• 한국우주과학회:학술대회논문집(한국우주과학회보)
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• 한국우주과학회 1994년도 한국우주과학회보 제3권1호
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• pp.16-16
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• 1994

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.39.3-39
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• 1998

• 통합자연과학논문집
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• 제1권1호
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• pp.54-57
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• 2008

This report examines the variation on structural properties of $SnO_2$ thin films. TEM studies shows some of the interfaces to be atomically faceted. Secondary X-ray photoelectron Spectroscopy Analysis(XPS) depth profiles show that films have a uniform composition along the depth.

• Journal of Plant Biotechnology
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• 제45권1호
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• pp.36-44
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• 2018

In this study, we evaluated the effect of different concentrations of chitosan and chitosan nanoparticles as edible coating in extending shelf life and maintaining the quality of banana fruits (Musa acuminata AAA group). The fruit treated with 1.15% chitosan, 1.25% chitosan and chitosan nanoparticles then store at ambient temperature ($25{\pm}1^{\circ}C$). The shelf-life of banana, starch content, weight loss, pulp to peel ratio, total soluble solid, surface morpholgy of banana peel and sensory evaluation were analysed. Molecular analysis on the effect of chitosan was also conducted. Results showed that the application of chitosan nanoparticles and chitosan could extend shelf-life and maintain quality of banana fruits.

• 한국분말재료학회지
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• 제7권1호
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• pp.19-26
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• 2000

Al-Cr-Zr metal powders were prepared by cryo-milling(-75$^{\circ}C$),ambi-milling(25$^{\circ}C$) and warm-milling(200$^{\circ}C$) to investige the effect of milling temperature. The morphogical changes and microstructural evolution of Al-6wt.%Cr-3wt.%Zr metal powder ball milling were investigated by SEM, OM and XRD. The cryo-milling at -75$^{\circ}C$ caused the more refinement of powder particle size than ambi-milling and warm-milling. The partic morpholgy of Al-Cr-Zr metal powders changed changes into spheroidal particles at 25$^{\circ}C$and spherical particles at 200$^{\circ}C$The spherical particles were formed by agglomertion and contiuous wrapping of the spheroidal particles. The calculated Al crystallite size in Al-Cr-Zr metal powders by the Scherer equation were refined rapidly for short milling time -75$^{\circ}C$compared with milling at 25$^{\circ}C$ and 200$^{\circ}C$.

• 한국표면공학회지
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• 제21권2호
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• pp.39-46
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• 1988

Corrosion behavior of 5-26wt% Ni-Zn electrodeposited alloys was investigated by means of dipping electrochmical polarization measurement and galvanic coupling test. The weight loss and anodic polarization curve of coatings were measured by means of dipping and polarization measurement respectively. The galvanic protection effect of alloy coatings was measured by galvanic coupling test and the surface morpholgy of coatings was observed after corrosion testing. Our findings support thous of previous investigations showing that ${\gamma}$single phase coatings, while galvanic pprotection effect of dual phase coatings improved in comparison with ${\gamma}$single phase coating. The formation of colony in coating of ${\gamma}$and η+${\gamma}$ dual phsae caused the localized corrsion and increased the corrosion rate of the Ni-Zn coating.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.809-814
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• 1998

In this study, the metastable state diamond thin films have been deposited on Si substrates from methand-hydrogen and oxygen mixture usin gMicrowave Plasma Enhanced Chemical Vapor Deposition (MWPCVD) method. effects experimental parameters MWPCVD including methan concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)∼5%(5sccm). oxygen concentration of 0∼80%(2.4sccm). operating pressure of 30Torr∼ 70Torr, deposition time of 1∼32hr. SEM, WRD, and Raman spectroscopy were employed to analyse the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non=diamond phases respectively.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.99.2-99.2
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafer and surface morphology. It is observed that passivation quality of a-Si:H thin-films on c-Si wafer highly depends on wafer surface conditions. The MCLT(Minority carrier life time) of wafer incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with cleaning process and surface morpholgy. By applying improved cleaning processes and surface morphology we can obtain the MCLT of $200{\mu}sec$ after H-termination and above 1.5msec after i a-Si:H thin film deposition, which has implied open circuit voltage of 0.720V.

• 디지털콘텐츠학회 논문지
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• 제14권4호
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• pp.589-596
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• 2013

사회의 범죄율 증가와 더불어 지능형 보안 시스템강화에 대한 관심이 높아지고 있다. 이에 본 연구에서는 CCTV에 획득되는 영상으로부터 객체의 이상 행동을 감지하는 시스템을 제안한다. 배경영상과의 차연산 및 모폴로지를 통해 객체를 검출하고 객체의 특징 정보를 이용해 각각의 객체를 인식하여 추적하여 이를 통해 이상행동을 탐지한다. 객체가 영상 내에서 일정시간 이상을 배회했을 때 이를 이상행동으로 판단하여 사전에 관제센터에 알려 미연에 방지할 수 있도록 한다. 특히 본 연구는 이상 행동 중 객체의 배회행위를 감지하는 것을 목표로 하며 영상 내에서 사라진 객체가 다시 영상 내로 들어 왔을 때의 이전 객체와의 동일여부를 판단할 수 있도록 하였다.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.130-137
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• 1994

Indium, element of group III, was refined by using zone refining for high purity refinement. We have found the impurities of T1, Zn, Fe, Cd, Pb, Ni, Cu, Sn in the refined indium with ICP-AES, so that 3.9 weight ppm of T1 was reduced to less than 1 ppm, 1.0 weight ppm of Zn was reduced to 0.7 ppm, 2.8 weight ppm of Cd was reduced to 2.5 ppm and 14.0 weight ppm of Sn was reduced to 6.7 ppm with 5 melten zone passes only. 3.9 weight ppm of T1 was reduced to less than 1 ppm, 1.0 weight ppm of Zn was reduced to 0.3 ppm, 2.8 weight ppm of Cd was reduced to less than 1.0 ppm and 14.0 weight ppm of Sn was reduced to 0.4 ppm after vacuum baking with 5 melten zone passes. The surface morpholgy of metal Indium thin film in each conditions showed that porosities were reduced in the front of sampled ingot after vacuum baking with 5 zone melten zone passes. The average electrical resistivity of Indium thin film was reduced from 1.4*10$^{-3}$ .ohm.-cm in Indium origin ingot to 7.9*10$^{-6}$ .ohm.-cm after zone refined with 5 melten zone passes.