• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2008.11a
• /
• pp.55-55
• /
• 2008

반사방지막은 태양전지 셀 제작에 적용되고 있으며, 효율을 향상시키기 위하여 $SiO_2$, $TiO_2$를 이용한 Multi-layer 반사방지막을 적용하였다. Multi-layer의 효과가 기존의 SiN 반사방지막에 비하여 광수집의 향상에 영향을 주었음을 알 수 있었다.

• Journal of Integrative Natural Science
• /
• v.5 no.1
• /
• pp.27-31
• /
• 2012

Relationship between reflection resonance and applied current density in Bragg photonic crystal has been investigated. Multiple bit encodes of distributed Bragg reflector features have been prepared by electrochemical etching of crystalline silicon by using various square wave current densities. Optical characterization of multi-encoding of distributed Bragg reflectors on porous silicon was achieved by Ocean optics 2000 spectrometer for the search of possible applications of multiple bit encoding of distributed Bragg reflectors such as multiplexed assays and chemical sensors. The morphology and cross-sectional structure of multi-encoded distributed Bragg reflectors was investigated by field emission scanning electron micrograph.

• Coupled systems mechanics
• /
• v.5 no.4
• /
• pp.341-353
• /
• 2016

Manufactures of multi-crystalline silicon ingots by means of the directional solidification system (DSS) is important to the solar photovoltaic (PV) cell industry. The quality of the ingots, including the grain size and morphology, is highly related to the shape of the crystal-melt interface during the crystal growth process. We performed numerical simulations to analyze the thermo-fluid field and the shape of the crystal-melt interface both for steady conditions and transient processes. The steady simulations are first validated and then applied to improve the hot zone design in the furnace. The numerical results reveal that, an additional guiding plate weakens the strength of vortex and improves the desired profile of the crystal-melt interface. Based on the steady solutions at an early stage, detailed transient processes of crystal growth can be simulated. Accuracy of the results is supported by comparing the evolutions of crystal heights with the experimental measurements. The excellent agreements demonstrate the applicability of the present numerical methods in simulating a practical and complex system of directional solidification system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.5
• /
• pp.301-306
• /
• 2017

Wire electrical discharge machining (WEDM) process was evaluated to slice Silicon (Si) for various applications. Specifically, various Si workpieces with various resistances, such as single and multi crystalline Si bricks and wafers were used. As conventional slicing processes, such as slurry-on or diamond-on wire slicing, are based on mechanical abrasions between Si and abrasive, there is a limitation to decrease the wafer thickness as well as kerf-loss. Especially, when the wafer thickness is less than $150{\mu}m$, wafer breakage increases dramatically during the slicing process. Single crystalline P-type Si bricks and wafers were successively sliced with considerable slicing speed regardless of its growth direction. Also, typical defects, such as microcracks, craters, microholes, and debris, were introduced when Si was sliced by electrical discharge. Also, it was found that defect type is also dependent on resistance of Si. Consequently, this study confirmed the feasibility of slicing single crystalline Si by WEDM.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.15 no.2
• /
• pp.45-50
• /
• 2005

During oxidation process, several type of defects are formed on the surface of the silicon crystal which was damaged mechanically before oxidation. As the size of abrasive particle increases multiple dislocation loops are produced favorably over oxidation-induced stacking faults, which are dominantly produced when ground with finer abrasive particle. These defects are not related with the crystal growth process like Czochralski or directional solidification. During directional solidification process, twins and stacking faults are the two major defects observed in the bulk of the silicon crystal. On the other hand, slip dislocations produced by the thermal stress are not observed. Thus, not only in single crystalline silicon crystal but also in multi-crystalline silicon, extrinsic gettering process with programmed production of surface defects might be highly applicable to silicon wafers for purification.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.143-146
• /
• 2009

One of the most important issues of crystalline silicon solar cell is minimizing reflectance at the surface. Laser texturing is an isotropic process that will sculpt the surface of a silicon wafer, regardless of its crystallographic orientation. We investigated surface texturing process using Nd-YAG laser ($\lambda$=1064 nm) on multi-crystalline silicon wafer. Removal of slag formed after the laser process was performed using acid solution (HF : $HNO_3$ : $CH_3COOH$ : DI water). The reflectance and carrier lifetime of the samples were measured and analyzed using UV-Vis spectrophotometer and carrier lifetime tester. It was found that the minimum reflectance of the samples was 16.39% and maximum carrier life time was $21.8\;{\mu}s$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.146-149
• /
• 2004

Porous silicon(PS) as an excellent light diffuser can be used as an antireflection layer without other antireflection coating(ARC) materials. PS layers were obtained by electrochemical etching(ECE) anodization of silicon wafers in hydrofluoric acid/ethanol/de-ionized(DI) water solution($HF/EtOH/H_2O$). This technique is based on the selective removal of Si atoms from the sample surface forming a layer of PS with adjustable optical, electrical, and mechanical properties. A PS layer with optimal ARC characteristics was obtained in charge density (Q) of 5.2 $C/cm^2$. The weighted reflectance is reduced from 33 % to 4 % in the wavelength between 400 and 1000 nm. The weighted reflectance with optimized PS layers is much less than that obtained with a commercial SiNx ARC on a potassium hydroxide(KOH) pre-textured multi-crystalline silicon(mc-Si) surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.243-243
• /
• 2010

This paper two different etching, HF : HNO3 :DI and RIE were used for etching in multi-crystalline Silicon(Mc-Si) solar cell fabrication. The wafers etched in RIE texture showed low reflectance compared to the wafers etched in Acid soultion after SiNx deposition. In light current-voltage results, the cells etched in RIE texture exhibited higher short circuit current and open circuit voltage than those of the cells etched in acid solution. We have obtained 15.1% conversion efficiency in large area($156cm^2$) Multi-Si solar cells etched in RIE texture.

• Journal of the Korean Vacuum Society
• /
• v.19 no.4
• /
• pp.314-318
• /
• 2010

We fabricated a plasma texturing for multi-crystalline silicon cells using reactive ion etching (RIE). Multi-crystalline Si cells have not benefited from the cost-effective wet-chemical texturing processes that reduce front surface reflectance on single-crystal wafers. Elimination of plasma damage has been achieved while keeping front reflectance to extremely low levels. We will discuss reflectance, quantum efficiency and conversion efficiency for multi-crystalline Si solar cell by each RIE process conditions.

• Applied Chemistry for Engineering
• /
• v.24 no.1
• /
• pp.31-37
• /
• 2013

Lowering surface reflectance of Si wafers by texturization is one of the most important processes for improving the efficiency of Si solar cells. This paper presents the results on the effect of texturing using acidic solution mixtures containing the catalytic agents to moderate etching rates on the surface morphology of mc-Si wafer as well as on the performance parameters of solar cell. It was found that the treatment of contaminated crystalline silicon wafer with $HNO_3-H_2O_2-H_2O$ solution before the texturing helps the removal of organic contaminants due to its oxidizing properties and thereby allows the formation of nucleation centers for texturing. This treatment combined with the use of a catalytic agent such as phosphoric acid improved the effects of the texturing effects. This reduced the reflectance of the surface, thereby increased the short circuit current and the conversion efficiency of the solar cell. Employing this technique, we were able to fabricate mc-Si solar cell of 16.4% conversion efficiency with anti-reflective (AR) coating of silicon nitride film using plasma-enhanced chemical vapor deposition (PECVD) and Si wafers can be texturized in a short time.