• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.151-152
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• 2002

An oxidized surface layer was intentionally formed on a sputtered $MoS_2$ film by introducing oxygen gas in the final stage of sputtering process. The film showed longer life than the normal Ar-sputtered film when the surface layer was slightly oxidized. A XPS analysis revealed co-existence of $MoS_2$ and $MoO_3$ in the surface layer. suggesting that the existence of some amount of oxides in the surface layer had beneficial effect. A confusing result was obtained: the life was much shorter than normal Ar-sputtered film when the film was exposed to $O_2$ environment for 1 minute after normal Ar-sputtering, although almost no oxide was detected in XPS analysis.

• Journal of the Korean institute of surface engineering
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• v.33 no.4
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• pp.266-272
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• 2000

Sputtered $MoS_2$ thin films provide lubrication and wear improvements for vacuum and space applications. In this study, deposition of $MoS_2$ thin films by R.F. magnetron sputtering was studied with regard to the micro-structural change of $MoS_2$ film and mechanical properties. The coating parameters such as the working pressure, the RF power, the substrate temperature, the etching time were varied to determine how these parameters affected the film morphology and mechanical properties of deposited films. The best wear properties and critical load were observed with the film deposited at $70^{\circ}C$, 1.0$\times$$10^{ -3}$ Torr, 170W and 1 hour deposition time. The critical load increased with the increase of sputter etching time.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2000.11a
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• pp.310-317
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• 2000

Tribological properties of friction materials containing different volume ratios of solid lubricants (graphite and MoS$_2$) were studied using a pad-on-disk type friction tester. Morphology and thickness of the friction film were carefully examined to correlate the friction performance with the property of the friction film. Results showed that the friction materials containing 16vo1. % of graphite and 5 vol. % of MoS$_2$exhibited best friction stability among others. In particular, the thickness of the friction film decreased as the amount of MoS$_2$increased and severe friction oscillation was observed when the friction material contained MoS$_2$only (21 vol. %). Microscopic observations and friction tests suggested that the coherent thick transfer film improved the friction stability.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.46-51
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• 2023

We investigated the MoS₂ thin film layer by thermolytic deposition and applied it to the silicon solar cells. MoS₂ thin films were made by two methods of dipping and spin coating of (NH₄)₂MoS₄ precursor solution. We implemented two types of substrates of microtextured and nano-microtextured 6-in. Si pn junction wafers. The fabricated MoS₂ thin film layer was analyzed, and solar cells were fabricated by applying the standard silicon solar cell process. The MoS₂ thin film layer of sulfur-deficient form was deposited on the n-type emitter layer, and electrons, which are minority carriers, were well transported at the interface and exhibited photovoltaic solar cell characteristics. The cell efficiencies were achieved at 5% for microtextured wafers and 2.56% for nano-microtextured wafers.

• Tribology and Lubricants
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• v.12 no.3
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• pp.107-114
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• 1996

MoS$_{2}$ bonded film was applied to reduction gears, and its lubricating properties were experimentally evaluated in terms of the power transmission efficiency and the frictional noise with a dynamo-typed gear test rig. Tests were performed in both oil lubrication and dry condition where the rotating velocity and loading torque were varied. In dry condition, MoS$_{2}$ bonded films effected the power transmission efficiency to increase about 5%, and the frictional noise level to decrease about 6 dB under the test operating conditions. It well proved that MoS$_{2}$ bonded films were a very effective solid lubricant for reduction gears. In oil lubricating conditions, the frictional properties of the coated gears were mainly governed by the lubricating oil, and lubricating effects of MoS2 bonded films were not evident. The result suggested that lubricating effect of MoS$_{2}$ bonded films would be limited to prevent a damage of reduction gears in the initial run when they were used in oil lubrication conditions.

• Tribology and Lubricants
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• v.16 no.3
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• pp.173-181
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• 2000

Friction, wear and corrosion characteristics of various MoS$_2$ bonded film lubricants were investigated to apply them to automotive wheel joints. MoS$_2$ bonded film lubricants were formulated by combinations of several additives and binders, and they were coated onto the pre-treated surfaces of specimens. Friction and wear characteristics were evaluated with Falex pin & vee-block test and LFW-1 block-on-ring test. For the corrosion resistant characteristics of the films, salt solution spray corrosion tests were performed. Results showed that MoS$_2$ bonded films containing both inorganic and organic corrosion-resistant additives yielded a synergy effect on anti-corrosion resistance. Also, binders having the better water-proof and thermal stability showed the lower friction and higher corrosion resistance.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.375-375
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• 2014

Layered semiconductor materials can be a promising candidate for large-area thin film transistors (TFTs) due to their relatively high mobility, low-power switching, mechanically flexibility, optically transparency, and amenability to a low-cost, large-area growth technique like thermal chemical vapor deposition (CVD). Unlike 2D graphene, series of transition metal dichalcogenides (TMDCs), $MX_2$ (M=Ta, Mo, W, X=S, Se, Te), have a finite bandgap (1~2 eV), which makes them highly attractive for electronics switching devices. Recently, 2D $MoS_2$ materials can be expected as next generation high-mobility thin-film transistors for OLED and LCD backplane. In this paper, we investigate in detail the electrical characteristics of 2D layered $MoS_2$ local bottom-gated transistor with the same device structure of the conventional thin film transistor, and expect the feasibility of display application.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.142-150
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• 2012

In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

• Tribology and Lubricants
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• v.16 no.3
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• pp.223-230
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• 2000

Factors influencing friction reduction with MODTP(molybdenum dialkyl dithiophosphate) lubricant were investigated through a frictioning experiment using two-cylinder edge surface frictioning tester and XPS surface analysis. The friction reduction effect gained with MoDTP lubricant appeared to be largely attributable to MoS$_2$ formation on the frictioning interface. Under N$_2$ atmosphere, Mo diffused into the metal substrate, easily escaping from MoS$_2$ so the friction reduction effect from MoDTP was not gained. However, when an oxide surface film was preliminary prepared on frictioning surface, this Mo diffusion to metal substrate from MoS$_2$ was effectively inhibited. Then desired lubulication effect of MoDTP was gained even under N$_2$atmosphere. As such, the existence of a surface oxide film on the frictioning surface was concluded to be of essential importance in order to gain a lubrcating effect with MoDTP.

• Journal of the Korean institute of surface engineering
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• v.37 no.1
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• pp.1-4
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• 2004

MoS$_2$-Ti films were deposited on SKD-11 tool steel substrate by a D.C. magnetron sputtering system. The influence of deposition parameters on the adhesion of the films was investigated by the scratch test. Crosssection morphology was evaluated using FE-SEM. The plasma etching played an important role on the adhesion of the films. The appropriate etching conditions roughened the surface, resulting In the improved adhesion of the film. The adhesion of the film increased with the interlayer thickness up to 110 nm and then decreased slightly with further increasing of interlayer thickness. The adhesion was highest at a bias voltage of -50 V. Further increase of the bias voltage decreased the film adhesion.