• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.291-292
• /
• 2008

This study used EPR's sheet and cable as a specimen, and measured residual voltage depending on the induced voltage, thickness of the sheet, and shape of the sheet and cable. The results of the study lead to the following conclusion: 1) The residual voltage increased in proportion to the induced voltage as time increases; 2) The residual voltage of the basic mixed specimen and practical mixed specimen increased as time increased; 3) The peak of the cable appeared earlier than that of the sheet in both of the basic mixed specimen and practical mixed specimen.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.1
• /
• pp.23-29
• /
• 2005

This paper presents the characteristics of leakage currents flowing through ZinC Oxide(ZnO) surge arrester blocks under mixed direct and 60 Hz alternating voltages. A mixed voltage, in which an alternating voltage is superimposed upon a direct voltage, appears on the HVDC system network. The mixed direct and alternating voltage generator with a peak open-circuit of 10 kV was designed and fabricated. The leakage currents and V-I curves for the fine and used ZnO surge arrester blocks were measured as a function of the voltage ratio k, where the voltage ratio k is defined as the ratio of the peak of alternating voltage to the peak of the mixed voltages. The resistive component in the leakage current in the low conduction region is significantly increased with increasing the voltage ratio k. The V-I characteristic curves for the mixed voltages lies between the direct and alternating characteristics, and the cross-over phenomenon in the high conduction region was appeared.

• Transactions of the Korean hydrogen and new energy society
• /
• v.32 no.6
• /
• pp.506-513
• /
• 2021

The use of fossil fuels is a major contributor to the increase atmospheric greenhouse gas emissions. As such problems arise, interest in new and renewable energy devices, particularly fuel cells, is greatly increasing. In this study, various characteristics of mixed strains were observed in wastewater collected by the Jeonju Environment Office to investigate the effects of microorganisms on voltage generation and voltage generation of substrates, electrode materials, electrons, electron transport media, and ash microbial fuel cells. As a result of separately measuring the voltage generated during inoculation, the inoculation voltage of Escherichia coli K12 (E. coli K12) was 0.45 V, and the maximum inoculation voltage of the mixed strain was 1.2 V. Thereafter, voltage values were collected using a digital multimeter and the amount of voltage generated over time was measured. In the case of E. coli K12, the maximum voltage reached 0.45 V, and the cell voltage was maintained above 0.23 V for 140 hours. In contrast, for the mixed strain, the maximum voltage reached 1.2 V and the voltage was slowly decreased to 0.97 V. In addition, the degree of microbial adsorption to the electrod surface after the inoculation test was confirmed using a scanning electron microscope. Therefore, these results showed the possibility of purifying pollutants at the same time as power generation through the production of hydrogen ions using microorganisms and wastewater.

• The Transactions of the Korean Institute of Electrical Engineers B
• /
• v.55 no.9
• /
• pp.472-477
• /
• 2006

This paper presents a new voltage/current mixed method for driving synchronous rectifiers (SR) adapted to the flyback topology. The synchronous rectifier driven by the proposed voltage/current mixed method can operate at a wide load range with high efficiency. The gate voltage of MOSFET in the synchronous rectifier can be easily controlled by changing the ratio of resistors, irrespective of a line and load fluctuation. A 200W (12V/17A) prototype converter was built and an efficiency of 93% was measured at 10A load current.

• Journal of the Korean Society of Safety
• /
• v.6 no.2
• /
• pp.15-20
• /
• 1991

In this paper, we have investigated the effect of organic additives and prestressed D C. voltage on the impulse tree initiation in low density polyethylene. The five klnds of organic compounds was selected for the purpose of inhibiting tree initiation and 10 wt % of each additive was mixed in low density polyethylene. The positive or negative impulse voltage was applied after prestressed D.C. voltage was applied in order to investigate the effect of the space charge influenced on tree initiation. The lengths of tree initiation in case of belng same polarity between prestressed D.C. voltage and impulse voltage were longer than those in case of being different polarity between prestressed D.C. voltage and impulse voltage. When the polarity prestressed D.C. voltage was the different plarity of impulse voltage, the length of tree initiation increased with increasing the prestressed D.C. voltage and decreasing the rest time Among the organic additives used in this paper, the m-cresol can be shown to be the most effective inhibiter to tree initiation.

• Journal of Korean Vacuum Science & Technology
• /
• v.4 no.4
• /
• pp.112-121
• /
• 2000

The paper investigates electrical discharge properties in neon gas mixed with xenon. The breakdown temperature T$\sub$b/ and voltage V$\sub$b/ are obtained in terms of the gas mixture ratio X. It is shown that the breakdown voltage decreases, reaches the minimum value at X=0.02 and then increases again, as the mixture ratio X increases from zero to unity. Therefore, mixing the neon gas with a few percent of xenon is the most beneficial to reduce the breakdown voltage. Plasma density at breakdown in neon gas mixed with xenon is described in terms of the gas mixture ratio. The optimum value of mixture ratio for highest plasma density is found to be Xm=0.03. A preliminary experiment of AC-PDP is carried out for neon gas mixed with a few percent of xenon to verify some of the theoretical models. The experimental data agree qualitatively well with theoretical predictions.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.8
• /
• pp.24-33
• /
• 2002

For mixed signal circuits that integrate both analog and digital blocks onto the same chip, testing the mixed circuits has become the bottleneck. Since most of mixed signal circuits are functionally tested, mixed signal testing needs expensive automatic test equipments for test input generation and response acquisition. In this paper, a new efficient BIST is developed which can be used for mixed signal circuits. In the new BIST, only faults on embedded resistances, capacitances and its combinations are considered. To guarantee the quality of chips, the new BIST performs both voltage testing and phase testing. Using these two testing modes, all the faults are detected. In order to support this technique, the voltage detector and the phase detector are developed. Experimental results prove the efficiency of the new BIST.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.21 no.10
• /
• pp.66-72
• /
• 2007

This paper describes the characteristics of power loss and leakage currents flowing through new and used 18[kV] zinc oxide(ZnO) surge arrester under the mixed DC and AC voltages. The mixed DC and AC voltage generator of 50[kV] peak was designed and fabricated. The I-V curves of ZnO surge arrester were measured as a function of the voltage ratio K. The I-V curves under the mixed DC and AC voltages lay between the pure DC and AC characteristics, and the cross-over phenomenon in both I-V curves and R-V curves was observed at the low current region. As a result, the increase of DC component in the mixed voltages causes the increase of resistive component of total leakage current of ZnO surge arrester. Also, in the case of same applied voltage, the leakage current flowing through the used ZnO surge arrester was higher than that of the new ZnO surge arrester.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.40 no.3
• /
• pp.135-144
• /
• 2003

This work proposes on-chip full CMOS current and voltage references for high-speed mixed-mode circuits. The proposed current reference circuit uses a digital-domain calibration method instead of a conventional analog calibration to obtain accurate current values. The proposed voltage reference employs internal reference voltage drivers to minimize the high-frequency noise from the output stages of high-speed mixed-mode circuits. The reference voltage drivers adopt low power op amps and small- sized on-chip capacitors for low power consumption and small chip area. The proposed references are designed, laid out, and fabricated in a 0.18 um n-well CMOS process and the active chip area is 250 um x 200 um. The measured results show the reference circuits have the power supply variation of 2.59 %/V and the temperature coefficient of 48 ppm/$^{\circ}C$ E.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.2
• /
• pp.93-99
• /
• 1996

In this work BN thin films were deposited on Si substrate by R. F. sputtering method at $200^{\circ}C$ and in Ar + $N_2$ mixed gas atmosphere. In order to investigate the effect of ion bombardment on substrate for c-BN bonding, substrate bias voltage was applied. The optimum substrate bias voltage for c-BN bonding was determined by FTIR analysis on specimens which were deposited with various bias voltages. Then BN thin film was deposited with this optimum condition and its phase, morphology, chemical composition, and refractive index were compared with those of BN film which was deposited without bias voltage. FTIR results showed that BN films deposited with substrate bias voltage were composed of mixed phases of c-BN and h-BN, while those deposited without bias voltage were h-BN only. When pure Ar gas was used for sputtering gas, BN films were delaminated easily from substrate in air, while when 10% $N_2$ gas was added to the sputtering gas, although c-BN specific infrared peak was reduced, delamination did not occur. GXRD and TEM results showed that BN films were amorphous phases regardless of substrate bias voltage, and AES results showed that the chemical compositions of B/N were about 1.7~1.8. The refractive index of BN film deposited with bias voltage was higher than that without bias voltage. The reason is believed to be the existence of c-BN bonding in BN film and the higher density of film that deposited with the substrate bias voltage.