• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.197-206
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• 1999

The stochiometric mixture of evaporating materials for the $AgInSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the $AgInSe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $C_0$ were 6.092 $\AA$ and 11.688 $\AA$, respectively. To obtain the single crystal thin films of AgInSe$_2$, the mixed crystal was deposited on thoroughly etched semi-insulator GaAs(100) substrate by HWE system. The source and substrate temperature were fixed to $610^{\circ}C$ and $450^{\circ}C$ respectively, and the thickness of the single thin films was obtained to 3.8 $\mu\textrm{m}$. The crystallization of single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray dirrfaction (DCXD). The Hall effect was measured by the method of van der Pauw and carrier density and mobility dependence on temperature were studied. The carrier density and mobility of $AgInSe_2$single crystal thin films deduced from Hall data are $9.58{\times}10^{22} electron/m^3,\; 3.42{\times}10^{-2}m^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInSe_2$single crystal thin film, the spin orbit coupling $\Delta$So and the crystal field splitting $\Delta$Cr were obtained to 0.29 eV and 0.12 eV at 20 K respectively. From PL peaks measured at 20 K, 881.1 nm (1.4071 eV) and 882.4 nm (1.4051 eV) mean $E_x^U$ the upper polariton and $E_x^L$ the lower polariton of the free exciton $(E_x)$, also 884.1 nm (1.402 eV) express $I_2 peak of donor-bound exciton emission and 885.9 nm (1.3995 Ev) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 887.5 nm (1.3970 eV) was analyzed to be PL peak due to DAP.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.138-147
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• 2001

The stochiometric mixtures mixture of evaporating materials for the $ZnIn_{2}S_{4}$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_{2}S_{4}$ single crystal thin film, $ZnIn_{2}S_{4}$ mixed crystal was deposited on throughly etched semi-insulting GaAs(100) in the Hot Wall Epitaxy(HWE) system. The sourceand substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_{2}S_{4}$ single crystal thin film was about 0.5$\mu\textrm{m}$/hr. The crystalline structure of $ZnIn_{2}S_{4}$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction (DCXD) measurement. The carrier density and mobility of $ZnIn_{2}S_{4}$ single crystal thin film measured from Hal effect by van der Pauw method are $8.51{\times}10^{17}{\textrm}{cm}^{-3}$, 291$\textrm{cm}^2$/V.s at $293^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $ZnIn_{2}S_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal filed splitting DCr were 0.0148eV and 0.1678 eV at $10^{\circ}$K, respectively. From the photoluminescence measurement of $ZnIn_{2}S_{4}$ single crystal thin film, we observed free excition($E_{X}$) typically observed only in high quality crystal and neutral donor bound exicton ($D^{\circ}$, X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9meV and 26meV, respectively. The activation energy of impurity measured by Haynes rule was 130meV.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.16 no.4
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• pp.180-195
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• 2011

A balanced trophic model for Sinjido marine ecosystem was constructed using ECOPATH model and data obtained 1994 in the region. The model integrates available information on biomass and food spectrum, and analyses ecosystem properties, dynamics of the main species populations and the key trophic pathways of the system, and then compares these results with those of other marine environments. The model comprises 17 groups of benthic algae, phytoplankton, zooplankton, gastropoda, polychaeta, bivalvia, echinodermata, crustacean, cephalopoda, goby, flatfish, rays and skates, croaker, blenny, conger, flatheads, and detritus. The model shows trophic levels of 1.0~4.0 from primary producers and detritus to top predator as flathead group. The model estimates total biomass(B) of 0.1 $kgWW/m^2$, total net primary production(PP) of 1.6 $kgWW/m^2/yr$, total system throughput(TST) of 3.4 $kgWW/m^2/yr$ and TST's components of consumption 7%, exports 43%, respiratory flows 4% and flows into detritus 46%. The model also calculates PP/TR of 0.012, PP/B of 0.015, omnivory index(OI) of 0.12, Fin's cycling index(FCI) of 0.7%, Fin's mean path length(MPL) of2.11, ascendancy(A) of 4.1 $kgWW/m^2/yr$ bits, development capacity(C) of 8.2 $kgWW/m^2/yr$ bits and A/C of 51%. In particular this study focuses the analysis of mixed trophic impacts and describes the indirect impact of a groupb upon another through mediating one based on 4 types. A large proportion of total export in TST means higher exchange rate in the study region than in semi enclosed basins, which seems by strong tidal currents along the channels between islands, called Sinjido, Choyakdo and Saengildo. Among ecosystem theory and cycling indices, B, TST, PP/TR, FCI, MPL and OI are shown low, indicating the system is not fully mature according to Odum's theory. Additionally, high A/C reveals the maximum capacity of the region is small. To sum up, the study region has high exports of trophic flow and low capacity to develop, and reaches a development stage in the moment. This is a pilot research applied to the Sinjido in terms of trophic flow and food web system such that it may be helpful for comparison and management of the ecosystem in the future.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.419-426
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• 2001

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at$ 630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is 2.1$\mu\textrm{m}$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of AgGaSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89\Times10^{17}$ cm$^{-3}$ , 129cm2/V.s at 293K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the AgGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting $$\Delta$S_{o}$ and the crystal field splitting $\Delta$C$_{r}$, were 0.1762eV and 0.2474eV at 10K, respectively. From the photoluminescence measurement of AgGaSe$_2$ single crystal thin film, we observed free excision (EX) observable only in high quality crystal and neutral bound exciton ($D^{o}$ , X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8mev and 14.1meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.ion energy of impurity was 141 meV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.425-433
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• 2000

The stochiometric mix of evaporating materials for the $CuGaTe_2$single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0 and c_0$ were 6.025 $\AA$ and 11.931 $\AA$, respectively. To obtain the single crystal thin films, $CuGaTe_2$mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is 2.1$\mu\textrm{m}$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of $CuGaTe_2$single crystal thin films deduced from Hall data are $8.72{\times}10{23}$개 $\textrm m^3$, $3.42{\times}10^{-2}$ $\textrm m^2$/V.s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuGaTe_2$single crystal thin film, we have found that the values of spin orbit coupling $\Delta$s.o and the crystal field splitting $\Delta$cr were 0.0791 eV and 0.2463 eV at 10 K, respectively. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470 eV and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be 0.0490 eV, 0.0558 eV, respectively.