• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.159-159
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• 2011

Among the semiconductor ternary compounds in the I-III-$VI_2$ series, $CulnS_2$ ($CulnSe_2$) are one of the promising materials for photovoltaic applications because of the suitability of their electrical and optical properties. The $CuInS_2$ thin film is one of I-III-$VI_2$ type semiconductors, which crystallizes in the chalcopyrite structure. Its direct band gap of 1.5 eV, high absorption coefficient and environmental viewpoint that $CuInS_2$ does not contain any toxic constituents make it suitable for terrestrial photovoltaic applications. A variety of techniques have been applied to deposit $CuInS_2$ thin films, such as single/double source evaporation, coevaporation, rf sputtering, chemical vapor deposition and chemical spray pyrolysis. This is the first report that $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) technique which is a novel and attractive method because thin films with high deposition rate can be grown at very low cost. In this study, $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) method which employs a nozzle expansion. The mixed fluid is expanded through the nozzle into the chamber evacuated in a lower pressure to deposit $CuInS_2$ films on Mo coated glass substrate. In this AJD system, the characteristics of $CuInS_2$ films are dependent on various deposition parameters, such as compositional ratio of precursor solution, flow rate of carrier gas, stagnation pressure, substrate temperature, nozzle shape, nozzle size and chamber pressure, etc. In this report, $CuInS_2$ thin films are deposited using the deposition parameters such as the compositional ratio of the precursor solution and the substrate temperature. The deposited $CuInS_2$ thin films will be analyzed in terms of deposition rate, crystal structure, and optical properties.

• Korean Journal of Optics and Photonics
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• v.20 no.5
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• pp.294-300
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• 2009

To improve the output power of a photomixer as a THz source, we propose a four-leaf clover-shaped antenna structure which is composed of a highly resonant radiation element and a stable DC feed element. The resonance characteristics of the proposed structure were investigated on a half-infinite substrate first as a simplified radiation environment in order to save the computation time. Based on the antenna characteristics on a half-infinite substrate, the antenna structure was designed to have a maximum total efficiency and a maximum directivity on an extended hemispherical lens. In comparison with a full-wavelength dipole, an input resistance of this structure increased six fold and this characteristic significantly improved the mismatch efficiency between a photomixer and an antenna. THz output power from this structure is expected to increase by 2.7 times as compared to a full-wavelength dipole case.

• Korean Journal of Materials Research
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• v.18 no.3
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• pp.148-152
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• 2008

A new cost-effective atomic layer deposition (ALD) technique, known as Proximity-Scan ALD (PS-ALD) was developed and its benefits were demonstrated by depositing $Al_2O_3$ and $HfO_2$ thin films using TMA and TEMAHf, respectively, as precursors. The system is consisted of two separate injectors for precursors and reactants that are placed near a heated substrate at a proximity of less than 1 cm. The bell-shaped injector chamber separated but close to the substrate forms a local chamber, maintaining higher pressure compared to the rest of chamber. Therefore, a system configuration with a rotating substrate gives the typical sequential deposition process of ALD under a continuous source flow without the need for gas switching. As the pressure required for the deposition is achieved in a small local volume, the need for an expensive metal organic (MO) source is reduced by a factor of approximately 100 concerning the volume ratio of local to total chambers. Under an optimized deposition condition, the deposition rates of $Al_2O_3$ and $HfO_2$ were $1.3\;{\AA}/cycle$ and $0.75\;{\AA}/cycle$, respectively, with dielectric constants of 9.4 and 23. A relatively short cycle time ($5{\sim}10\;sec$) due to the lack of the time-consuming "purging and pumping" process and the capability of multi-wafer processing of the proposed technology offer a very high through-put in addition to a lower cost.

• Korean Journal of Optics and Photonics
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• v.30 no.4
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• pp.159-166
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• 2019

The trajectory of the transmission ellipsometric pseudoconstant ${\rho}=tan{\psi}_{\mu}e^{i{\Delta}_{\mu}}$ of a uniaxially anisotropic substrate like PET forms a circle in polar coordinates, as the phase-retardation angle is varied at a fixed azimuthal angle. The radius as well as the center's position of this circle are functions of the azimuthal angle only. This circle passes through the point (1,0), and the center of this circle is located on the real axis. These characteristics of the circle are examined analytically, and are utilized to derive simple expressions for the azimuthal angle and the phase-retardation angle of the uniaxially anisotropic substrate using the measured transmission ellipsometric constant. Finally, we confirm that the derived expressions are well applied to the analysis of the optical anisotropy of a PET film.

• Journal of Powder Materials
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• v.28 no.6
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• pp.483-490
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• 2021

A new Fe-Cr-Mo-B-C amorphous alloy is designed, which offers high mechanical strength, corrosion resistance as well as high glass-forming ability and its gas-atomized amorphous powder is deposited on an ASTM A213-T91 steel substrate using the high-velocity oxygen fuel (HVOF) process. The hybrid coating layer, consisting of nanocrystalline and amorphous phases, exhibits strong bonding features with the substrate, without revealing significant pore formation. By the coating process, it is possible to obtain a dense structure in which pores are hardly observed not only inside the coating layer but also at the interface between the coating layer and the substrate. The coating layer exhibits good adhesive strength as well as good wear resistance, making it suitable for coating layers for biomass applications.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.18-22
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• 2023

We have investigated the effect of the concentration of oxygen vacancies on the characteristics of Mo-doped ZnO (MZO) thin films for the TCO (transparent conducting oxide). For this purpose, MZO thin films were deposited by RF magnetron sputtering at different substrate temperature from room temperature to 300℃. The electrical resistivity of the MZO films decreases with increasing substrate temperature up to 100℃ and then gradually increases at higher temperatures. To investigate the influences of the ambient gases, the flow rate of oxygen and hydrogen in argon was varied from 0.1 sccm to 0.5 sccm. The MZO thin films were preferentially oriented to the (002) direction, regardless of the ambient gases used. The electrical resistivity of the MZO thin films increased with increasing O₂ flow rates, whereas the electrical resistivity decreased sharply under an Ar+H₂ atmosphere and was nearly the same, regardless of the H₂ flow rate used. As the oxygen vacancy concentration increases, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the MZO thin film's electrical characteristics. All the films showed an average transmittance of over 80% in the visible range.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.1
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• pp.63-68
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• 2018

This paper presents an integrated photochemical reaction system (i.e., an artificial leaf) that uses earth-abundant catalysts for artificial photosynthesis with a carbon dioxide ($CO_2$) fixation process. The performance of the system was investigated in terms of the energy capture and conversion capabilities. A wireless configuration was achieved by directly doping cobalt oxide as an oxygen-evolving catalyst for water splitting reaction on the illuminated surface of photovoltaic (PV) cell, as well as molybdenum disulfide ($MoS_2$) as an efficient catalyst for $CO_2$ reduction on the back substrate surfaces of the PV cell. The system produces hydrogen and carbon monoxide (CO) as sustainable fuels (i.e., synthesis gas) at around 4.5% efficiency, which implies more than 75% catalytic efficiency at the cathode. The process of solar-driven $CO_2$ conversion and water-splitting reaction is contained in one system, which is one step closer to the successful realization of artificial photosynthesis.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.257-263
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• 2006

We have investigated the effect of silver added to Cu films on the microstructure evolution, resistivity, surface morphology, stress relaxation temperature, and adhesion properties of Cu(Ag) alloy thin films deposited on Mo glue layer upon annealing. In addition, pure Cu films deposited on Mo has been annealed and compared. The results show that the silver in Cu(Ag) thin films control the grain growth through the coarsening of its precipitates upon annealing at $300^{\circ}C{\sim}600^{\circ}C$ and the grain growth of Cu reveals the activation energy of 0.22 eV, approximately one third of activation energy for diffusion of Ag dopant along the grain boundaries in Cu matrix (0.75 eV). This indicates that the grain growth can be controlled by Ag diffusion along the grain boundaries. In addition, the grain growth can be a major contributor to the decreased resistivity of Cu(Ag) alloy thin films at the temperature of $300^{\circ}C{\sim}500^{\circ}C$, and decreases the resistivity of Cu(Ag) thin films to $1.96{\mu}{\Omega}-cm$ after annealing at $600^{\circ}C$. Furthermore, the addition of Ag increases the stress relaxation temperature of Cu(Ag) thin films, and thus leading to the enhanced resistance to the void formation, which starts at $300^{\circ}C$ in the pure Cu thin films. Moreover, Cu(Ag) thin films shows the increased adhesion properties, possibly resulting from the Ag segregating to the interface. Consequently, the Cu(Ag) thin films can be used as a metallization of advanced TFT-LCDs.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.162-162
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• 2000

We have studied magnetic properties of Co/Pt multilayered films which have attracted great interest as high-density magneto-optical (MO) recording media due to their good MO properties. For this study, [Pt(45 )/Co(35 )]$\times$8 films were deposited with a Pt buffer layer of 60 on Si(100) substrate by alternating electron-beam evaporation in a high vacuum and were ion beam mixed by using 80keV Ar+ at 25$0^{\circ}C$. Especially, an external magnetic field was added to help changing magnetic property during ion beam mixing (IBM). The intermixing of Co and Pt layers after IBM was confirmed with Rutherford Backscattering Spectroscopy (RBS) and Transmission Electron Microscopy (TEM). The MO property of the film was measured with magneto-optical Kerr spectrometer and the change of magnetic easy axis in the film plane was observed from Ker loop data. This anomalous result might be correlated with the change of atomic structure due to the intermixing effect.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.988-996
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• 1995

CuInSe$_2$this films as a light absorber layer were fabricated by vacuum evaporation using In$_2$Se$_3$and Cu$_2$Se precursors and their properties were analyzed. Indium selenide films of 0.5${\mu}{\textrm}{m}$ thickness were first deposited by vacuum evaporation of In$_2$Se$_3$ on a Corning 7059 glass substrate. The films deposited at suscepor temperature of 40$0^{\circ}C$ showed a flat surface morphology with densely Packed grain structure. CuInSe$_2$films directly formed by evaporating Cu$_2$Se on the predeposited In$_2$Se$_2$films also showed a very flat surface when the susceptor temperature was $700^{\circ}C$. Cu$_2$Se, a second phase in the CuInSe$_2$film, was removed by evaporating additional In$_2$Se$_3$on the CuInSe$_2$film at $700^{\circ}C$. The grain size of 1.2${\mu}{\textrm}{m}$ thick CuInSe$_2$, film was about 2${\mu}{\textrm}{m}$ and the film had a (112) preferred orientation. As the amount of deposited In$_2$Se$_3$increased, the electrical resistivity of CuInSe$_2$films increased because of the decrease of hole concentration. But the optical band gap was almost constant at the value of 1.04eV, The CuInSe$_2$film grown on a Mo/glass substrate had a similar smooth microstructure compared to that on a glass substrate. A solar cell with ZnO/CdS/CuInSe$_2$/Mo structure may be realized based on the above CuInSe$_2$films.