• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.247.2-247.2
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• 2016

산업 발달에 따라 여러 유해 가스들의 양이 많아지고 그 종류가 다양해지고 있다. 이에 따라 가스센서의 필요성도 더욱 증가 하였고, 이러한 변화에 대응하기 위해 기존 가스 센서로 이용되던 $SnO_2$나 ZnO보다 더 나은 화학정 안정성과 내구성을 얻고자 2D $MoO_3$ 박막의 대면적 합성을 연구를 진행하였다. 기존 $MoO_3$ 합성에 사용되던 Pyrolysis 방식이 아닌, 플라즈마 화학기상증착법(PECVD)을 이용해 공정과정을 단순화시켜 센서 수율 증대를 목표로 하였다. E-beam avaporator을 이용해 Mo 금속 박막을 $SnO_2$ 기판 위에 증착시킨 후 $O_2$ 플라즈마를 이용한 Implantation 방식으로 박막을 합성하였고, 라만 분광법, X-ray 광전자 분광법(XPS)을 통해 $MoO_3$ 박막이 nm단위로 합성된 것을 확인하였다. 이를 바탕으로 $MoO_3$ 박막을 2D 가스센서의 소재로 적용하는 것이 가능할 것이라고 예상된다.

• Bulletin of the Korean Chemical Society
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• v.21 no.12
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• pp.1239-1244
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• 2000

A study of K addition to the catalyst of CoMo/ ${\gamma}-Al_2O_3$ was studied. The catalyst with 10 at% of K to Mo atoms in 3C10M, the catalyst added 3 wt% CoO to 10 wt% $MoO_3/{\gamma}-Al_2O_3$, showed the highest activity for water gas shift reaction. The addition of K retarded the reducibility of cobalt-molybdenum catalysts. It gave, however, good dispersion and large BET surface area to the catalysts which were attributed to the disappearance of polymolybdate clustyer such as $Mo_7O_{24}^{6-}$ and the formation of small Mo$O_4^{2-}$ cluster. It was confirmed by the analyses of pore size distribution, activation energy, Raman spectroscopy, and electron diffraction. The activation energies and the frequency factors of the catalysts 3C10M and 5KC10M (the catalyst added 5 at% K for Mo to the catalyst 3C10M) were 43.1 and 47.8 kJ/mole, and 4,297 and 13,505 $sec^{-1}$, respectively. These values were also well correlated with our suggestion. These phenomena were attributed to the direct interaction between K and CoMo oxides irrelevant to the support.

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.173-176
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• 2005

A new $MoO_3$ based microsensor with low power consumption was presented. Typical size of sensor was 5mm in width and 8mm in length. As a sensitive electrode, $MoO_3$ was successfully fabricated by IC technology on pyrex glass of $250{\mu}m$ in thickness. After annealing at $550^{\circ}C$ for 3hrs, the film was fully crystallized and demonstrated as pure $MoO_3$ structure. The grain size of $MoO_3$ was plat like and typical size was about $1{\mu}m$. Based on the results of sensitivity measurement, $MoO_3$ microsensor shows especially high selectivity to $H_2$ reducing gas atmosphere. The applied heater power was lower than 0.5 Watt.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.179-182
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• 1994

We have investigated the optical and electrochromic properties of molybdenum oxide(MoO$_3$) films by thermal evaporation. The MoO$_3$films deposited at substrate temperatures below 200$^{\circ}C$ are found to be amorphous and annealed films at temperature 300$^{\circ}C$ for 1 hour in air are crystalline. The optical energy gap calculated from the transmittance and reflectance spectra of MoO$_3$ films is near 2.75 eV and 3.25 eV for amorphous films and crystalline films, respectively. The MoO$_3$ thin films exhibit light blue to dark blue optical modulation on lithium intercalation and have a uniform transmittance modulation over a wavelength range of 300∼1100 nmcompared to tungsten oxide films.

• Korean Journal of Materials Research
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• v.31 no.11
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• pp.593-600
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• 2021

Herein, a series of g-C₃N₄ modified Bi₂MoO₆ nanocomposites using Bi₂MoO₆ and melamine as original materials are fabricated via sintering process. For presynthesis of Bi₂MoO₆ an ultrasonic-assisted hydrothermal technique is researched. The structure and composition of the nanocomposites are characterized by Raman spectroscopy, X-ray diffraction (XRD), and high-resolution field emission scanning electron microscopy (SEM). The improved photoelectrochemical properties are studied by photocurrent density, EIS, and amperometric i-t curve analysis. It is found that the structure of Bi₂MoO₆ nanoparticles remains intact, with good dispersion status. The as-prepared g-C₃N₄/Bi₂MoO₆ nanocomposites (BMC 5-9) are selected and investigated by SEM analysis, which inhibits special morphology consisting of Bi₂MoO₆ nanoparticles and some g-C₃N₄ nanosheets. The introduction of small sized g-C₃N₄ nanosheets in sample BMC 9 is effective to improve the charge separation and transfer efficiency, resulting in enhancing of the photoelectric behavior of Bi₂MoO₆. The improved photoelectronic behavior of g-C₃N₄/Bi₂MoO₆ may be attributed to enhanced charge separation efficiency, photocurrent stability, and fast electron transport pathways for some energy applications.

• Applied Chemistry for Engineering
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• v.2 no.1
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• pp.30-37
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• 1991

The production of hydrogen from steam by reduced iron with additives such as CuO, $In_2O_3$, $MoO_3$ and $WO_3$ has been kinetically investigated. It was shown that all additives have a promoting effect on reaction activity in the order of $$MoO_3{\gg}In_2O_3{\sim_=}WO_3{\sim_=}CuO$$. The shrinking core model was applied to predict the complete conversion time and the results were quite comparable with experimental values. The reaction was carried out in a fixed flow reactor packed with reduced iron with 1 wt % of additives under the conditions, $600-750^{\circ}C$, Ar flow rate of 1 L/min and steam partial pressure of 0.085 atm. The apparent activation energies were 14.2, 20.9, 21.3, 22.4 and 27.9 kJ/mol with $MoO_3$, $In_2O_3$, $WO_3$, CuO and without additive, respectively.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.611-617
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• 1999

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.525-529
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• 2017

Molybdenum oxide ($MoO_3$) offers pivotal advantages for high optical transparency and low light reflection. Considering device fabrication, n-type $MoO_3$ semiconductor can spontaneously establish a junction with p-type Si. Since the energy bandgap of Si is 1.12 eV, a maximum photon wavelength of around 1,100 nm is required to initiate effective photoelectric reaction. However, the utilization of infrared photons is very limited for Si photonics. Hence, to enhance the Si photoelectric devices, we applied the wide energy bandgap $MoO_3$ (3.7 eV) top-layer onto Si. Using a large-scale production method, a wafer-scale $MoO_3$ device was fabricated with a highly crystalline structure. The $MoO_3/p-Si$ heterojunction device provides distinct photoresponses for long wavelength photons at 900 nm and 1,100 nm with extremely fast response times: rise time of 65.69 ms and fall time of 71.82 ms. We demonstrate the high-performing $MoO_3/p-Si$ infrared photodetector and provide a design scheme for the extension of Si for the utilization of long-wavelength light.

• Korean Journal of Materials Research
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• v.30 no.2
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• pp.81-86
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• 2020

MoO₃ metal oxide nanostructure was formed by hydrothermal synthesis, and a perovskite solar cell with an MoO₃ hole transfer layer was fabricated and evaluated. The characteristics of the MoO₃ thin film were analyzed according to the change of hydrothermal synthesis temperature in the range of 100 ℃ to 200 ℃ and mass ratio of AMT : nitric acid of 1 : 3 ~ 15 wt%. The influence on the photoelectric conversion efficiency of the solar cell was evaluated. Nanorod-shaped MoO₃ thin films were formed in the temperature range of 150 ℃ to 200 ℃, and the chemical bonding and crystal structure of the thin films were analyzed. As the amount of nitric acid added increased, the thickness of the thin film decreased. As the thickness of the hole transfer layer decreased, the photoelectric conversion efficiency of the perovskite solar cell improved. The maximum photoelectric conversion efficiency of the perovskite solar cell having an MoO₃ thin film was 4.69 % when the conditions of hydrothermal synthesis were 150 ℃ and mass ratio of AMT : nitric acid of 1 : 12 wt%.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.187-191
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• 2011

In order to obtain a suitable back contacting electrode for $Cu(InGa)Se_2$-based photovoltaic devices, a molybdenum thin film was deposited using a chemical vapor transport (CVT) during the hydrogen reduction of $MoO_3$ powder. A $MoO_2$ thin film was successfully deposited on substrates by using the CVT of volatile $MoO_3(OH)_2$ at $550^{\circ}C$ for 60 min in a $H_2$ atmosphere. The Mo thin film was obtained by reduction of $MoO_2$ at $650^{\circ}C$ in a $H_2$ atmosphere. The Mo thin film on the substrate presented a low sheet resistance of approximately $1{\Omega}/sq$.