• Journal of Korean Institute of Industrial Engineers
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• v.36 no.3
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• pp.154-163
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• 2010

Process monitoring of output variables affecting final performance have been mainly executed in semiconductor manufacturing process. However, even earlier detection of causes of output variation cannot completely prevent yield loss because a number of wafers after detecting them must be re-processed or cast away. Semiconductor manufacturers have put more attention toward monitoring process inputs to prevent yield loss by early detecting change-point of the process. In the paper, we propose the method to efficiently monitor functional input variables in multi-phase semiconductor manufacturing process. Measured input variables in the multi-phase process tend to be of functional structured form. After data pre-processing for these functional input data, change-point analysis is practiced to the pre-processed data set. If process variation occurs, key variables affecting process variation are selected using contribution plot for monitoring efficiency. To evaluate the propriety of proposed monitoring method, we used real data set in semiconductor manufacturing process. The experiment shows that the proposed method has better performance than previous output monitoring method in terms of fault detection and process monitoring.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.143-146
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• 2016

A new area-efficient multi-phase clock frequency multiplier is presented. The proposed fractional-ratio frequency multiplying DLL (FFMDLL) is implemented in a 65 nm CMOS process and occupies an active area of just $0.01mm^2$. The proposed FFMDLL provides 8-phase output clocks and achieves a frequency range of 0.6-1.0 GHz with programmable multiplication ratios of N/M, where N = 4, 5, 8, 10 and M = 1, 2, 3. It achieves an effective peak-to-peak jitter of 5 ps and dissipates 3.4 mW from a 1.0 V supply at 1 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.16-21
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• 2006

A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.387-394
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• 2016

This paper presents a fully digital delay locked loop (DLL) that can acquire lock in four clock cycles with a resolution of a 1/4 NAND-delay. The proposed DLL with a multi-dither-free phase detector acquires the initial lock in four clock cycles with 1/2 NAND-delay. Then, it utilizes a multi-dither-free phase detector, a region accumulator, and phase blenders, to improve the resolution to a 1/4 NAND-delay. The region accumulator which continuously steers the control registers and the phase blender, adaptively controls the tracking bandwidth depending on the amount of jitter, and effectively suppresses the dithering jitter. Fabricated in a 65 nm CMOS process, the proposed DLL occupies $0.0432mm^2$, and consumes 3.7 mW from a 1.2-V supply at 2 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.352-358
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• 2016

A 5-phase phase-locked loop (PLL) for USB2.0 applications was implemented by using an all-synthesis technique. The length of the time-to-digital converter for the fine phase detector was halved by the operation of a coarse phase detector that uses 5-phase clocks. The maximum time difference between the rising edges of two adjacent-phase clocks was 6 ps at 480 MHz. The PLL chip in a 65-nm process occupies $0.038mm^2$, consumes 4.8 mW at 1.2 V. The measured rms and peak-to-peak output jitters are 8.6 ps and 45 ps, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.52-58
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• 2006

Single-electron transistor (SET)-based logic cells and SET/FET hybrid integrated circuits have been fabricated on SOI chips. The input-output voltage transfer characteristic of the SET-based complementary logic cell shows an inverting behavior where the output voltage gain is estimated to be about 1.2 at 4.2K. The SET/FET output driver, consisting of one SET and three FETs, yields a high voltage gain of 13 and power amplification with a wide-range output window for driving next circuit. Finally, the SET/FET literal gate for a multi-valued logic cell, comprising of an SET, an FET and a constant-current load, displays a periodic voltage output of high/low level multiple switching with a swing as high as 200mV. The multiple switching functionality of all the fabricated logic circuits could be enhanced by utilizing a side gate incorporated to each SET component to enable the phase control of Coulomb oscillations, which is one of the unique characteristics of the SET-based logic circuits.

• Journal of the Korean Society for Nondestructive Testing
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• v.29 no.6
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• pp.550-556
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• 2009

In an application of a time reversal(TR) focusing of array transducer on a defect inside the test material, we employ a new time delay focusing technique based the TR process. In order to realize this idea, a multi-channel ultrasonic system is constructed capable of applying necessary time delays to each channel. The TR-based focusing procedure first measures the backscattered signals after firing one of the array elements. A phase slope method is then used to determine the time-of-flights of the backscattered signals received by all elements of the array. These time delays are used to adjust the time of excitation of the elements for transmission focusing on the defect. In addition to the TR focusing, the classical phased array focusing is also considered for comparison. Experimental results show that the TR-based time delay focusing produces much stronger backscattered signals than the phased array focusing, demonstrating the enhanced capability of the TR focusing.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.4
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• pp.121-127
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• 2024

In this paper, FEM (Front-End Module) MMIC, a key component for the application of the satellite communication terminal transmission and reception module of the multi-phase array structure, was designed and verified as a single chip by designing the Power Amplifier (PA) and the Low Noise Amplifier (LNA). It was manufactured using the GaAs PP10 (100nm) process, a compound semiconductor process from Win-semiconductors, and the operating frequency band of 7.2-10.5GHz operation, output 1W, and noise index of 1.5dB or less were secured using a dedicated test board. The developed FEM MMIC can be used as a single chip, and the components PA and LNA can also be used as each device. The developed device will be used in various applications of Minsu/Gunsu using the X band and the localization of overseas parts.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.19-24
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• 2007

With recent advancement of high-speed, multi-gigabit data transmission capabilities, serial links have been more widely adopted in industry than parallel links. Since the parallel link design forces its transmitter to transmit both the data and the clock to the receiver at the same time, it leads to hardware's intricacy during high-speed data transmission, large power consumption, and high cost. Meanwhile, the serial links allows the transmitter to transmit data only with no synchronized clock information. For the purpose, clock and data recovery circuit becomes a very crucial key block. In this paper, a 5.4Gbps half-rate bang-bang CDR is designed for the applications of high-speed graphic DRAM interface. The CDR consists of a half-rate bang-bang phase detector, a current-mirror charge-pump, a 2nd-order loop filter, and a 4-stage differential ring-type VCO. The PD automatically retimes and demultiplexes the data, generating two 2.7Gb/s sequences. The proposed circuit is realized in 66㎚ CMOS process. With input pseudo-random bit sequences (PRBS) of $2^{13}-1$, the post-layout simulations show 10psRMS clock jitter and $40ps_{p-p}$ retimed data jitter characteristics, and also the power dissipation of 80mW from a single 1.8V supply.