• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.63-73
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• 2004

A simple analytical model has been presented for the study of the optical bistability using a $GaAs-Al_{0.32}Ga_{0.68}As$ multiple quantum well (MQW) p-i-n diode structure. The calculation of the optical absorption is based on a semi-emperical model which is accurately valid for a range of wells between 5 and 20 nm and the electric field F< 200kV/cm . The electric field dependent analytical expression for the responsivity is presented. An attempt has been made to derive the analytical relationship between the incident optical power ( $(P_{in})$ ) and the voltage V across the device when the diode is reverse biased by a power supply in series with a load resistor. The relationship between $P_{in}$ and $P_{out}$ (i.e. transmitted optical power) is also presented. Numerical results are presented for a typical case of well size $L_Z=10.5nm,\;barrier\;size\;L_B=9.5nm$ optical wave length l = 851.7nm and electric field F? 100kV/cm. It has been shown that for the values of $P_{in}$ within certain range, the device changes its state in such a way that corresponding to every value of $P_{in}$ , two stable states and one unstable state of V as well as of $P_{out}$ are obtained which shows the optically controlled bistable nature of the device.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.37-43
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• 2009

Temperature and injection current dependence of electroluminescence(EL) spectral intensity of the $In_xGa_{1-x}N$/GaN multi-quantum wells(MQW) have been studied over a wide temperature range and as a function of injection current level. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents shows a drastic difference. This unique EL efficiency variation pattern with temperature and current can be explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields. Increase of the indium content in $In_xGa_{1-x}N$/GaN multiple quantum wells gives rise to a redshift of 80 meV and 22 meV for green and blue MQW, respectively. It can be explained by carrier localization by potential fluctuation of multiple quantum well and MQW structures also shows a keen difference owing to the different indium content in InGaN/GaN MQW.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.91-97
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• 1998

The modulation performance of 10 Gbps electro-absorption InGaAsP/InGaAsP strain compensated MQW (Multiple Quantum Well) modulator module depends on the modulator as well as the package parasitics. The high frequency package parasitics resulting from various structural discontinuities, limit the modulation bandwidth and increase the chirp-parameter. Therefore, we propose the double bondwires embedded in dielectric materials to minimize the bondwire parasitics. Using the proposed structure with 50 $\Omega$ terminating resistor, the modulation bandwidth is greatly increased by 125 % than the bare chip and the chirp-parameter is also reduced. This technique can be used in optimizing the package of high speed external modulators.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.1-5
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• 2018

In this study, the effects of indium (In) doping in InGaN/GaN multi quantum well (MQW) on photoelectrochemical (PEC) properties were investigated. Each quantum well (QW) layer with controlled In content were grown on sapphire substrate. Before growth of MQW, GaN growth consisted of various stages in the following order: buffer GaN growth, undoped GaN growth, and Si-doped n-type GaN growth. Absorbance of InGaN/GaN MQW having different In composition was higher than that of the InGaN/GaN MQW having a constant In composition. It indicates that InGaN layer having different In composition absorbs light having a broad spectrum energy. These results are in agreement with those in photoluminescence (PL). After evaluation of PEC properties, it demonstrated that InGaN/GaN MQW having different In composition was improved InGaN/GaN MQW having constant In composition in PEC water splitting ability.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.23-30
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• 2000

The performance of two types of surface reflecting all-optical switches with InGaAs/InAlAs multiple quantum wells are investigated. The absorption spectra and the refractive index changes of the quantum well are calculated for various pump and probe beam intensities and device conditions. From theses results, on ON/OFF ratio and switching speed of the two switches are compared. It is shown that the switch using DBR has higher ON/OFF ratio and higher switching speed than the switch without DBR.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.93.4-93
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• 1998

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.11
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• pp.120-127
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• 1996

In the WKB analysis, we propose the new forms of the trial eigenfunctions which not only converge at the turning points but also approximate to the conventional WKB solutions away from the turning points. The eigenvalue equation of multiple waveguides with graded index profile are derived by using the proposed WKB analysis and the transfer matrix method. The drived equation sare represented in the recursive form. The results of the eigenvalue equation sare comapred with those of the FDM, one of the well-known computational methods, for a three-waveguide coupler.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1378-1380
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• 2005

The efficiency and the optical properties of the yellow organic light-emitting devices (OLEDs) were significantly affected by the existence of the multiple quantum well (MQW) structures consisting of N, N'- bis-(1-naphthyl)-N, N'-diphenyl-1,1-biphenyl-4,4'- diamine(NPB)/5,6,11,12 - tetraphenylnaphthacene (rubrene). The maximum efficiency and the luminance of OLEDs with 3-periods of the NPB/rubrene MQWs at 41.6 $mA/cm^2$ were 3.66 cd/A and 1524 $cd/m^2$, respectively, and their Commission Internationale de l'Eclairage chromaticity coordinates were (0.34, 0.55), which indicates a yellow color. These results indicate that the efficiencies of the OLEDs by using MQW emitting layers can be improved.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.219-219
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• 2013

The effect of an electron blocking layer (EBL) on V-I curves in GaN/InGaN multiple quantum well is investigated. For the first time, we found that curves were intersected at 3.012 V and analyzed the reason for intersection. The forward voltage in LEDs with an p-AlGaN EBL is larger than without p-AlGaN EBL at low injection current because the Mg doping efficiency for p-GaN layer was higher than that of p-AlGaN layer. However, the forward voltage in LEDs with an p-AlGaN EBL is smaller than without p-AlGaN EBL at high injection current because the carriers overflow from the active layer when injection current increases in LEDs without p-AlGaN EBL and in case of LED with p-AlGaN EBL, the carriers are blocked by EBL.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.193-193
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• 2009