• Korean Journal of Optics and Photonics
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• v.24 no.2
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• pp.77-85
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• 2013

The precision of retardation measurement has been improved upto $3{\sigma}$ <0.005 nm after improvements are made to the conventional transmission ellipsometer. Improvements are made such that, i) the polarizer module instead of the sample stage is rotated, ii) the light source is replaced, iii) the starting points of two rotating modules are accurately synchronized, and iv) the fine background retardation is compensated. Together with the newly introduced RVD (Retardation Vector Difference) method, the improved instrument is successfully applied to characterize the ultra small optical birefringence of the rubbed polyimide alignment layer, after the residual retardation due to glass substrate whose magnitude is about 1.0 nm is properly subtracted. It is verified that the net retardation of the alignment layer ranges from 0.05 nm to 0.15 nm.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2207-2212
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• 2012

Dimethylaluminum isopropoxide (DMAI, $(CH_3)_2AlO^iPr$) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide ($AlO_x$) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited $AlO_x$ film was measured to be Al:O = ~1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that ${\beta}$-hydrogen elimination mechanism is mainly contributed to the $AlO_x$ CVD process of DMAI precursor. The current-voltage characteristics of the $AlO_x$ film in Au/$AlO_x$/Ir metalinsulator-metal (MIM) capacitor structure show high ON/OFF ratio larger than ${\sim}10^6$ with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.

• Publications of The Korean Astronomical Society
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• v.30 no.2
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• pp.687-690
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• 2015

For research and development of Silicon Carbide (SiC) mirrors, the Korea Astronomy and Space Science Institute (KASI) and National Optical Astronomy Observatory (NOAO) have agreed to cooperate and share on polishing and measuring facilities, experience and human resources for two years (2014-2015). The main goals of the SiC mirror polishing are to achieve optical surface figures of less than 20 nm rms and optical surface roughness of less than 2 nm rms. In addition, Green Optics Co., Ltd (GO) has been interested in the SiC polishing and joined the partnership with KASI. KASI will be involved in the development of the SiC polishing and the optical surface measurement using three different kinds of SiC materials and manufacturing processes (POCO$^{TM}$, CoorsTek$^{TM}$ and SSG$^{TM}$ corporations) provided by NOAO. GO will polish the SiC substrate within requirements. Additionally, the requirements of the optical surface imperfections are given as: less than 40 um scratch and 500 um dig. In this paper, we introduce the international collaboration and interim results for SiC mirror polishing and development.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.492-497
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• 2001

We report the characteristics and the dependence of sputter-deposited Ta films on the process parameters. The properties of as-deposited Ta films such as deposition rate, resistivity, Rs uniformity, reflectivity, and stress were investigated and analyzed as a function of process parameter using a statistical experimental method. The functional relationships between the independent and dependent variables were predicted by surface response. The optimal deposition condition of DC magnetron sputtered Ta films was obtained at the chamber pressure of 2 mTorr, power density of 8 W/$\textrm{cm}^2$, and substrate temperature of 2$0^{\circ}C$ by means of resistivity and Rs uniformity. The fitness value for quadratic model as evaluated by the R- square was 0.85~ 0.9 without pooling. The as-deposited Ta films exhibited the resistivity of ~180$\mu$$\Omega$cm with Rs uniformity of ~2%. The transmission electron microscopy and x-ray diffractometry identified that the phase of as-deposited film was $\beta$-Ta having the grain size of 100~200.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.1 s.116
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• pp.44-52
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• 2007

In this paper, An active antenna of T-DMB was developed to equip to handhold gadgets by using LNA and a parasitic element allowing to miniature. The size of the fabricated active antenna is $80{\times}6{\times}0.4\;mm$ and FR4 is used for the substrate. The size of the proposed antenna is reduced by 38.8% at the operating frequency compared to one without a parasitic element, and a short stub. The proposed antenna shows improved performance at the measurement especially in the ratio of S/N compared with conventional monopole of 300 mm. The proposed antenna is well able to adapt into handhold gadgets for receiving T-DMB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.7
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• pp.774-783
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• 2012

In this paper, a periodically corrugated transmission line is proposed. The proposed transmission line can reduce crosstalk between transmission lines. The corrugated transmission line can adjust the amount of inductive coupling and capacitive coupling equally. Thus, the crosstalk is effectively reduced because the inductive coupling and capacitive coupling cancel each other. The corrugated transmission line is fabricated on RO4003 substrate with a dielectric constant of 3.38 and a thickness of 0.508 mm. The simulated far-end crosstalks of conventional transmission line and corrugated transmission line with a period of A=1 mm have maximum values of -3.6 dB and -22 dB, respectively, up to 30 GHz. Measurement results showed that far-end crosstalks of the conventional and corrugated transmission line have maximum values of -6.3 dB and -20.5 dB, respectively, up to 30 GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.203-207
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• 2018

In this work, we investigate the effects of lithium doping on the electric performance of solution-processed n-type zinc tin oxide (ZTO)/p-type silicon carbide (SiC) heterojunction diode structures. The proper amount of lithium doping not only affects the carrier concentration and interface quality but also influences the temperature sensitivity of the series resistance and activation energy. We confirmed that the device characteristics vary with lithium doping at concentrations of 0, 10, and 20 wt%. In particular, the highest rectification ratio of $1.89{\times}107$ and the lowest trap density of $4.829{\times}1,022cm^{-2}$ were observed at 20 wt% of lithium doping. Devices at this doping level showed the best characteristics. As the temperature was increased, the series resistance value decreased. Additionally, the activation energy was observed to change with respect to the component acting on the trap. We have demonstrated that lithium doping is an effective way to obtain a higher performance ZTO-based diode.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.37-43
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• 2009

Silicon dioxide as gate dielectrics was grown at $400^{\circ}C$ on a polycrystalline Si substrate by inductively coupled plasma oxidation using a mixture of $O_2$ and $N_2O$ to improve the performance of polycrystalline Si thin film transistors. In conventional high-temperature $N_2O$ annealing, nitrogen can be supplied to the $Si/SiO_2$ interface because a NO molecule can diffuse through the oxide. However, it was found that nitrogen cannot be supplied to the Si/$SiO_2$ interface by plasma oxidation as the $N_2O$ molecule is broken in the plasma and because a dense Si-N bond is formed at the $SiO_2$ surface, preventing further diffusion of nitrogen into the oxide. Nitrogen was added to the $Si/SiO_2$ interface by the plasma oxidation of mixtures of $O_2/N_2O$ gas, leading to an enhancement of the field effect mobility of polycrystalline Si TFTs due to the reduction in the number of trap densities at the interface and at the Si grain boundaries due to nitrogen passivation.

• Food Science of Animal Resources
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• v.27 no.4
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• pp.496-500
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• 2007

The lactase activities of nine species of lactic acid bacteria were compared using the chromogenic substrate, $o-nitrophenyl-{\beta}-D-galactopyranoside$. Streptococcus thermophilus KACC 91147 had the highest lactase activity among a total of thirty strains of Lactobacillus and S. thermophilus tested, including commercial strains. S. thermophilus KACC 91147 released $0.30{\pm}0.12\;mg/mL$ of galactose in treated milk A ($10^7\;CFU/mL$) and $6.49{\pm}0.38\;mg/mL$ in treated milk B ($10^9\;CFU/mL$ milk) over 2 hours. In milk tolerance tests, the blood glucose level (BGL) of 6 volunteers (2 males and 4 females) clinically diagnosed as lactose intolerant increased 3.0 mg/dl after drinking milk A, but a significant (p<0.05) additional increase of $11.2{\pm}4.18\;mg/dl$ was found after drinking milk B. This result suggests that the addition of S. thermophilus KACC 91147 cells into milk aids the digestion of lactose in milk and ameliorates the symptoms of lactose-intolerant individuals due to the activity of lactase from the lactic streptococci.

• Korean Journal of Metals and Materials
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• v.46 no.7
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• pp.458-463
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• 2008

High purity Fe thin films were prepared by the ion beam deposition method with $^{56}Fe^{+}$ions on the Si substrate at the room temperature. The Fe thin films were deposited at the ion energy of 50 eV and 100 eV. Microstructural properties were investigated on the atomic scale using high-resolution transmission electron microscopy (HRTEM). It was found that the Fe thin film obtained with the energy of 50 eV having an excellent corrosion resistance consists of the amorphous layer of ~15 nm in thickness and the bcc crystalline layer of about 30 nm in grain size, while the thin film obtained with the energy of 100 eV having a poor corrosion resistance consists of little amorphous layer and the defective crystalline layer. Furthermore the crystal structures and arrangements of the oxide layers formed on the Fe thin films were analyzed by processing of the HRTEM images. It was concluded that the corrosion behavior of Fe thin films relates to the surface morphology and the crystalline structure as well as the degree of purification.