• 제목/요약/키워드: Mo substrate

검색결과 440건 처리시간 0.027초

R2R 공정에서 적외선가열과 열풍을 혼합한 건조방식에서 전도성 금속 잉크의 건조 및 큐어링 공정 특성에 관한 실험적 연구 (An Experimental Study on the Drying and Curing Characteristics of Conductive metallic ink using Combined IR and Hot Air Type in the Roll-to-Roll System)

  • 김영모;홍승찬;이재효
    • 반도체디스플레이기술학회지
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    • 제9권2호
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    • pp.73-78
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    • 2010
  • This research is about the drying and curing characteristic of conductivity metallic ink on-line curing device in order to improve the curing time for productivity in RFID Gravure printing. The curing process is carried out to increase the electric conductivity after the metallic ink is printed on the substrate. The metal ink is composed of nano-sized silver or copper particles. In this research, the combined IR and Hot air curing system is used and its results is compared with those of oven, IR and Hot Air type respectively. Generally the curing time in the past is about 3 minutes. But the combined system (IR+Hot Air) in this research shows that curing time is less than 30 seconds. These results is much faster than those of other system. This study can be help to make Roll-to-Roll drying and curing process for mass and continuous production on-line.

Gate/Body-Tied 구조의 고감도 광검출기를 이용한 2500 fps 고속 바이너리 CMOS 이미지센서 (2500 fps High-Speed Binary CMOS Image Sensor Using Gate/Body-Tied Type High-Sensitivity Photodetector)

  • 김상환;권현우;장준영;김영모;신장규
    • 센서학회지
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    • 제30권1호
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    • pp.61-65
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    • 2021
  • In this study, we propose a 2500 frame per second (fps) high-speed binary complementary metal oxide semiconductor (CMOS) image sensor using a gate/body-tied (GBT) p-channel metal oxide semiconductor field effect transistor-type high-speed photodetector. The GBT photodetector generates a photocurrent that is several hundred times larger than that of a conventional N+/P-substrate photodetector. By implementing an additional binary operation for the GBT photodetector with such high-sensitivity characteristics, a high-speed operation of approximately 2500 fps was confirmed through the output image. The circuit for binary operation was designed with a comparator and 1-bit memory. Therefore, the proposed binary CMOS image sensor does not require an additional analog-to-digital converter (ADC). The proposed 2500 fps high-speed operation binary CMOS image sensor was fabricated and measured using standard CMOS process.

MO Theoretical Studies on the Benzylic and Resonance Shunt Effects

  • Ikchoon Lee;Jeong Ki Cho;Chang Kon Kim
    • Bulletin of the Korean Chemical Society
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    • 제12권2호
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    • pp.182-188
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    • 1991
  • The reactions of aniline with benzyl and phenacyl compounds are studied by the AM1 method. Two types of modeling were adopted: Cation-neutral, in which a proton is attached to the leaving group F and anion-neutral model, in which aniline was replaced by phenoxide with Cl as the leaving group. The cation-neutral model represented the reactvery well, reproducing the various solution-phase experimental results. In the benzyl system, the ${\pi}$-electrons of the two rings (X-ring in the nucleophile and Y-ring in the substrate) interact conjugatively in the transition state (TS) resulting in a bond contraction of the $C_{\alpha}-C_{Y1}$ bond (benzylic effect), whereas in the phenacyl system the ${\pi}$ electrons of the X-ring delocalizes more efficiently into the carbonyl group than into the Y-ring (resonance shunt effect) with a bond contraction of the $C_{\alpha}-C_{\beta}$ bond. The bond contraction in the benzylic effect was substantially greater than that in the resonance shunt effect. The TS was rather loose for benzyl while it was tighter for phenacyl system. Various bond length changes with substituents in the TS were, however, found to be irregular.

Fabrication and Characterization of Cu3SbS4 Solar Cell with Cd-free Buffer

  • Han, Gyuho;Lee, Ji Won;Kim, JunHo
    • Journal of the Korean Physical Society
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    • 제73권11호
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    • pp.1794-1798
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    • 2018
  • We have grown famatinite $Cu_3SbS_4$ films by using sulfurization of Cu/Sb stack film. Sulfurization at $500^{\circ}C$ produced famatinite $Cu_3SbS_4$ phase, while $400^{\circ}C$ and $450^{\circ}C$ sulfurization exhibited unreacted and mixed phases. The fabricated $Cu_3SbS_4$ film showed S-deficiency, and secondary phase of $Cu_{12}Sb_4S_{13}$. The secondary phase was confirmed by X-ray diffraction, Raman spectroscopy, photoluminescence and external quantum efficiency measurements. We have also fabricated solar cell in substrate type structure, ITO/ZnO/(Zn,Sn)O/$Cu_3SbS_4$/Mo/glass, where $Cu_3SbS_4$ was used as a absorber layer and (Zn,Sn)O was employed as a Cd-free buffer. Our best cell showed power conversion efficiency of 0.198%. Characterization results of $Cu_3SbS_4$ absorber indicates deep defect (due to S-deficiency) and low shunt resistance (due to $Cu_{12}Sb_4S_{13}$ phase). Thus in order to improve the cell efficiency, it is required to grow high quality $Cu_3SbS_4$ film with no S-deficiency and no secondary phase.

Ni-25at.%Al 금속간화합물의 연소합성반응에 미치는 사전 Annealing 처리의 영향 (Effects of Pre-Annealing Treatment on the Combustion Synthesis of Ni3Al Intermetallics Coating)

  • 이한영;모남규
    • Tribology and Lubricants
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    • 제37권2호
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    • pp.62-70
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    • 2021
  • The problem with intermetallics coating using the heat of molten casting is that the heat generated during combustion synthesis dissolves the coating and the substrate metal. This study investigates whether pre-annealing before synthesis can control the reaction heat, with the aim of Ni3Al coating on the casting surface. Therefore, the effects of the annealing temperature and time on the combustion synthesis behavior of the powder compact of Ni-25at%Al after annealing were investigated. As results, the reaction heat when synthesized decreased as the annealing temperature was high and the annealing time was longer. This was attributed to the fact that Al was diffused to Ni particles during low temperature annealing and intermediate Ni-Al compounds were formed during high temperature annealing. After combustion synthesis, however, it was found that their microstructures were almost identical except for the amount of intermediate intermetallics. Furthermore, an annealing temperature above 450℃, at which intermediate compounds begin to form, is needed to prevent the dissolving problem during synthesizing. The intermetallics synthesized after annealing at higher temperature and prolonger annealing time showed a good wear resistance. This might be because much intermediate intermetallics of high hardness were remained in the microstructure.

국내 수송환경에 적합한 마찰전기 나노발전기의 발전특성 분석 (Analysis of Power Generation Characteristics of TENG (Triboelectric Nanogenerator) Suitable for Domestic Transport Environment)

  • 박종민;정현모
    • 한국포장학회지
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    • 제28권3호
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    • pp.193-199
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    • 2022
  • Sustainable energy supplies without the recharging and replacement of charge storage device have become increasingly important. Among various energy harvesters, the triboelectric nanogenerator (TENG) has attracted considerable attention due to its high instantaneous output power, broad selection of available materials, eco-friendly and inexpensive fabrication process, and various working modes customized for target applications. The TENG harvests electrical energy from wasted mechanical energy in the ambient environment. TENG devices are very likely to be used in next-generation renewable energy and energy harvesting. TENG devices have the advantage of being able to manufacture very simple power devices. In this experiment, various organic dielectrics and inorganic dielectrics were used to improve the open voltage of TENG, Among the various organic dielectrics, Teflon-based FEP, which has the highest electron affinity, showed the highest open voltage and Al electrode was fabricated on Teflon substrate by sputtering deposition process. And AAO (Anodized Aluminum Oxide) nanostructures were applied to maximize the specific surface area of the TENG device. The power generation of TENG within the acceleration level (0.25, 0.5, 1.0, 1.5 and 2 G) and the frequency range (5-120 Hz) of the domestic transport environment was up to 4 V.

Comparative Study of Undoped and Nickel-Doped Molybdenum Oxide Photoanodes for PEC Water Splitting

  • Garcia-Garcia, Matias
    • Journal of Electrochemical Science and Technology
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    • 제13권3호
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    • pp.377-389
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    • 2022
  • The current global energy supply depends heavily on fossil fuels. This makes technology such as direct water splitting from harvesting solar energy in photoelectrochemical (PEC) systems potentially attractive due to its a promising route for environmentally benign hydrogen production. In this study, undoped and nickel-doped molybdenum oxide photoanodes (called photoanodes S1 and S2 respectively) were synthesized through electrodeposition by applying -1.377 V vs Ag/AgCl (3 M KCl) for 3 hours on an FTO-coated glass substrate immersed in molibdatecitrate aqueous solutions at pH 9. Scanning electron microscopy (SEM), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS) were used for microstructural and compositional characterizations of the photoanodes. In addition, the optical and photoelectrochemical characterizations of these photoanodes were performed by UV-Visible spectroscopy, and linear scanning voltammetry (LSV) respectively. The results showed that all the photoanodes produced exhibit conductivity and catalytic properties that make them attractive for water splitting application in a photoelectrochemical cell. In this context, the photoanode S2 exhibited better photocatalytic activity than the photoanode S1. In addition, photoanode S2 had the lowest optical band-gap energy value (2.58 eV), which would allow better utilization of the solar spectrum.

4H-SiC 기판 위에 RF Sputter로 증착된 NiO 박막의 후열처리 효과 (Post-annealing Effect of NiO Thin Film Grown by RF Sputtering System on 4H-SiC Substrate)

  • 문수영;김민영;변동욱;이건희;구상모
    • 한국전기전자재료학회논문지
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    • 제36권2호
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    • pp.170-174
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    • 2023
  • Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices. P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.

Chemistry of mist deposition of organic polymer PEDOT:PSS on crystalline Si

  • Shirai, Hajime;Ohki, Tatsuya;Liu, Qiming;Ichikawa, Koki
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.388-388
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    • 2016
  • Chemical mist deposition (CMD) of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was investigated with cavitation frequency f, solvent, flow rate of nitrogen, substrate temperature $T_s$, and substrate dc bias $V_s$ as variables for efficient PEDOT:PSS/crystalline (c-)Si heterojunction solar cells (Fig. 1). The high-speed camera and differential mobility analysis characterizations revealed that average size and flux of PEDOT:PSS mist depend on f, solvent, and $V_s$. The size distribution of mist particles including EG/DI water cosolvent is also shown at three different $V_s$ of 0, 1.5, and 5 kV for a f of 3 MHz (Fig. 2). The size distribution of EG/DI water mist without PEDOT:PSS is also shown at the bottom. A peak maximum shifted from 300-350 to 20-30 nm with a narrow band width of ~150 nm for PEDOT:PSS solution, whose maximum number density increased significantly up to 8000/cc with increasing $V_s$. On the other hand, for EG/water cosolvent mist alone, the peak maximum was observed at a 72.3 nm with a number density of ~700/cc and a band width of ~160 nm and it decreased markedly with increasing $V_s$. These findings were not observed for PEDOT:PSS/EG/DI water mist. In addition, the Mie scattering image of PEDOT:PSS mist under white bias light was not observed at $V_s$ above 5 kV, because the average size of mist became smaller. These results imply that most of solvent is solvated in PEDOT:PSS molecule and/or solvent is vaporized. Thus, higher f and $V_s$ generate preferentially fine mist particle with a narrower band width. Film deposition occurred when $V_s$ was impressed on positive to a c-Si substrate at a Ts of $30-40^{\circ}C$, whereas no deposition of films occurred on negative, implying that negatively charged mist mainly provide the film deposition. The uniform deposition of PEDOT:PSS films occurred on textured c-Si(100) substrate by adjusting $T_s$ and $V_s$. The adhesion of CMD PEDOT:PSS to c-Si enhanced by $V_s$ conspicuously compared to that of spin-coated film. The CMD PEDOT:PSS/c-Si solar cell devices on textured c-Si(100) exhibited a ${\eta}$ of 11.0% with the better uniformity of the solar cell parameters. Furthermore, ${\eta}$ increased to 12.5% with a $J_{sc}$ of $35.6mA/cm^2$, a $V_{oc}$ of 0.53 V, and a FF of 0.67 with an antireflection (AR) coating layer of 20-nm-thick CMD molybdenum oxide $MoO_x$ (n= 2.1) using negatively charged mist of 0.1 wt% 12 Molybdo (VI) phosphoric acid n-Hydrate) $H_3(PMo_{12}O_40){\cdot}nH_2O$ in methanol. CMD. These findings suggest that the CMD with negatively charged mist has a great potential for the uniform deposition of organic and inorganic on textured c-Si substrate by adjusting $T_s$ and $V_s$.

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왕송이버섯(Tricholoma gigantium)의 인공재배를 위한 환경조건 구명 (Development of artificial cultivation conditions on Tricholoma gigantium)

  • 장갑열;박정식;정종천;공원식;유영복;전창성;성재모
    • 한국버섯학회지
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    • 제5권3_4호
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    • pp.98-102
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    • 2007
  • 왕송이버섯의 인공재배법을 개발하기 위하여 농업과학기술원에서 보존중인 MKACC50852 등 4개 균주를 사용하였으며 우선 이들의 RAPD 분석을 통한 유전적 다형성을 분석하여 유사도를 알아보았다. 일본에서 수집한 MKACC50852균주와 인천에서 채집한 자생균주인 MKACC53368이 높은 유연관계를 보였으며, 제주도에서 채집한 MKACC50853은 태국에서 수집한 MKACC53359와 높은 유연관계를 보였다. 왕송이버섯의 인공재배 방법을 개발하기 위해 봉지재배 및 상자매몰 재배를 비교 실험한 결과, 봉지재배가 상자재배보다 초발이소요일수가 빨랐으며 발이정도에서는 큰 차이는 보이지 않았다. 균주별 자실체 발생에서 MKACC50852 및 MKACC53368는 버섯이 발생되었으며 그 외의 균주는 버섯이 발생하지 않았다. 특히, MKACC50852가 자실체의 품질 및 발이율이 가장 높았으며 복토 후 균상생장도 양호하였다. 왕송이버섯의 재배사내 습도별 자실체 생장율은 발이 후 습도를 80%이상 유지 시 자실체 생장율이 좋았으며, 복토 후 균사생장 완료전 약 70%정도 균사 생장시 하온 처리에 의한 발이유기가 효과적이라고 생각되며 발이유기 및 자실체 생장시 주야간 온도편차 유지가 가능하고 환기가 용이한 재배사가 적절하다고 판단된다. 왕송이버섯의 간편한 재배 체계를 확립하고자 폐면 및 톱밥배지를 사용하여 상자재배와 봉지재배시 미강, 밀기울 등 첨가제를 각각 3, 5, 7%씩 처리하여 자실체발생 및 수량을 조사한 결과, 첨가제 중 미강 처리구보다는 밀기울 처리구에서 균사생장이 양호하였으며 배양기간과 발이기간도 단축되었으나, 수량은 폐면 단용구에 비해 낮았다. 균주별로는 MKACC50852 균주가 폐면단용구에서 발이 및 수량(455g/봉지)이 가장 양호하였으며 MKACC53359는 비록 수량은 낮은 편이었으나 처리별로 고른 발이율을 보였다. 결론적으로, 왕송이버섯 자실체 발생을 위해서는 첨가제의 종류보다는 재배환경요인이 더 큰 영향을 준다고 생각된다.

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