• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.5
• /
• pp.378-383
• /
• 1998

Microstructure and additive effect of Lead Zirconate-Titanate(PZT) ceramics prepared by molten salt synthesis method with additives $Nb_2O_5, Fe_2O_3$ and MnO were investigated.The grain PZT ceramics ws decreased with the increase $Nb^{5+} or Fe^{3+}$ while increased with the increase $Mn^{2+}$ addition. The relative resistivity of PZT ceramics was increased with the increase $Mn^{5+}$ addition, while decreased with the increase $Mn^{2+}$ addition. And the dielectric and the piezoelectric constant of PZT ceramics showed 2,100 and 342pC/N at $Mn^{5+}$ addition of 0.75 mol%, respectively.

• Korean Journal of Materials Research
• /
• v.22 no.8
• /
• pp.385-389
• /
• 2012

Significant improvements in the switching voltage distribution are required for the development of unipolar resistive memory devices using $MnO_x$ thin films. The $V_{set}$ of the as-grown $MnO_x$ film ranged from 1 to 6.2 V, whereas the $V_{set}$ of the oxygen-annealed film ranged from 2.3 to 3 V. An excess of oxygen in an $MnO_x$ film leads to an increase in $Mn^{4+}$ content at the $MnO_x$ film surface with a subsequent change in the $Mn^{4+}/Mn^{3+}$ ratio at the surface. This was attributed to the change in $Mn^{4+}/Mn^{3+}$ ratios at the $MnO_x$ surface and to grain growth. Oxygen annealing is a possible solution for improving the switching voltage distribution of $MnO_x$ thin films. In addition, crystalline $MnO_x$ can help stabilize the $V_{set}$ and $V_{reset}$ distribution in memory switching in a Ti/$MnO_x$/Pt structure. The improved uniformity was attributed not only to the change of the crystallinity but also to the redox reaction at the interface between Ti and $MnO_x$.

• Journal of the Korean Ceramic Society
• /
• v.34 no.2
• /
• pp.123-130
• /
• 1997

In this study, (Sr.Pb.Ca)TiO3-Bi2O3.3TiO2(SPCT) systems were investigated to develop a new material which has a high dielectric constant, a low dielectric loss and a small TCC(Temperature Coefficient of Capa-citance), and are suitable for high voltage applications as a function of the additions of Bi2O3.3TiO2 from 5 mol.% to 9 mol.%. The result obtained from our investigation showed that up to 6 mol.% Bi2O3.3TiO ad-dition the dielectric constant increased and it deteriorated at higher concentrations with increasing amount of the acicular grains. As a result of some dopants (SiO2, Nb2O3, MnO2) addition to SPCT, the specimens with MnO2 showed good dielectric properties. The dielectric constant decreased, but the TCC was improved with the addition of MnO2 from 0.15 wt.% to 0.45 wt. %.

• Journal of Hydrogen and New Energy
• /
• v.17 no.4
• /
• pp.353-361
• /
• 2006

As one of the thermochemical water splitting hydrogen production cycles, which could be operated at the lower temperature below 1200 K, we investigated the feasibility of the cyclic operation of Ispra Mark 2 cycle with the addition of $ZrO_2$. The cycle is theoretically composed of three reaction steps; (1) 1st step($2MnO_2{\rightarrow}Mn_2O_3+0.5O_2$), (2) 2nd step($Mn_2O_3+4NaOH{\rightarrow}2Na_2O{\cdot}MnO_2+H_2+H_2O$) and (3) 3rd step($2Na_2O{\cdot}MnO_2H_2O{\rightarrow}4NaOH+2MnO_2$). From the TPR tests, the temperature ranges for $O_2$ production in 1st step and $H_2$ production in 2nd step were $550{\sim}750^{\circ}C$ and $650{\sim}750^{\circ}C$, respectively. In $MnO_2/Mn_2O_3/NaOH$ system, the formation of molten products due to the reaction between manganese oxides and NaOH were greatly decreased with the addition of $ZrO_2$. In addition, the results of a cyclic test were discussed with the viewpoint of $H_2$ production amounts and the feasibility of the process improvement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.05a
• /
• pp.63-67
• /
• 1996

In this paper, effect of MnO$_2$ addition(0, 0.1, 0.2, 0.3, 0.5wt%) on the microstructure, dielectric and piezoelectric properties of [xPMW - (0.15-x) PNN] - [yPT-(0.85-y)PZ] (x=0, 0.01, 0.02, 0.03, 0.05, y = 0.35, 0.40, ().425, 0.45, 0.5) were investigated. When Ti/Zr ratio was 1.0, dielectric and piezoelectric properties were highest value. With PMW 2mol%, dielectric constant, dielectric constant (d$\_$33/, d$\_$31/) and electromechanical coupling factor (kp, k$\_$31/) were highest values of 1995, 479, 186(x10$\^$-12/C/N), 0.61, 0.36, respectively. With the addition of MnO$_2$, dielectric constant, electromechanical coupling factor (kp, k$\_$31/) were decreased, but with 0.3wt% MnO$_2$, eletromechanical coupling factor was highest value of 0.63. With the addition of MnO$_2$, mechanical quality(Q$\_$m/ was increased.

• Journal of the Korean Ceramic Society
• /
• v.30 no.9
• /
• pp.761-767
• /
• 1993

Electrical and mechanical properties of Pb(Mg, Te, Mn, Nb)O3-PZT ceramics are investigated as a function of CeO2 addition (0 to 0.3wt%), and the output characteristics of piezoelectric transformer are also presented. The grain size decreased and the shapes of particles were more uniform with the addition of CeO2. The coercive electric field(9500V/cm), mechanical quality factor (2500) and bend strength (1065kg/$\textrm{cm}^2$) were improved by addition of CeO2 0.2wt%. After repetition of a number of stress cycles, the degradation of k33 was not found in this sample. The voltage step-up ratio (Vdc/Vrms) of piezoelectric ceramic transformer (half wavevoltage doubler, load resistor 100M.ohm) was about 950 in a linear region, its value was relatively higher than other materials.

• Journal of the Korean Ceramic Society
• /
• v.32 no.9
• /
• pp.1033-1039
• /
• 1995

The current experiment has quantitatively investigated the effect of the content of CaO and SiO2 on the microstructure, density, electrical resistivity, power loss and initial permeability of manganese zinc ferrites. The density increased initially with CaO and SiO2 content and the further addition showed an adverse effect. The excess addition of CaO and SiO2 developed a discontinuous grain growth with numerous pores inside grains and lowered the electrical resistivity. The initial permeability decreased with increasing the content of SiO2. The samples with relatively low power loss showed that half of the total loss at 10$0^{\circ}C$, 100 kHz and 2000 Gauss was due to the eddy current loss.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.436-439
• /
• 2000

Change of dielectric loss of use in high relative permitivity capacitor BaTiO$_3$ ceramic depends on Mn doping have been investigated. The powders used in this study were commercial BaTiO$_3$, TiO$_2$and, MnCO$_3$. Sample was fabricated by conventional ceramic process. The quantity of Mn was changed gradually from 0.lmol% to 10mo1%. The sintering densities were reduced with increasing amount of MnCO$_3$. This result is because of increase of low density second phase BaMnO$_3$. When the samples were doped by over 0.2mol% of MnCO$_3$, average grain sizes were enlarge to several tens ${\mu}{\textrm}{m}$. The dielectric losses were reduced by Mn doping to lmol% but, increased from lmol% to 10mo1% gradually.

• Resources Recycling
• /
• v.21 no.3
• /
• pp.21-27
• /
• 2012

In order to make high-purity ferro-manganese from $Mn_3O_4$ dust, the application of aluminothermy process to the reduction of $Mn_3O_4$ dust was investigated in previous work. The result showed the fact that can be obtained high purity ferro-manganese which have over about 93% of manganese content and lower impurities such as C, P, S than those of KS D3712 specification. The addition of silicon powder instead of aluminum powder was investigated as reductant in the thermite reaction process of $Mn_3O_4$ dust in this work because its production cost is lower than that of aluminum powder. In case of addition of silicon powder only as reductant, the experimental result showed the unstable ignition and no thermite reaction of mixture, but in case of simultaneous addition of silicon and aluminum powders as reductant, showed the fact that can be obtained high purity ferro-manganese which have much low content of impurities such as C, P, S component.

• Journal of the Korean Ceramic Society
• /
• v.30 no.1
• /
• pp.25-33
• /
• 1993

Formation reaction of Mn-Zn ferrite depending on various synthetic conditions of wet process was investigated using FeCl2.nH2O(n≒4), MnCl2.4H2O, ZnCl2 as starting materials. A stable intermediate precipitate was formed by the addition of H2O2. And the precipitate was hard to transform to spinel phase of Mn-Zn Fe2O4. Single phase of Mn-Zn Fe2O4 spinel was obtained above 8$0^{\circ}C$ reaction temperature. The powder had spherical particle shape and 0.02~0.05${\mu}{\textrm}{m}$ particle size. Fe(OH)2 solid solution, -FeO(OH) solid solution, -FeOOH, Mn-Zn Fe2O4 spinel were formed with air flow rate 180$\ell$/hr. However, single phase of Mn-Zn Fe2O4 spinel with cubic particle shape and 0.1~0.2${\mu}{\textrm}{m}$ particle size was formed with synthetic conditions of 8$0^{\circ}C$ and 90 munutes. The particle shape of the -FeOOH was needle-like.