• Carbon letters
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• v.15 no.2
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• pp.129-135
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• 2014

Spinnable pitch for melt-electrospinning was obtained from pyrolized fuel oil by electron beam (E-beam) radiation treatment. The modified pitch was characterized by measuring its elemental composition, softening point, viscosity, molecular weight, and spinnability. The softening point and viscosity properties of the modified pitch were influenced by reforming types (heat or E-beam radiation treatment) and the use of a catalyst. The softening point and molecular weight were increased in proportion to absorbed doses of E-beam radiation and added $AlCl_3$ due to the formation of pitch by free radical polymerization. The range of the molecular weight distribution of the modified pitch becomes narrow with better spinning owing to the generated aromatic compounds with similar molecular weight. The diameter of melt-electrospun pitch fibers under applied power of 20 kV decreased 53% ($4.7{\pm}0.9{\mu}m$) compared to that of melt-spun pitch fibers ($10.2{\pm}2.8{\mu}m$). It is found that E-beam treatment for reforming could be a promising method in terms of time-savings and cost-effectiveness, and the melt-electrospinning method is suitable for the preparation of thinner fibers than those obtained with the conventional melt-spinning method.

• Journal of Advanced Marine Engineering and Technology
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• v.29 no.3
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• pp.313-318
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• 2005

Li-doped ZnS layers were grown by molecular beam epitaxy. It was found that relatively low growth temperature is suitable for effective incorporation of Li acceptors. The layers grown under optimized conditions exhibited photoluminescence spectra dominated by neutral-acceptor-bound excitons. Such layers also showed electrically p-type behavior in capacitance-voltage characteristics. The net acceptor concentration is estimated to be approximately $3{\times}10^{15}\;cm^{-3}$.

• Journal of Radiation Industry
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• v.7 no.1
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• pp.51-54
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• 2013

Chitosan is a useful natural polymer material in many application fields such as biomaterials, water-treatment, agriculture, medication, and food science. However, the poor solubility limits its application. In this study, the effects of radiation on chitosan were investigated using gamma ray and electron beam irradiation. The chemical structure and molecular weight analysis show similar degradation effects of chitosan powder in both gamma ray and electron beam irradiation. However, the radiation irradiated chitosan in $H_2O$ has a lower molecular weight, since the hydroxyl radicals attack the glycosidic bonds. This effect is more clearly shown in the electron beam irradiation results.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.52-56
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• 2007

We have installed an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system and investigated into the characteristics of MBE-grown ZnSe/GaAs [001] using scanning electron microscopy (SEM), atomic force microscopy (AFM), we confirmed that layer's surface was dense and uniform of molecular layer. We used x-ray diffractometer (XRD) and confirmed two peaks correspond to GaAs [001] substrate and ZnSe epilayer, respectively. We observed photoluminescence (PL) peak approximately at 437 nm and measured PL mapping of 2 inch ZnSe epilayer.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.25-29
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• 1999

We have developed a laser molecular beam epitaxy system for the layer-by-layer growth of oxide thin films. Using this system, we could grow and control oxide thin films of LaAlO$_3$in a molecular layer epitaxy mode on the atomically flat SrTiO$_3$ substrate with a LaAlO$_3$single crystal target. Very clear RHEED oscillations were observed during to growth of a LaAlO$_3$ film for a long period under the optimized conditions of substrate temperature at $650^{\circ}C$, oxygen pressure at 1$\times$10\ulcorner torr, and an incident laser fluence of 4.6J/$\textrm{cm}^2$. The height of mono-layer-LaAlO$_3$ film grown during one period of RHEED intensity oscillation was 3.8$\AA$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.1-5
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• 1999

The rare-earth ions ($R^{3+}$, R=Nd, Er) doped $CaF_{2}$ layers have been grown on $CaF_{2}$ (111) substrate by molecular beam epitaxy. The surface structure and the crystallinity of $CaF_{2}:R^{3+}$ layers depending on the doping concentration of $R^{3+}$ and layer thickness were studied by reflection high-energy electron diffraction (RHEED). In aspect of application as buffer layer in semiconductor-related hybrid structure, the lattice displacement between $CaF_{2}:R^{3+}$ layers and $CaF_{2}$ (111) substrate was investigated by X-ray rocking curve analysis.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.458-464
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• 2006

The construction and the performance test of an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system has been completed successfully. We have done domestic development and tried performance test for ultra high vacuum molecular beam epitaxy system. This system has reached pressure $2X10-^{10}$ Torr and the substrate has reached temperature $1,100^{\circ}C$. We have investigated into the characteristic of ZnSe/GaAs(001) by using scanning electron microscope (SEM), atomic force microscope (AFM), x-ray diffraction (XRD) and photolumi-nescence (PL).

• Journal of the Korean institute of surface engineering
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• v.43 no.4
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• pp.170-175
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• 2010

The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy(MBE) using the two-step method. The Si(100) substrates were cleaned with different surface cleaning method of vacuum heating, As-beam, and Ga-beam at the substrate temperature of $800^{\circ}C$. Growth temperature and thickness of the GaAs epitaxial layer were $800^{\circ}C$ and 1 ${\mu}m$, respectively. The surface structure and epitaxial growth were observed by reflection high-energy electron diffraction(RHEED) and scanning electron microscope(SEM). Just surface structure of the Si(100) substrate cleaned by Ga-beam at $800^{\circ}C$ shows double domain ($2{\times}1$). RHEED patterns of the GaAs epitaxial layers grown on Si(100) substrates with cleaning method of vacuum heating, As-beam, and Ga-beam show spot-like, ($2{\times}4$) with spot, and clear ($2{\times}4$). From SEM, it is found that the GaAs epitaxial layers grown on Si(100) substrates with Ga-beam cleaning has a high quality.

• Bulletin of the Korean Chemical Society
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• v.16 no.3
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• pp.238-243
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• 1995

A pulsed molecular beam source having short pulse duration (typically 70 ${\mu}s)$ and narrow velocity distribution (${\Delta}$v/v=8% for helium) has been costructed utilizing a commercial fuel injector. Beam characteristics of helium and ammonia seeded in helium expansions are accomplished by the use of an electron impact time-or-flight mass spectrometer. The comparisons between experimental data and theoretical calculations show that the proper beam speed is important to predict the evolution of stream temperature and valve shutter function. The decreasing tendency of pulse duration with increasing cluster size leads to the conclusion that the cluster beam property is described as a function of cluster mass and disinct cluster temperature.

• Carbon letters
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• v.15 no.4
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• pp.262-267
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• 2014

Pyrolized fuel oil (PFO) was reformed by novel electron beam (E-beam) radiation, and the elemental composition, chemical bonds, average molecular weight, solubility, softening point, yields, and density of the modified patches were characterized. These properties of modified pitch were dependent on the reforming method (heat or E-beam radiation treatment) and absorbed dose. Aromaticity ($F_a$), average molecular weight, solubility, softening point, and density increased in proportion to the absorbed dose of E-beam radiation, with the exception of the highest absorbed dose, due to modification by free radical polymerization and the powerful energy intensity of E-beam treatment. The H/C ratio and yield exhibited the opposite trend for the same reason. These results indicate that novel E-beam radiation reforming is suitable for the preparation of aromatic pitch with a high ${\beta}$-resin content.