• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.96-113
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• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.757-761
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• 2017

The computational fourier-transform moire (CFTM) method has been briefly explained and this method was used to perform strain analysis of a misfit dislocation in a strained $Si/Si_{0.55}Ge_{0.45}$ layer. An essential advantage of the CFTM method is that it does not require unwrapping, such that errors due to improper unwrapping can be excluded. The analysis results revealed that the Si layer was grown with tensile stress on $Si_{0.55}Ge_{0.45}$ and lattice constant of the Si layer along the growth direction was 1.9% smaller than that of $Si_{0.55}Ge_{0.45}$. On the other hand, strain of the misfit dislocation in the strained $Si/Si_{0.55}Ge_{0.45}$ layer was maximum at the dislocation core due to an extra half-plane and the $e_{xx}$ and $e_{yy}$ values were positive and negative, respectively, along the direction of a burgers vector.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.4
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• pp.187-194
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• 2007

A transmission electron microscope (TEM) investigation has been performed on the precipitation of $L2_1$-type $Ni_2AlTi$ phase in B2-ordered NiAl system. The hardness after solution treatment is high in NiAl-Ti alloys suggesting the large contribution of solid solution strengthening in this alloy system. However, the amount of age hardening is not large as compared to the large microstructural variations during aging. At the beginning of aging, the $L2_1$-type $Ni_2AlTi$ precipitates keep a lattice coherency with the NiAl matrix. By longer periods of aging $Ni_2AlTi$ precipitates lose their coherency and change their morphology to the globular ones surrounded by misfit dislocations. Misfit dislocations, which are observed on {100} planes of H-precipitates have the Burgers vector of a <100> with a pure edge type. The lattice misfits of NiAl-$Ni_2AlTi$ system is estimated from the spacings of misfit dislocations to be 1.1% at 1273 K. The lattice misfits decrease with increasing aging temperature in this system.

• Journal of Powder Materials
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• v.2 no.3
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• pp.247-254
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• 1995

The theoretical optimum quaternary composition for improving the thermal stability of Al-Ti alloy was recently proposed. On the basis of the suggestion, quaternary Al-Ti-V-Zr alloy powders corresponding to the optimum compositions, one of which belongs to the region of the smallest lattice misfit between the matrix and the precipitates and the other belongs to the region of the smallest rate constant of coarsening, were prepared by mechanical alloying and the powders were vacuum-hot-pressed at $430^{\circ}C$ under the pressure of 800 MPa. The thermal stability of the specimens was evaluated by hardness testing after isothermal aging up to 400 hrs at various temperatures. The decrease of hardness of Al-Ti-V-Zr alloys was smaller than that of Al-Ti alloys. It was considered to be due to the formation of $Al_3Zr$ type and$Al_3Ti$ type quaternary precipitates having smaller lattice misfit than $Al_3Ti$ and the increase of volume fraction of All0v during the isothermal aging. The quaternary Al-Ti-V-Zr alloys corresponding to the smallest lattice misfit showed the most improved thermal stablilty and it was mainly considered to be due to the formation of All0v.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.420-424
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• 2007

Precipitation behavior has been studied in NiTi-based ordered alloy using transmission electron microscopy. The hardness after solution treatment is high in NiTi alloy suggesting the large contribution of solid solution strengthening in this alloy system. However, the amount of age hardening is not large as compared to the large microstructural variations during aging. At the beginning of aging, the $L2_1-type$ $Ni_2AlTi$ precipitates keep a lattice coherency with the NiTi matrix. By longer periods of aging $Ni_2AlTi$ precipitates lose their coherency and change their morphology to the globular ones surrounded by misfit dislocations. Misfit dislocations, which are observed on {100} planes of H-precipitates have the Burgers vector of a <100> with a pure edge type. The lattice misfits of $NiTi-Ni_2AlTi$ system is estimated from the spacings of misfit dislocations to be 1.3% at 1273 K. The lattice misfits decrease with increasing aging temperature in this system.

• 한국지구물리탐사학회:학술대회논문집
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• 2007.06a
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• pp.329-336
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• 2007

For scaling of the gradient of misfit function, we develop a new pseudo-Hessian matrix constructed by combining amplitude field and pseudo-Hessian matrix. Since pseudo- Hessian matrix neglects the calculation of the zero-lag auto-correlation of impulse responses in the approximate Hessian matrix, the pseudo-Hessian matrix has a limitation to scale the gradient of misfit function compared to the approximate Hessian matrix. To validate the new pseudo- Hessian matrix, we perform frequency-domain elastic full waveform inversion using this Hessian matrix. By synthetic experiments, we show that the new pseudo-Hessian matrix can give better convergence to the true model than the old one does. Furthermore, since the amplitude fields are intrinsically obtained in forward modeling procedure, we do not have to pay any extra cost to compute the new pseudo-Hessian. We think that the new pseudo-Hessian matrix can be used as an alternative of the approximate Hessian matrix of the Gauss-Newton method.

• Korean Journal of Materials Research
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• v.19 no.12
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• pp.699-702
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• 2009

Due to the importance of the SiGe/Si heterostructure in the fields of thermoelectric and electronic applications, SiGe/Si heterostructures have been extensively investigated. For practical applications, thermal stability of the heterostructure during the thermoelectric power generation or fabrication process of electronic devices is of great concern. In this work, we focused on the effect of thermal annealing on the defect configuration in the SiGe/Si heterostructure. The formation mechanism of planar defects in an annealed SiGe/Si heterostructure was investigated by transmission electron microscopy. Due to the interdiffusion of Si and Ge, interface migration phenomena were observed in annealed heterostructures. Because of the strain gradient in the migrated region between the original interface and the migrated interface, the glide of misfit dislocation was observed in the region and planar defects were produced by the interaction of the gliding misfit dislocations. The planar defects were confined to the migrated region, and dislocation pileup by strain gradient was the origin of the confinement of the planar defect.

• Journal of Korean language education
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• v.28 no.1
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• pp.173-196
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• 2017

Writing is a subjective and performative activity. Writing ability has multi-facets and compoundness. To understand the examinees's writing ability accurately and provide effective writing scores, raters first ought to have the competency regarding assessment. Therefore, this study is significant as a fundamental research about rater's characteristics on the TOPIK writing assessment. 150 scripts of the 47th TOPIK examinees were selected randomly, and were further rated independently by 20 raters. The many-facet Rasch model was used to generate individualized feedback reports on each rater's relative severity and consistency with respect to particular categories of the rating scale. This study was analyzed using the FACETS ver 3.71.4 program. Overfit and misfit raters showed many difficulties for noticing the difference between assessment factors and interpreting the criteria. Writing raters appear to have much confusion when interpreting the assessment criteria, and especially, overfit and misfit teachers interpret the criteria arbitrarily. The main reason of overfit and misfit is the confusion about assessment factors and criteria in finding basis for scoring. Therefore, there needs to be more training and research is needed for raters based on this type of writing assessment characteristics. This study is recognized significantly in that it collectively examined writing assessment characteristics of writing raters, and visually confirmed the assessment error aspects of writing assessment.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.617-622
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• 1994

Single crystals of misfit layered (LaS)xVS2(x 1.18) were grown using LaCl3(or I2) as a mineralizer (or transport agent) for the single crystal X-ray diffraction analysis. Procession photographs of (LaS)xVS2(x 1.18) were analyzed as the stacking structure of two kinds of LaS-and VS2-subcell. The result shows that two sublattices have common periodicities along the a*-and c*-axes, respectively, but not along the b*-axis. Sublattice dimensions of LaS and VS2 layers along b-axis were 5.67$\AA$ and 3.42$\AA$, respectively. Their ratio was 1.657 which is very close to 5/3.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.415-419
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• 2004

Thermal barrier systems are susceptible to instability of the thermally grown oxide(TGO) at the interface between the bond coat(BC) and the thermal barrier coating(TBC). The instabilities have been linked to thermal cycling and initial geometrical imperfections, as well as to misfit strains due to oxide growth and expansion misfit. In this work, deformation of TGO near a surface groove due to thermal cycling has been observed at high temperatures, $1100^{circ}C$, $1150^{circ}C$, $1200^{circ}C$. The effect of peak temperature and the thickness of substrate are presented.