• Bulletin of the Korean Space Science Society
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• 1994.04a
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• pp.16-16
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.39.3-39
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• 1998

• Journal of Integrative Natural Science
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• v.1 no.1
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• pp.54-57
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• 2008

This report examines the variation on structural properties of $SnO_2$ thin films. TEM studies shows some of the interfaces to be atomically faceted. Secondary X-ray photoelectron Spectroscopy Analysis(XPS) depth profiles show that films have a uniform composition along the depth.

• Journal of Plant Biotechnology
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• v.45 no.1
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• pp.36-44
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• 2018

In this study, we evaluated the effect of different concentrations of chitosan and chitosan nanoparticles as edible coating in extending shelf life and maintaining the quality of banana fruits (Musa acuminata AAA group). The fruit treated with 1.15% chitosan, 1.25% chitosan and chitosan nanoparticles then store at ambient temperature ($25{\pm}1^{\circ}C$). The shelf-life of banana, starch content, weight loss, pulp to peel ratio, total soluble solid, surface morpholgy of banana peel and sensory evaluation were analysed. Molecular analysis on the effect of chitosan was also conducted. Results showed that the application of chitosan nanoparticles and chitosan could extend shelf-life and maintain quality of banana fruits.

• Journal of Powder Materials
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• v.7 no.1
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• pp.19-26
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• 2000

Al-Cr-Zr metal powders were prepared by cryo-milling(-75$^{\circ}C$),ambi-milling(25$^{\circ}C$) and warm-milling(200$^{\circ}C$) to investige the effect of milling temperature. The morphogical changes and microstructural evolution of Al-6wt.%Cr-3wt.%Zr metal powder ball milling were investigated by SEM, OM and XRD. The cryo-milling at -75$^{\circ}C$ caused the more refinement of powder particle size than ambi-milling and warm-milling. The partic morpholgy of Al-Cr-Zr metal powders changed changes into spheroidal particles at 25$^{\circ}C$and spherical particles at 200$^{\circ}C$The spherical particles were formed by agglomertion and contiuous wrapping of the spheroidal particles. The calculated Al crystallite size in Al-Cr-Zr metal powders by the Scherer equation were refined rapidly for short milling time -75$^{\circ}C$compared with milling at 25$^{\circ}C$ and 200$^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.21 no.2
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• pp.39-46
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• 1988

Corrosion behavior of 5-26wt% Ni-Zn electrodeposited alloys was investigated by means of dipping electrochmical polarization measurement and galvanic coupling test. The weight loss and anodic polarization curve of coatings were measured by means of dipping and polarization measurement respectively. The galvanic protection effect of alloy coatings was measured by galvanic coupling test and the surface morpholgy of coatings was observed after corrosion testing. Our findings support thous of previous investigations showing that ${\gamma}$single phase coatings, while galvanic pprotection effect of dual phase coatings improved in comparison with ${\gamma}$single phase coating. The formation of colony in coating of ${\gamma}$and η+${\gamma}$ dual phsae caused the localized corrsion and increased the corrosion rate of the Ni-Zn coating.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.809-814
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• 1998

In this study, the metastable state diamond thin films have been deposited on Si substrates from methand-hydrogen and oxygen mixture usin gMicrowave Plasma Enhanced Chemical Vapor Deposition (MWPCVD) method. effects experimental parameters MWPCVD including methan concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)∼5%(5sccm). oxygen concentration of 0∼80%(2.4sccm). operating pressure of 30Torr∼ 70Torr, deposition time of 1∼32hr. SEM, WRD, and Raman spectroscopy were employed to analyse the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non=diamond phases respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.99.2-99.2
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafer and surface morphology. It is observed that passivation quality of a-Si:H thin-films on c-Si wafer highly depends on wafer surface conditions. The MCLT(Minority carrier life time) of wafer incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with cleaning process and surface morpholgy. By applying improved cleaning processes and surface morphology we can obtain the MCLT of $200{\mu}sec$ after H-termination and above 1.5msec after i a-Si:H thin film deposition, which has implied open circuit voltage of 0.720V.

• Journal of Digital Contents Society
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• v.14 no.4
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• pp.589-596
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• 2013

With the increase of social crime rate, the interest on the intelligent security system is also growing. This paper proposes a detection system of monitoring whether abnormal behavior is being carried in the images captured using CCTV. After detection of an object via subtraction from background image and morpholgy, this system extracts an abnormal behavior by each object's feature information and its trajectory. When an object is loitering for a while in CCTV images, this system considers the loitering as an abnormal behavior and sends the alarm signal to the control center to facilitate prevention in advance. Especially, this research aims at detecting a loitoring act among various abnormal behaviors and also extends to the detection whether an incoming object is identical to one of inactive objects out of image.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.130-137
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• 1994

Indium, element of group III, was refined by using zone refining for high purity refinement. We have found the impurities of T1, Zn, Fe, Cd, Pb, Ni, Cu, Sn in the refined indium with ICP-AES, so that 3.9 weight ppm of T1 was reduced to less than 1 ppm, 1.0 weight ppm of Zn was reduced to 0.7 ppm, 2.8 weight ppm of Cd was reduced to 2.5 ppm and 14.0 weight ppm of Sn was reduced to 6.7 ppm with 5 melten zone passes only. 3.9 weight ppm of T1 was reduced to less than 1 ppm, 1.0 weight ppm of Zn was reduced to 0.3 ppm, 2.8 weight ppm of Cd was reduced to less than 1.0 ppm and 14.0 weight ppm of Sn was reduced to 0.4 ppm after vacuum baking with 5 melten zone passes. The surface morpholgy of metal Indium thin film in each conditions showed that porosities were reduced in the front of sampled ingot after vacuum baking with 5 zone melten zone passes. The average electrical resistivity of Indium thin film was reduced from 1.4*10$^{-3}$ .ohm.-cm in Indium origin ingot to 7.9*10$^{-6}$ .ohm.-cm after zone refined with 5 melten zone passes.