• 한국진공학회지
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• 제19권4호
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• pp.307-313
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• 2010

본 연구에서는 열 화학기상증착법(thermal chemical vapor deposition)을 이용하여 분말 형태의 규소(Si)와 염화니켈 수화물 $(NiCl_2{\cdot}6H_2O)$을 혼합한 후 탄소공급원인 $CH_4$ 가스를 주입하여 탄화규소 나노선(SiC nanowire)을 합성하였다. 합성 온도와 $CH_4$ 가스 유량 변화에 따른 탄화규소 나노선의 구조적 특성을 분석한 결과, 합성온도가 $1,400^{\circ}C$, $CH_4$ 가스의 유량이 300 sccm인 경우가 탄화규소 나노선의 합성에 최적화된 조건임을 라만 분광법(Raman spectroscopy)과 X-선 회절(X-ray diffraction), 주사전자현미경(scanning electron microscopy), 그리고 투과전자현미경(transmission electron microscopy) 분석을 통해 확인하였다. 합성된 탄화규소 나노선의 직경은 약 50~150 nm이며, 곧은 방향성과 높은 결정성을 가지는 입방구조(cubic structure)를 지니고 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

• 한국식품위생안전성학회지
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• 제38권3호
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• pp.79-88
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• 2023

Trifludimoxazin은 triazinone 계열 제초제로 프로토포르 피리노겐-IX 산화효소(protoporphyrinogen oxidase, PPO)를 억제하며 벼와 광엽 잡초를 방제하는 데 사용된다. PPO의 결핍은 세포막의 손상을 일으켜 식물을 시들게 한다. Trifludimoxazin의 농산물 중 잔류허용기준은 미국에서 아몬드에 대하여 0.15 mg/kg, 땅콩 등 9종에 대하여 0.01 mg/kg으로 설정되어있으며, 모화합물을 잔류물의 정의로 설정하여 관리하고 있다. 코덱스(CODEX), 유럽(EC) 일본(JFCRF)에서는 잔류허용기준(MRL)과 잔류물의 정의가 설정되어 있지 않다. 호주(APVMA)에서는 trifludimoxazin과 대사체 M850H001의 합을 잔류물의 정의로 설정하였으며, MRL은 보리와 밀에 0.01 mg/kg으로 설정되어 있다. 국내에서 신규 등록 예정임에 따라 본 연구에서는 농산물 중 trifludimoxazin의 잔류량을 분석하기 위한 공정시험법을 마련하고자 하였다. Trifludimoxazin의 물리 화학적 특성을 고려하여 아세토니트릴을 추출용매로 사용하는 Quick, easy, cheap, effective, rugged and safe (QuEChERS)법을 이용하여 추출 및 정제조건을 확립한 후 LC-MS/MS를 분석기기로 선정하였다. Trifludimoxazin의 결정계수(R²)는 모두 0.99 이상으로 우수하였으며 정량한계는 0.01 mg/kg으로 나타났다. 대표 농산물 5종(현미, 감자, 대두, 감귤, 고추)에 대하여 정량한계, 정량한계 10배, 정량한계 50배 수준으로 처리하여 회수율 실험을 한 결과 평균 회수율은(5반복) 73.5-85.3%로 나타났으며, 상대 표준편차(RSD)는 3.8% 이하로 나타났다. 본 연구는 국제식품규격위원회 농약 분석법 가이드라인의 잔류농약 분석 기준 및 식품의약품안전평가원의 식품등 시험법 마련 표준절차에 관한 가이드라인(2016)에 적합한 수준이며, 향후 공정시험법으로 활용될 예정이다. 본 연구에서 개발한 시험법에 대해 농산물 125건을 대상으로 잔류농약 모니터링을 한 결과 trifludimoxazin의 잔류량이 확인되지 않았다.