• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.66-69
• /
• 2001

Effect of $N_2$ flow rate on properties of GaN thin films grown by plasma-enhanced molecular beam epitaxy(PEMBE) was discussed to optimize the quality of thin films. It was found that at low $N_2$ flow rate indicating high III/V flux ratio, the growth rate of GaN thin films was controlled by $N_2$ flux, and at high $N_2$ flow rate the growth rate was not controlled by $N_2$ flux any longer. It was also found that III/V flux ratio affected film quality. The film grown at higher $N_2$ flow rate showed low background carrier concentration, higher carrier mobility, and narrow FWHM in band-edge emission of low temperature PL. It is thought that the film in more Ga flux region was grown by 2-dimensional layer-by-layer growth mode, and the film in more nitrogen region was grown by 3-D island growth mode. All samples exhibited a good crystallinity.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.274-275
• /
• 2006

A new thin film materials can be built up at the molecular level, and the relationship between these artificial structures and the properties of materials can be explored. In this paper, in order to confirm the application possibility to the molecular electronic device of the organic materials, we have investigated electro-luminescent (EL) characteristics of organic EL device using $Alq_3$, PBD as emitting material. Current and luminance can be seen that express a similar relativity in voltage and could know that luminance is expressing current relativity.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.822-825
• /
• 2003

Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. A method for determining the dielectric relaxation time $\tau$ of floating monolayers on water surface is presented. WC flowing across monolayers is analyzed using a rod-like molecular model. It is revealed that the dielectric relaxation time $\tau$ of monolayers in the isotropic polar orientational phase is determined using a liner relationship between the monolayer compression speed ${\alpha}$ and the molecular area Am. Compression speed ${\alpha}$ was about 30, 40, 50mm/min.

• E2M - 전기 전자와 첨단 소재
• /
• 제7권5호
• /
• pp.425-429
• /
• 1994

In this paper, we study on the plasma polymerized styrene as a negative electron-beam resist. Plasma polymerized thin film was prepared using an interelectrode inductively coupled gas-flow type reactor. We show that polymerization parameters of thin film affect sensitivity and etching resistance of the resist. Molecular weight distribution of plasma polymerized styrene is 1.41-3.93, and deposition rates of that are 32-383[.angs./min] with discharge power. Swelling and etching resistance becomes . more improved with increasing discharge power during plasma polymerization. Etch rate by RIE is higher than that by plasma etching.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
• /
• pp.107-110
• /
• 2003

In this paper, We introduced that the method for determing the dielectric relaxation time $\tau$ of floating monolayers on water interface. Displacement current flowing across monolayers is analyzed using a rod-like molecular model. It is revealed that the dielectric relaxation time $\tau$of monolayers in the isotropic polar orientational phase is determined using a linear relationship between the monolayer compression speed $\alpha$ and the molecular area Am. here Displacement current gives a peak at A = Am. The dielectric relaxation time $\tau$ of organic monolayers was examined on the basis of the analysis developed here.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2016년도 임시총회 및 하계학술연구발표회
• /
• pp.133-133
• /
• 2016

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 하계학술대회 논문집 D
• /
• pp.1508-1510
• /
• 1998

Recent development of scanning probe microscope techniques has made it possible to investigate, not only microscopic surface topography, but also physical and chemical properties on the nanometer-scale. The scanning Maxwell-stress microscopy (SMM) is surface characterization tool capable of mapping both the surface topography and electrical properties, such as surface potential, surface charge dielectric constant of thin films with a nanometer-scale resolution by means of the AC voltage driven oscillation of metal coated cantilever. In this study, we observed the surface potential distribution and molecular ordering in thin films. We have demonstrated that the SMM can be used for imaging surface potential distribution over the film surface and also be used for detecting surface changes in thin films. This is first step towards the understanding of electrical phenomena in organic and inorganic materials, biological system with SMM.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
• /
• pp.21-24
• /
• 2000

Properties of thermoelectric power in PbS thin films by chemical bath deposition were investigated The qualified PbS thin film was gained with the amounts of Thiourea($4-8ml/{\ell}$ ), Triethanolamine (1-2ml) and NaOH(l0ml). The molecular ratio of Pb and S was 3 : 7. Satisfied crystallization rate and deposition rate of PbS were greater at $50^{\circ}C$ than at $30^{\circ}C$. The constant of thermoelectric power in PbS was nearly $ 500uv/^{\circ}k$. The PbS thin film was changed from p-type to n-type semiconductor at around $200^{\circ}C$. In case of heat treatment at $300^{\circ}C$, the sample kept the characteristic of p-type semiconductors up to $250^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
• /
• pp.777-779
• /
• 2002

We report the performance of pentacene-based organic thin film transistors (OTFT) with PMMA (polymethyl methacrylate) as the gate insulator which was spin-coated on the ITO (indium tin oxide) glass substrate which was used as the gate contact. The pentacene thin film was deposited on the PMMA film and then Au source/drain contacts were deposited through shadow mask. The pentacene film shows better molecular ordering on PMMA compared with $SiO_2$ of Si wafer. The devices exhibited the field effect mobility of ${\sim}0.004cm^2$/Vs and on/off current ratio of ${\sim}10^3$.

• 한국생물공학회:학술대회논문집
• /
• 한국생물공학회 2000년도 춘계학술발표대회
• /
• pp.149-152
• /
• 2000

GFP는 박막상태에서 쉽게 전자소자로 제작할 수 있으며, 제작된 전자소자는 빛의 여부에 따라 흐르는 전류의 조절이 가능한 광다이오드 특성을 나타내는 것으로 확인되었다. 또한 박막상태에서의 일방향 전자전달 속도와 전자전달 메커니즘이 확인되어, 향후 분자전자소자의 제작시 기반기술로 제공될 수 있을 것으로 사료된다.