• 제목/요약/키워드: Mo/Si thin film

검색결과 94건 처리시간 0.037초

Mo기판 위에 sputtering 법으로 성장된 Si 박막의 결정화 연구 (The study of crystallization to Si films deposited using a sputtering method on a Mo substrate)

  • 김도영;고재경;박중현;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.36-39
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    • 2002
  • Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method

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EUVL 응용을 위한 Mo/Si 박막 특성 전산모사 (Computer Simulation of Mo/Si Thin Film Characteristics for EUVL Technology)

  • 이영태;정용재
    • 한국세라믹학회지
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    • 제39권8호
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    • pp.807-811
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    • 2002
  • 본 연구에서는 EUVL(Extreme Ultra-Violet Lithography) 공정에서 사용되어지는 Mo/Si 다층박막 마스크 물질의 최적화된 제조공정을 도모하기 위해 Monte Carlo법을 적용한 PVD 공정 시뮬레이터를 사용하여 Mo/Si 다층박막 증착변수에 따른 박막의 형상변화를 분석하였다. 박막의 형상은 가스압력(1∼30 mTorr), 타겟과 기판과의 거리 (1∼30 cm) 및 확산거리(1∼10 nm)에 따라 크게 변함을 알 수 있었으며 가스압력이 낮을수록, 기판과 타겟과의 거리가 멀어질수록 균일한 표면의 박막 형성이 가능할 것으로 예측되었다.

High temperature poly-Si thin film transistors on a molybdenum substrate

  • Kim, Do-Young;Gangopadhyay, Utpal;Park, Joong-Hyun;Ko, Jae-Kyung;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.523-525
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    • 2002
  • The poly-Si thin film can be used in high mobility active matrix liquid-crystal display (AMLCD) and system on panel (SOP). In this paper, poly-Si thin films were grown by novel high temperature process on the molybdenum (Mo) substrate. By applying a high current above 48A on a Mo substrate. We obtained an improved crystalline Si films with the crystallinity over 80%. We exhibit the properties of structural and electrical properties of high temperature poly-Si thin film transistor on the Mo substrates.

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수소 환원 공정과 실리콘 확산 침투 처리 공정을 통한 이규화 몰리브덴 코팅층 형성 (Formation of MoSi2 Layer by Hydrogen Reduction and Si-pack Cementation)

  • 전인목;변종민;김세훈;김진우;김영도
    • 대한금속재료학회지
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    • 제50권9호
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    • pp.653-657
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    • 2012
  • In this study, a molybdenum disilicide ($MoSi_2$) coating process was investigated by hydrogen reduction and Si-pack cementation. At first, the metallic Mo coating was carried out by hydrogen reduction of $MoO_3$ powder at $750^{\circ}C$ for various holding times (1, 2, 3 h) in hydrogen atmosphere. A $4.3{\mu}m$ thick metallic molybdenum thin film was formed at 3 h. $MoSi_2$ was obtained by Si-pack cementation on molybdenum thin film through hydrogen reduction processing. It was carried out using $Si:Al_2O_3:NH_4Cl=5:92:3$ (wt%) packs at $900^{\circ}C$ for various holding times (30, 60, 90 min) in Ar atmosphere. When the holding time was 90 min, a $MoSi_2$ layer was coated successfully and a $15.4{\mu}m$ thickness was observed.

다양한 조건의 플라즈마 원자층 증착법으로 증착된 Mo 금속의 전기적 특성 (Electrical Properties of Molybdenum Metal Deposited by Plasma Enhanced - Atomic Layer Deposition of Variation Condition)

  • 임태완;장효식
    • 한국재료학회지
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    • 제29권11호
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    • pp.715-719
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    • 2019
  • Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). $Mo(CO)_6$ and $H_2$ plasma are used as precursor. $H_2$ plasma is induced between ALD cycles for reduction of $Mo(CO)_6$ and Mo film is deposited on Si substrate at $300^{\circ}C$. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is $176{\mu}{\Omega}{\cdot}cm$ at $Mo(CO)_6$ pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.

CoCrTa/CrX (X=Mo, Si) 자성박막의 보자력에 미치는 Mo와 Si의 영향 (Effects of Mo and Si on the Coercivity of CoCrTa/CrMo and CoCrTa/CrSi Thin Film Media)

  • 조준식;남인탁;홍양기
    • 한국자기학회지
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    • 제9권4호
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    • pp.203-209
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    • 1999
  • CoCrTa/Cr 자성박막의 Cr 하지층에 Mo와 Si을 첨가하여 제조한 박막의 자기적 성질에 미치는 Mo와 Si의 영향에 대하여 조사하였다. 증착시 사용된 장비는 DC magnetron sputtering system이었고, CoCrTa 자성층의 두께는 30.0$\AA$으로 Cr 하지층의 두께는 700$\AA$으로 고정하였으며 기판의 가열온도는 26$0^{\circ}C$이었다. CrMo 하지층의 박막이 순수한 Cr 하지층에 비하여 약 200 Oe의 보자력 증가를 나타내었다. 하지만 Si을 첨가하였을 경우엔 첨가량의 증가에 따라 보자력이 점차 감소하는 것으로 나타났다. CrMo 하지층에서는Mo를 첨가함에 따라 Cr 하지츠의 (200)면의 결정배향성이 증가하였고, Mo를 첨가한 Cr(200)과 CoCrTa(110)의lattice misfit가 Si을 첨가한 경우보다 작았고, 이것이 보자력 증가의 원인이었다.

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CoCr(Mo) 박막의 자기적 특성 및 미세구조에 미치는 Si 하지층의 영향 (The Effect of Si Underlayer on the Magnetic Properties and Crystallographic Orientatation of CoCr(Mo) Thin Film)

  • 이호섭;남인탁
    • 한국자기학회지
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    • 제9권5호
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    • pp.256-262
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    • 1999
  • DC/RF magnetron sputtering system을 이용하여 CoCr 박막 및 CoCrMo 박막의 Si 하지층의 도입에 따른 자기적 특성 및 미세구조의 변화에 대해 살펴보았다. 박막의 자기적 특성을 VSM을 통하여 측정한 결과, 고온에서 증착된 CoCrMo/Si 박막의 경우가 CoCr/Si 박막과는 달리 Si 하지층의 두께가 증가할수록 수직보자력값이 증가하는 것을 알 수 있었으며 AFM과 SEM을 이용한 surface morphology의 변화를 통하여 결정립 미세화와 균일화가 수직보자력을 증진시킴을 알 수 있었다. 또한, 박막의 결정배향성 및 미세구조를 XRD와 SEM을 통하여 관찰한 결과, CoCrMo/Si 박막의 (0002)우선 배향성이 CoCr/Si 박막의 (0002) 우선 배향성보다 상당히 크게 증진된 것을 볼 수 있었으며, SEM의 단면 측정을 통하여 CoCrMo/Si 박막과 CoCr/Si 박막의 기판 표면에서 성장하는 columnar 구조의 발달을 잘 관찰할 수 있었다.

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P형 4H-SiC 기판에 형성된 ZnO 박막/나노선 가스 센서의 300℃에서 CO 가스 감지 특성 (CO Gas Sensing Characteristic of ZnO Thin Film/Nanowire Based on p-type 4H-SiC Substrate at 300℃)

  • 김익주;오병훈;이정호;구상모
    • 한국전기전자재료학회논문지
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    • 제25권2호
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    • pp.91-95
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    • 2012
  • ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

Evaluations of Si based ternary anode materials by using RF/DC magnetron sputtering for lithium ion batteries

  • 황창묵;박종완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.302-303
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    • 2010
  • Generally, the high energy lithium ion batteries depend intimately on the high capacity of electrode materials. For anode materials, the capacity of commercial graphite is unlike to increase much further due to its lower theoretical capacity of 372 mAhg-1. To improve upon graphite-based negative electrode materials for Li-ion rechargeable batteries, alternative anode materials with higher capacity are needed. Therefore, some metal anodes with high theoretic capacity, such as Si, Sn, Ge, Al, and Sb have been studied extensively. This work focuses on ternary Si-M1-M2 composite system, where M1 is Ge that alloys with Li, which has good cyclability and high specific capacity and M2 is Mo that does not alloy with Li. The Si shows the highest gravimetric capacity (up to 4000mAhg-1 for Li21Si5). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. Si thin film is more resistant to fracture than bulk Si because the film is firmly attached to the substrate. Thus, Si film could achieve good cycleability as well as high capacity. To improve the cycle performance of Si, Suzuki et al. prepared two components active (Si)-active(Sn, like Ge) elements film by vacuum deposition, where Sn particles dispersed homogeneously in the Si matrix. This film showed excellent rate capability than pure Si thin film. In this work, second element, Ge shows also high capacity (about 2500mAhg-1 for Li21Ge5) and has good cyclability although it undergoes a large volume change likewise Si. But only Ge does not use the anode due to its costs. Therefore, the electrode should be consisted of moderately Ge contents. Third element, Mo is an element that does not alloys with Li such as Co, Cr, Fe, Mn, Ni, V, Zr. In our previous research work, we have fabricated Si-Mo (active-inactive elements) composite negative electrodes by using RF/DC magnetron sputtering method. The electrodes showed excellent cycle characteristics. The Mo-silicide (inert matrix) dispersed homogeneously in the Si matrix and prevents the active material from aggregating. However, the thicker film than $3\;{\mu}m$ with high Mo contents showed poor cycling performance, which was attributed to the internal stress related to thickness. In order to deal with the large volume expansion of Si anode, great efforts were paid on material design. One of the effective ways is to find suitably three-elements (Si-Ge-Mo) contents. In this study, the Si based composites of 45~65 Si at.% and 23~43 Ge at.%, and 12~32 Mo at.% are evaluated the electrochemical characteristics and cycle performances as an anode. Results from six different compositions of Si-Ge-Mo are presented compared to only the Si and Ge negative electrodes.

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Low-temperature Epitaxial Growth of a Uniform Polycrystalline Si Film with Large Grains on SiO2 Substrate by Al-assisted Crystal Growth

  • Ahn, Kyung Min;Kang, Seung Mo;Moon, Seon Hong;Kwon, HyukSang;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • 제1권2호
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    • pp.103-108
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    • 2013
  • Epitaxial growth of a high-quality thin Si film is essential for the application to low-cost thin-film Si solar cells. A polycrystalline Si film was grown on a $SiO_2$ substrate at $450^{\circ}C$ by a Al-assisted crystal growth process. For the purpose, a thin Al layer was deposited on the $SiO_2$ substrate for Al-assisted crystal growth. However, the epitaxial growth of Si film resulted in a rough surface with humps. Then, we introduced a thin amorphous Si seed layer on the Al film to minimize the initial roughness of Si film. With the help of the Si seed layer, the surface of the epitaxial Si film was smooth and the crystallinity of the Si film was much improved. The grain size of the $1.5-{\mu}m$-thick Si film was as large as 1 mm. The Al content in the Si film was 3.7% and the hole concentration was estimated to be $3{\times}10^{17}/cm^3$, which was one order of magnitude higher than desirable value for Si base layer. The results suggest that Al-doped Si layer could be use as a seed layer for additional epitaxial growth of intrinsic or boron-doped Si layer because the Al-doped Si layer has large grains.