• The Journal of Korean Physical Therapy
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• v.27 no.3
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• pp.135-139
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• 2015

Purpose: The aim of this study was to compare EEG topographical maps in patients with chronic stroke after action observation physical training. Methods: Ten subjects were recruited from a medical hospital. Participants observed the action of transferring a small block from one box to another for 6 sessions of 1 minute each, and then performed the observed action for 3 minutes, 6 times. An EEG-based brain mapping system with 32 scalp sites was used to determine cortical reorganization in the regions of interest (ROIs) during observation of movement. The EEG-based brain mapping was comparison in within-group before and after training. ROIs included the primary sensorimotor cortex, premotor cortex, superior parietal lobule, inferior parietal lobule, superior temporal lobe, and visual cortex. EEG data were analyzed with an average log ratio in order to control the variability of the absolute mu power. The mu power log ratio was in within-group comparison with paired t-tests. Results: Participants showed activation prior to the intervention in all of the cerebral cortex, whereas the inferior frontal gyrus, superior frontal gyrus, precentral gyrus, and inferior parietal cortex were selectively activated after the training. There were no differences in mu power between each session. Conclusion: These findings suggest that action observation physical training contributes to attaining brain reorganization and improving brain functionality, as part of rehabilitation and intervention programs.

• Publications of The Korean Astronomical Society
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• v.32 no.1
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• pp.197-199
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• 2017

Using the InfraRed Camera (IRC) on board the infrared astronomical satellite AKARI we study the ${3.3{\mu}m}$ polycyclic aromatic hydrocarbon (PAH) feature and its connection to active galactic nucleus (AGN) properties for a sample of 54 hard X-ray selected bright AGN, including both Seyfert 1 and Seyfert 2 type objects. The sample is selected from the 9-month Swift/BAT survey in the 14-195 keV band and all of the sources have known neutral hydrogen column densities ($N_H$). The ${3.3{\mu}m}$ PAH luminosity ($L_{3.3{\mu}m}$) is used as a proxy for star-formation (SF) activity and hard X-ray luminosity ($L_{14-195keV}$) as an indicator of the AGN power. We explore for possible difference of SF activity between type 1 (un-absorbed) and type 2 (absorbed) AGN. We use several statistical analyses taking the upper-limits of the PAH lines into account utilizing survival analysis methods. The results of our log($L_{14-195keV}$) versus log($L_{3.3{\mu}m}$) regression shows a positive correlation and the slope for the type 1/unobscured AGN is steeper than that of type 2/obscured AGN at a $3{\sigma}$ level. Also our analysis shows that the circum-nuclear SF is more enhanced in type 2/absorbed AGN than type 1/un-absorbed AGN for low $L_{14-195keV}$ luminosity/low Eddington ratio AGN, while there is no significant dependence of SF activity on the AGN type in the high $L_{14-195keV}$ luminosities/Eddington ratios.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.