.3
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• pp.386-391
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• 2009

PSPICE circuit parameters of the blue laser diodes grown on wurtzite AlGaInN multiple quantum well structures were extracted directly from the three level rate equations. The relevant optical gain parameters were separately calculated from the self-consistent multiband Hamiltonian. The resulting equivalent circuit model for a blue laser diode was schematically presented, and its modulation characteristics, including the pulse response and the frequency response, have been demonstrated by using a conventional PSPICE.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.20-32
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• 1997

An optimum parasitic inductance is observed for maximizing the modulation bandwidth of the multiple quantum well (MQW) electro-absorption optical modulator. For 1.1 pF device cpaacitance of the current MQW optical modulator, the optimum parasitic inductances for maximum bandwidth are calculated for different terminating resistors. In ase of 50.ohm. terminating resistor, the 3-dB modulation bandwidth can be increased 45% wider by using the optimum parasitic inductance than nothing parasitic inductance. This calculated optimum inductance can be practically implemented, since the parasitic inductance of bondwires can be accurately analyzed using the method of moments (MoM) and controlled by changing the length and shpae of bondwires.