• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.210-216
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• 1997

The th ermal and optical properties of multicomponent oxide glass optical fiber by adding heavy metal oxide Ga$_{2}$O$_{3}$(0-20wt%) were investigated. The fiber samples were made by the method of rod in tube. The optical loss of fiber was measured in 0.3-1.8.mu.m wavelength region. As Ga$_{2}$O$_{3}$ increased up to 20wt%, the transition and softening temperature of bulk glass were increased from 495.deg. C to 579.deg. C and from 548.deg. C to 641.deg. C, respectively. Whereas the thermal expansion coefficient was decreased from 102 to 79.1x10$^{-7}$ /.deg. C. The refractive index was increased from 1.621 to 1.665, and IR cut-off wavelength was enlarged from 4.64.mu.m to 6.1.mu.m. The optical loss of fiber was remarkably decreased in 1.146.mu.m-1.8.mu.m wavelength region.

• 방사성폐기물학회지
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• 제19권3호
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• pp.353-366
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• 2021

The solubilities of different multicomponent lanthanide oxide (Ln₂O₃) solid solutions including binary (Ln₁ and Ln₂ = La, Nd, Eu, or Tm), ternary (Ln₁, Ln₂, and Ln₃ = La, Nd, Eu, or Tm), and higher systems (Ln = La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu) were studied after aging for four weeks at 60℃. Our recent study revealed that the phase transformations in binary ((La, Nd) and (La, Eu)) and ternary (La, Nd, Eu) systems are responsible for the formation of (La, Nd)(OH)₃, (La, Eu)(OH)₃, and (La, Nd, Eu)(OH)₃ solid solutions, respectively. The variations in the mole fractions of La³⁺, Nd³⁺, and Eu³⁺ in the sample solutions of these hydroxide solid solutions indicated that a thermodynamic equilibrium might account for the apparent La, Nd, and Eu solubilities. Conversely, the binary and ternary systems containing Tm₂O₃ as the heavy lanthanide oxide retained the oxide-based solid solutions, and their solubility behaviors were dominated by their congruent dissolutions. In the higher multicomponent system, the X-ray diffraction patterns of the solid phases, before and after contact with the aqueous phase indicated the formation of a stable oxide solid solution and their solubility behavior was explained by its congruent dissolution.

• 한국분말재료학회지
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• 제26권5호
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• pp.375-382
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• 2019

Homogeneous multicomponent indium gallium zinc oxide (IGZO) ceramics for transparent electrode targets are prepared from the oxides and nitrates as the source materials, and their properties are characterized. The selected compositions were $In_2O_3:Ga_2O_3:ZnO$ = 1:1:2, 1:1:6, and 1:1:12 in mole ratio based on oxide. As revealed by X-ray diffraction analysis, calcination of the selected oxide or nitrides at $1200^{\circ}C$ results in the formation of $InGaZnO_4$, $InGaZn_3O_6$, and $InGaZn_5O_8$ phases. The 1:1:2, 1:1:6, and 1:1:12 oxide samples pressed in the form of discs exhibit relative densities of 96.9, 93.2, and 84.1%, respectively, after sintering at $1450^{\circ}C$ for 12 h. The $InGaZn_3O_6$ ceramics prepared from the oxide or nitrate batches comprise large grains and exhibit homogeneous elemental distribution. Under optimized conditions, IGZO multicomponent ceramics with controlled phases, high densities, and homogeneous microstructures (grain and elemental distribution) are obtained.

• 한국세라믹학회지
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• 제14권3호
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• pp.163-168
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• 1977

As a wet chemical drying process "hot petroleum drying method" was applied and developed for preparing uniformly fine oxide powder with high purity and sinterreactivity. Using this method solution of sulfates was dried in hot petroleum bath (~17$0^{\circ}C$) to sulfate powder from which corresponding mullite doped by Fe3+ ion was formed. Particle size, shape, decomposition by heat, and phase identification of sulfate andoxide powders determined by DTA, TGA, X-ray diffraction, analysis and electron microscopy: sulfate powder prepared by this drying method is an intimate mixture of the amorphous form of uniformly and finely distributed spherical particles (0.05-0.1$\mu$). Mullitization with the sulfate powder occurs at 110$0^{\circ}C$ in air. The morphology of mullite particle made by firing the sulfate powder at 135$0^{\circ}C$ in oxygen atmosphere is granular of 0.1-0.3$\mu$ in size. This drying process proved to be a very effective method for preparing fine, homogeneous, and highly sinterreactive multicomponent oxide powder without conventional ceramic process of mixing, milling, and granulating. This process can be also applied for preparing electronic ceramic materials which are requisite for high purity and homogeneity.mogeneity.

• The Korean Journal of Ceramics
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• 제6권1호
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• pp.58-63
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• 2000

The preparation of Y-doped $SrZrO_3$powder by ultrasonic spray pyrolysis was investigated as a representative system, in order to produce fine, single phase multicomponent oxide powders. A precursor solution containing metal nitrates, citric acid and ethylene glycol was atomized glycol was atomized with an ultrasonic spray nozzle. Gel particles formed by organic functional groups were pyrolyzed and subsequently calcined at $800^{\circ}C$ to obtain well-crystallized, single perovskite phase. Most of large particles exhibited macroscopic pores and weak agglomeration between primary particles. However, strong agglomeration was observed in the surfaces of large particles. The effect of the microstructures of these particles on size reduction to submicron particles was described.

• 한국산학기술학회논문지
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• 제3권2호
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• pp.89-93
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• 2002

PbO 함유 다성분계유리 및 파이버를 제조하였으며, PbO함유 유리는 이중도가니법(double crucible methodo에 의한 높은 개구수를 갖는(high-numerical aperture : N.A.) 광파이버(optical fiber) 제조에 적합하였다. 본 실험에 있어서는 SiO₂, PbO를 주성분으로 하고 K₂O, Na₂O, B₂O₃, A1₂O₃등의 산화물을 적량 배합하였으며, 또한 double crucible method에 의해 제조된 파이버의 광학적, 기계적 및 구조적 특성을 관찰하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.605-608
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• 2006

The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

• Journal of Information Display
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• 제11권4호
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• pp.165-168
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• 2010

A solution-processed multicomponent oxide, yttrium hafnium zinc oxide (YHZO), was synthesized and deposited as a gate insulator. The YHZO film annealed at $600^{\circ}C$ contained an amorphous phase based on the results of thermogravimetry, differential thermal analysis, and X-ray diffraction. The electrical characteristics of the YHZO film were analyzed by measuring the leakage current. The high dielectric constant (16.4) and high breakdown voltage (71.6 V) of the YHZO films resulted from the characteristics of $HfO_2$ and $Y_2O_3$, respectively. To examine if YHZO can be applied to thin-film transistors (TFTs), indium gallium zinc oxide TFTs with a YHZO gate insulator were also fabricated. The desirable characteristics of the YHZO films when used as a gate insulator show that the limitations of the general binary-oxide-based materials and of the conventional vacuum processes can be overcome.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• 한국광물학회지
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• 제29권3호
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• pp.155-165
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• 2016

붕소가 포함된 다성분계 규산염 용융체의 원자 구조를 규명하는 것은 화산의 분화 양상을 포함한 다양한 지구화학적 과정의 원자 단위 기작을 밝히는데 중요하다. 붕소를 포함한 소듐 알루미노규산염 용융체의 붕소 및 알루미늄 주위의 원자 환경에 관한 자세한 정보는 수용액과 핵폐기물 유리(nuclear waste glasses)의 반응도(reactivity)에 대한 미시적인 설명을 제공한다. 본 연구에서는 붕소가 포함된 비정질 물질의 원자 구조 규명에 가장 적합한 고상 핵자기 공명 분광분석(solid-state nuclear magnetic resonance, solid-state NMR)을 이용하여 붕소의 함량이 비정질 소듐 보레이트($Na_2O-B_2O_3$)와 붕소를 포함한 다성분계 규산염 용융체[말린코아이트(malinkoite, $NaBSiO_4$)와 네펠린(nepheline, $NaAlSiO_4$)의 유사 이원계]의 원자 구조에 미치는 영향을 규명하였다. 비정질 소듐 보레이트의 $^{11}B$ MAS NMR 스펙트럼을 통해 붕소의 함량이 증가함에 따라 배위수가 3인 붕소($^{[3]}B$)가 증가한다는 것이 확인되었다. 비정질 말린코아이트와 네펠린의 유사 이원계의 $^{11}B$ MAS NMR 스펙트럼을 통해 $X_{Ma}$ [$=NaBSiO_4/(NaBSiO_4+NaAlSiO_4)$]가 증가함에 따라 배위수가 4인 붕소($^{[4]}B$)는 증가하는 반면 $^{[3]}B$는 감소하는 것이 관찰되었다. 다성분계 용융체의 $^{27}Al$ MAS NMR 실험 결과, 모든 조성의 용융체에서 배위수가 4인 알루미늄($^{[4]}Al$) 피크가 지배적으로 나타났다. 또한 네펠린 용융체에 붕소가 첨가되었을때 $^{[4]}Al$ 피크의 폭이 크게 감소하였고, 이는 붕소의 첨가가 네펠린 용융체 내의 알루미늄 주위의 구조적 위상학적 무질서도를 감소시킨다는 것을 지시한다. 붕소를 포함한 이원계 및 다성분계 비정질 물질의 $^{11}B$ MAS NMR 스펙트럼으로부터 시뮬레이션을 하여 붕소의 함량에 따른 붕소 원자 환경의 상대적인 존재비를 정량적으로 분석하였고, 이 결과는 붕소가 포함된 비정질 물질의 거시적 성질 변화에 대한 미시적 기작의 근원을 제시할 가능성을 보여준다.