• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.42-45
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• 2002

General wheel mark in mono-crystalline silicon wafer finding is able to be expected because it depends on radius ratio and angular velocity ratio of wafer and wheel. The pattern is predominantly determined by the contour of abrasive grits resulting from a relative motion. Although such a wheel mark is made uniform pattern if the process parameters are fixed, sub-surface defect is expected to be distributed non-uniformly because of characteristic of mono-crystalline silicon wafer that has diamond cubic crystal. Consequently it is considered that this phenomenon affects the following process. This paper focused on kinematic analysis of wafer grinding process and simulation program was developed to verify the effect of process variables on wheel mark. And finally, we were able to predict sub-surface defect distribution that considered characteristic of mono-crystalline silicon wafer

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1054-1056
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• 2002

High temperature Kermal diffusion from $POCl_3$ source usually used for conventional process through put of a cell manufacturing line and potentially reduce cell efficiency through bulk like time degradation. To fabricate high efficiency solar cells with minimal thermal processing, spin-on-doping(SOD) technique can be employed to emitter diffusion of a silicon solar cell. A technique is presented to emitter doping of a mono-crystalline solar cell using spin-on doping (SOD). Moreover it is shown that the sheet resistance variation with RTA temperature and time fer mono-crystalline and multi-crystalline silicon samples. This novel SOD technique was successfully used to produces 11.3% efficiency l04mm by 104mm size mono-crystalline silicon solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.419-419
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• 2016

High efficiency silicon solar cell requires the textured front surface to reduce reflectance and to improve the light trapping. In case of mono-crystalline silicon solar cell, wet etching with alkaline solution is widespread. However, the alkali texturing methods are ineffective in case of multi-crystalline silicon wafer due to grain boundary of random crystallographic orientation. The acid texturing method is generally used in multi-crystalline silicon wafer to reduce the surface reflectance. However the acid textured solar cell gives low short-circuit current due to high reflectivity while it improves the open-circuit voltage. To reduce the reflectivity of multi-crystalline silicon wafer, double texturing method with combination of acid and reactive ion etching is an attractive technical solution. In this paper, we have studied to optimize RIE experimental condition with change of RF power (100W, 150W, 200W, 250W, 300W). During experiment, the gas ratio of SF6 and O2 was fixed as 30:10.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.10
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• pp.26-33
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• 2004

Ultra precision grinding technology has been developed from the refinement of the abrasive, the development of high stiffness equipment and grinding skill. The conventional wafering process which consists of lapping, etching, 1 st, 2nd and 3rd polishing has been changed to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Furthermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focuses on the flatness of the ground wafer. Generally, the ground wafer has concave pronto because of the difference of wheel path density, grinding temperature and elastic deformation of the equipment. Wafer tilting is applied to avoid non-uniform material removal. Through the geometric analysis of wafer grinding process, the profile of the ground wafer is predicted by the development of profile simulator.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.98-101
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive. the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, 1st, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the flatness of the ground wafer. Generally, the ground wafer has concave profile because of the difference of wheel path density, grinding temperature and elastic deformation of the equiptment. Tilting mathod is applied to avoid such non-uniform material removes. So, in this paper, the geometric analysis on grinding process is carried out, and then, we can predict the profile of th ground wafer by using profile simulation.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.47.2-47.2
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• 2010

For reducing outer reflection in mono-crystalline silicon solar cell, wet texturing process has been adapted for long period of time. Nowadays mixed solution with potassium hydroxide and isopropyl alcohol is used in silicon surface texturing by most manufacturers. In the process of silicon texturing, etch rate is very critical for effective texturing. Several parameters influence the result of texturing. Most of all, temperature, process time and concentration of potassium hydroxide can be classified as important factors. In this paper, temperature, process time and concentration of potassium hydroxide were set as major parameters and 3-level test matrix was created by using robust design for the optimized condition. The process optimization in terms of lowest reflection and stable etch rate can be traced by using robust design method.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.245-248
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• 2011

Many researches have been carried out to improve light absorption in the crystalline silicon solar cell fabrication. The rear reflection is applied to increase the path length of light, resulting in the light absorption enhancement and thus the efficiency improvement mainly due to increase in short circuit current. In this paper, we manufactured the silicon solar cell using the mono crystalline silicon wafers with $156{\times}156mm^2$, 0.5~3.0 ${\Omega}{\cdot}cm$ of resistivity and p-type. After saw damage removal, the dielectric film ($SiN_x$)on the back surface was deposited, followed by surface texturing in the KOH solution. It resulted in single-side texturing wafer. Then the dielectric film was removed in the HF solution. The silicon wafers were doped with phosphorus by $POCl_3$ with the sheet resistance 50 ${\Omega}/{\Box}$ and then the silicon nitride was deposited on the front surface by the PECVD with 80nm thickness. The electrodes were formed by screen-printing with Ag and Al paste for front and back surface, respectively. The reflectance and transmittance for the single-sided and double-sided textured wafers were compared. The double-sided textured wafer showed higher reflectance and lower transmittance at the long wavelength region, compared to single-sided. The completed crystalline silicon solar cells with different back surface texture showed the conversion efficiency of 17.4% for the single sided and 17.3% for the double sided. The efficiency improvement with single-sided textured solar cell resulted from reflectance increase on back surface and light absorption enhancement.

• 한국태양에너지학회:학술대회논문집
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• 2011.04a
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• pp.105-110
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• 2011

The doping procedure in crystalline silicon solar cell fabrication usually contains oxygen injection during drive-in process and removal of phosphorous silicate glass(PSG). In this paper, we studied the effect of oxygen injection and PSG on conversion efficiency of solar cell. The mono crystalline silicon wafers with $156{\times}156mm^2$, $200{\mu}m$, $0.5-3.0{\Omega}{\cdot}cm$ and p-type were used. After etching $7{\mu}m$ of the surface to form the pyramidal structure, the P(phosphorous) was injected into silicon wafer using diffusion furnace to make the emitter layer. After then, the silicon nitride was deposited by the PECVD with 80 nm thickness and 2.1 refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-$880^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Solar cells with four different types were fabricated with/without oxygen injection and PSG removal. Solar cell that injected oxygen during the drive-in process and removed PSG after doping process showed the 17.9 % conversion efficiency which is best in this study. This solar cells showed $35.5mA/cm^2$ of the current density, 632 mV of the open circuit voltage and 79.5 % of the fill factor.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.12-17
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• 2019

In this study, the Ag nano-dots structure and silicon nitride film were applied to the textured wafer surface to improve the light trapping effect of mono-crystalline silicon solar cell. Ag nano-dots structure was formed by performing a heat treatment for 30 minutes at 650℃ after the deposition of 10nm Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The silicon nitride film was deposited by a Hot-wire chemical vapor deposition. The effect of light trapping was compared and analyzed through light reflectance measurements. Experimental results showed that the reflectivity increased by 0.5 ~ 1% under all nitride thickness conditions when Ag nano-dots structure was formed before nitride film deposition. In addition, when the Ag nano-dots structure is formed after deposition of the silicon nitride film, the reflectance is increased in the nitride film condition of 70 nm or more. When the HF treatment was performed for 60 seconds to improve the Ag nano-dot structure, the overall reflectance was improved, and the reflectance was 0.15% lower than that of the silicon nitride film-only sample at 90 nm silicon nitride film condition.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.662-666
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• 1989

Pure mono Silane(Purity: 99.99%) was used as a thin film source and [$SiH_4$ + $H_2$ (5%)] + [$PH_3$ + $H_2$(0.05%)] mixed dilute gas was used for p-n junction diode. The substrate was P-type silicon wafer (p=$3{\Omega}$ cm) with the direction (100). The crystalline qualities of deposited thin film were investigated by the X-ray diffraction, RHEED and TED patterns and the voltampere characteristics of p-n junction diode was identified by I-V curve.