• Korean Journal of Materials Research
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• v.16 no.6
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• pp.394-399
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• 2006

Ferroelectric $HoMnO_3$ thin films were deposited on the Si(100) substrate at $700^{\circ}C$ for 2 hrs by metalorganic chemical vapor deposition (MOCVD) and post-annealed at 850oC by rapid thermal process (RTP). Electrical properties and crystalline phases of $HoMnO_3$ thin films were investigated as a function of postannealing time. Single phase of hexagonal symmetry with c-axis preferred orientation was obtained from $HoMnO_3$ thin films post-annealed at $850^{\circ}C$ for 5 min, while the c-axis preferred orientation was decreased with the increase of post-annealing time, and the thin films post-annealed at $850^{\circ}C$ for 15 min showed the mixture phases of hexagonal and orthorhombic symmetry. P-E (Polarization-Electric field) hysteresis loop of ferroelectric $HoMnO_3$ thin films was observed only for the single phase of hexagonal symmetry, but that was not observed for the mixture phases of the hexagonal and orthorhombic symmetry, which was discussed with the bond valence of Mn ion of crystalline phase. Leakage current density was dependent on the microstructure of thin films as well as the change of valence of Mn ion.

• Journal of Magnetics
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• v.8 no.4
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• pp.149-152
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• 2003

The electronic structure of Mn12-Ac molecular magnet has been investigated using synchrotron radiation. The valence-band photoemission spectroscopy (PES) measurement reveals that Mn 3d states are located near the top of the valence band. The trend in the measured valence-band PES spectra is found to be consistent with that in the calculated local density of states. The Mn 2p x-ray absorption spectroscopy (XAS) measurement provides evidence for the Mn$^{3+}$-Mn$^{4+}$ mixed-valent states.

• Journal of the Korean Chemical Society
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• v.23 no.4
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• pp.198-205
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• 1979

A valence bond method of calculation of the dipole moments for octahedral $(M(III)0_3S_3)$ type complexes are developed, using $d^2sp^3 $hybrid orbitals of the central metal ions and the single basis set orbital of ligands. (M (III) =V (III), Cr (III), Mn (III), Fe (III), Co (III), Ru (III), Rh (III) and OS (III)). In this method the mixing coefficient of the valence basis sets for the central metal ion with the appropriate ligand orbitals is not required to be the same, differently from the molecular orbital method. The valence bond method is much more easier to calculate the dipole moments for octahedral complexes than the approximate molecular orbital method and the calculated results are also in the range of the experimental vaues.

• International Journal of Internet, Broadcasting and Communication
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• v.7 no.1
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• pp.75-92
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• 2015

This paper presents the application of the bond valence method to estimate the valence charge distribution in several perovskite systems: $La_{{\tilde{1}}x}Pb_xMnO_3$ (x=0.1-0.5), $La_{0.6}Sr_{0.{\tilde{4}}x}Ti_xMnO_3$ (x=0.0-0.25) and $La_{{\tilde{1}}x}Sr_xCoO_3$ (x=0.1-0.5); the reviewing of their crystal structures is also incorporated. The results showed the failure of the elastic bonding mechanism in all studied systems and revealed the general deficit of the valence charge in their unit cells. This valence deficit was not associated with the structural defects and was not equally localized in all coordination spheres. As the content of substitution increased, the charge deficit declined systematically from balanced level, signifying the transfer of valence charge from the ${\tilde{B}}O_6$ to ${\tilde{A}}O_{12}$ spheres. This transfer depended on the valence deviation of spheres and the average reached near 2 electron per unit cell. The possible impact of the limitted accuracy of the available structural data on the bond valence results has also been considered.

• Bulletin of the Korean Chemical Society
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• v.22 no.1
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• pp.103-106
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• 2001

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.171-172
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• 2005

PSNZT계 압전 세라믹스는 압전 특성을 개량하고, 여러 가지 응용 분야의 요구를 만족할 특성을 얻기 위해 Mn을 포함하는 첨가물에 관한 연구를 하였다. Mn을 포함하는 산화물은 기계적 품질계수($Q_m$)를 높이는 강화제로 널리 활용되고 있으며, $Mn^{4+}$를 갖는 $MnO_2$가 가장 많이 사용되고 있다. 산화물에서 Mn 전자가는 여러 상태 인데, 이런 전자가의 변화가 압전 특성에 미치는 영향을 조사하였다. Mn 전자가에 따라서 소결체의 미세구조는 $MnCO_3$와 $Mn_3O_4$경우 입자크기가 10${\mu}m$정도였으며, $Mn_2O_3$와 $MnO_2$의 입자크기는 $1\sim5{\mu}m$정도로 불규칙하였다. 전반적으로 소결체는 밀도가 $7.75g/cm^2$이상이었고, 치밀하였다. $MnCO_3$경우 전기기계 결합계수는 56%이고, $MnO_2$경우 기계적 품질계수는 2000이상이었다.

• Nuclear Engineering and Technology
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• v.12 no.2
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• pp.99-105
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• 1980

The distribution of $^{55}$ Mn and $^{38}$ Cl recoil species following radiative neutron capture in permanganates, chlorates and perchlorates has been investigated by using ion-exchange chromatography method. The whole of the $^{55}$ Mn radioactivity in permanganates appeared in two valence states, the $^{38}$ Cl radioactivity in chlorates in two valence states and also the $^{38}$ Cl radioactivity in perchlorates in three valence states. Recoil energy was calculated. The internal conversion of $^{38}$ Cl isomer transition affects the retention value. The greater the radii of the cation, the higher is the probability of the recoil atom breaking through the secondary cage. In ammonium salt, the ammonium ion behaves as a reducing agent. Crystal structures with their greater free space have shown low retention.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.12-15
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• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.26-29
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• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• Current Applied Physics
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• v.18 no.11
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• pp.1190-1195
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• 2018

By employing soft X-ray magnetic circular dichroism (XMCD), soft X-ray absorption spectroscopy (XAS), and photoemission spectroscopy (PES), we have investigated the electronic structure of the candidate zero-moment half-metallic $Mn_3Ga$. We have studied the ball-milled and annealed $Mn_3Ga$ powder samples that exhibit nearly zero magnetization. Mn 2p XAS revealed that Mn ions in $Mn_3Ga$ are nearly divalent for both of the Mn ions having the locally octahedral symmetry and those having the locally tetrahedral symmetry. The measured Mn 2p XMCD spectrum of $Mn_3Ga$ is very similar to that of ferrimagnetic $MnFe_2O_4$ having divalent Mn ions. The sum-rule analysis of the Mn 2p XMCD spectrum shows that both the spin and orbital magnetic moments of Mn ions in $Mn_3Ga$ are negligibly small, in agreement with the nearly compensated-ferrimagnetic ground state of $Mn_3Ga$. The valence-band PES spectrum of $Mn_3Ga$ agrees well with the calculated density of states, supporting the half-metallic electronic structure of $Mn_3Ga$.