• Journal of Magnetics
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• v.12 no.2
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• pp.53-58
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• 2007

Theory of the generation linewidth of a current-driven spin-torque magnetic nano-oscillator in the presence of thermal fluctuations has been developed and a simple analytical formula for the generation linewidth in the supercritical regime of generation has been derived. It is shown that the strong dependence of the oscillator frequency on the precession power leads to substantial broadening of the generation linewidth of a spin-torque oscillator compared to the case of a linear oscillator, i.e. an oscillator with power-independent generation frequency. The relation between the nonlinearity-induced broadening of the generation linewidth and the nonlinearity-induced increase of the phase-locking band of a spin-torque oscillator to an external microwave signal has been revealed. The derived expression for the generation linewidth predicts a linewidth minimum when the nano-contact is magnetized at a certain angle to its plane, at which the nonlinear frequency shift vanishes. This result is in good agreement with recent experiments.

• Journal of the Korean Magnetics Society
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• v.26 no.2
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• pp.50-54
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• 2016

We analyzed the angular dependence of ferromagnetic resonance linewidth in exchange coupled CoFe/MnIr bilayers. The maximum and minimum linewidth was observed in the easy and hard direction of unidirectional anisotropy by exchange coupling, respectively, and it was well agreed with the angular dependence of exchange bias field. The maximum linewidth was due to the twist of CoFe magnetization near CoFe/MnIr interface from direction of pinned MnIr spin to direction of applied magnetic field. While, minimum linewidth more higher than that of CoFe was related to rotatable anisotropy field, and explained by easy axis distribution of MnIr grains.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.3
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• pp.41-46
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• 1992

In this paper we report how to design integrated-mirror etalons for surface-emitting lasers and photonic switching without time-consuming numerical calculation. It consists of the following two-step process (step 1) find the minimum reflectance to achieve the maximum allowable linewidth. (step 2) find the number of the quarter-wave layers in each mirror to realize the reflectance given by step 1. The condition for maximum transmission in an integrated- mirror etalon is also derived. Under this condition we can achieve the required linewidth with the minimum number of quarterwave layers.

• Journal of the Korea Convergence Society
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• v.11 no.7
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• pp.157-162
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• 2020

In recent years, laser induced graphene process have been intensively studied for eco-friendly electronic device such as flexible electronics or thin film based energy storage devices because of its simple and effective process. In order to increase the performance and efficiency of an electronic device using such a graphene patterned structure, it is essential to study an optimized laser patterning condition as small as possible linewidth while maintaining the graphene-specific 2-dimensional characteristics. In this study, we analyzed to find the optimal line pattern by using a Ti:sapphire femtosecond laser based photo-thermal reduction process. we tuned intensity and scanning speed of laser spot for generating effective graphene characteristic and minimum thermal effect. As a result, we demonstrated the reduced graphene pattern of 30㎛ in linewidth by using a focused laser beam of 18㎛ in diameter.

• Korean Journal of Optics and Photonics
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• v.6 no.3
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• pp.228-232
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• 1995

We have made modulation doped SMQW-PBH-DFB-LD for high speed optical communications. The waveguide and barrier layers were doped by Zn with the concentration of $1.2 \times 10^{18}cm^{-1}$. Mean threshold current and slope efficiency were 24.88 mA (minimum 16 mA) and 0.197 mW/mA (maximum 0.275 mW/mA) respectively. Linewidth enhancement factor ($\alpha$) of MD-SMQW-PBH-DFB-LD was reduced than that of SMQW-PBH-DFB-LD. Linewidth enhancement factor of 1.8 owes to the large gain coefficient of modulation doped active layer. The resonance frequency was linearly increased with the square root of optical power. The resonance frequency in small signal modulation was measured as 8 GHz and -3 dB modulation bandwidth was 10 GHzat $46mA(I_{th}+30mA)$..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.771-775
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• 2015

In this paper, we designed and fabricated low cost imprinting process for micro patterning on FCCL (flexible copper clad laminate). Compared to conventional imprinting process, developed fabrication method processing imprint and UV photolithography step simultaneously and it does not require resin etch process and it can also reduce the fabrication cost and processing time. Based on proposed method, patterns with $10{\mu}m$ linewidth are fabricated on $180mm{\times}180mm$ FCCL. Compared to conventional methods using LDI (laser direct imaging) equipment that showed minimum line with $10{\sim}20{\mu}m$, proposed method shows comparable pattern resolution with very competitive price and shorter processing time. In terms of mass production, it can be applied to fabrication of large-area low cost applications including FPCB.

• Journal of Magnetics
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• v.22 no.2
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• pp.188-195
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• 2017

The ferromagnetic resonance and other magnetic properties dependence on $Ni^{2+}/Fe^{3+}$ ratio and crystallite size were investigated for nano nickel ferrite ($NiFe_2O_4$). The crystallite size was controlled by controlling the nickel content in the starting material solution. The XRD and TEM were utilized to measure the crystallite size through Scherrer formula and particle size respectively. The most frequent particle sizes were lower than crystallite size, which ranged from 16.5 to 44.65 nm. The general behavior of M-H loop shapes and parameters showed superparamagnetic one. The saturation magnetization had a maximum value at $Ni^{2+}/Fe^{3+}$ molar ratio equal to 0.186. The FMR signals showed, generally, broad linewidths, where the maximum width and minimum resonance field were for the sample of the lowest crystalline size. Furthermore, FMR resonance field shows linear dependence on crystalline size. The fitting relation was estimated to express this linear dependency on the base of behavior coincidence between particle size and the inverse of saturation magnetization. The given interpretations to understand the intercept and the slope meanings of the fitted relation were based on Larmor equation, and inhomogeneous in the anisotropy constant.

• Journal of the Korean Magnetic Resonance Society
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• v.11 no.2
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• pp.64-72
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• 2007

[ $^1H$ ] nuclear magnetic resonance (NMR) experiments have been performed at 30 - 300 K and 7 T to investigate dynamics of hydrogen bond network in the single crystal $(NH_4)_3H(SO_4)_2$. The two proton sites, ammonium proton and hydrogen-bond proton, are identified from the $^1H$ NMR MAS spectrum at 340 K. As temperature decreases, the $^1H$ NMR spectrum shifts to the higher frequency side with a larger linewidth. The spectrum at 65 K shows a distinctive change in line shape toward the ferroelectric transition at 63 K. The measured values of $T_1$ for ammonium and hydrogen-bond protons are similar in the whole range of temperature. $T_1$ of $^1H$ NMR shows a gradual decrease down to 120 K and starts to steeply increase below 100 K. Then $T_1$ shows abrupt decrease below 70 K with a sharp minimum at 63 K, where the ferroelectric transition occurs. This temperature dependence of spectrum and $T_1$ clearly prove that the large change in the dynamics of hydrogen bond network is associated with the ferroelectric phase transition at 63 K.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.3
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• pp.197-203
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• 2004

New lithography techniques are employed for the patterning of arbitrary shapes in nanometer scale. When, in the photolithography, the electromagnetic waves such as UV and X-ray are incident on the mask patterned in nanometer scale, the diffraction effect is unavoidable and degrades images of the mask imprinted on wafer. Only a convex lens is well-known Fourier transformer. It is possible to make the mask Fourier-transformed with the convex lens, even though the size of pattern on the mask is very large compared to the wavelength of electromagnetic wave. If the mask, modified according to new technique described in this paper, was placed at the front of the lens and was illuminated with laser beam, the nanometer-size patterns are only formed on the plane called Fourier transform plane. The new method presented here is quite simple setup and comparable with present and next generation lithographies such as UV/EUV photolithograpy and electron projection lithography when compared in attainable minimum linewidth. In this paper, we showed our theoretical research work in the field of Fourier optics, . In the near future, we are going to verify this theoretical work by experiments.