Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Design and Fabrication of Micro Patterns on Flexible Copper Clad Laminate (FCCL) Using Imprinting Process

임프린트 공정을 이용한 연성동박적층필름(FCCL)의 마이크로 패턴 제작

  • Min, Chul Hong (SYNOPEX INC., R&D Center) ;
  • Kim, Tae Seon (School of Information, Communications and Electronics Engineering, The Catholic University of Korea)
  • 민철홍 ((주)시노펙스 기술연구소) ;
  • 김태선 (가톨릭대학교 정보통신전자공학부)
  • Received : 2015.11.05
  • Accepted : 2015.11.24
  • Published : 2015.12.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, we designed and fabricated low cost imprinting process for micro patterning on FCCL (flexible copper clad laminate). Compared to conventional imprinting process, developed fabrication method processing imprint and UV photolithography step simultaneously and it does not require resin etch process and it can also reduce the fabrication cost and processing time. Based on proposed method, patterns with $10{\mu}m$ linewidth are fabricated on $180mm{\times}180mm$ FCCL. Compared to conventional methods using LDI (laser direct imaging) equipment that showed minimum line with $10{\sim}20{\mu}m$, proposed method shows comparable pattern resolution with very competitive price and shorter processing time. In terms of mass production, it can be applied to fabrication of large-area low cost applications including FPCB.

Keywords

References

  1. A. Cherala, P. Schumaker, B. Mokaberi, K. Selinidis, B. J. Choi, M. J. Meissl, N. N. Khusnatdinov, D. LaBrake, and S. Sreenivasan, IEEE/ASME Trans. Mech., 20, 122 (2015). [DOI: http://dx.doi.org/10.1109/TMECH.2013.2297679]
  2. Takei, Satoshi, and M. Hanabata, Appl. Phys. Lett., 107, 14 (2015). [DOI: http://dx.doi.org/10.1063/1.4932647]
  3. S. Y. Chou, P. R. Krauss, and P. J. Renstrom, Appl. Phys, Lett., 67, 3114 (1995). [DOI: http://dx.doi.org/10.1063/1.114851]
  4. J. Haisma, M. Verheijen, and K. Heuvel, J. Vac. Sci. Technol. B, 14, 4124 (1996). [DOI: http://dx.doi.org/10.1116/1.588604]
  5. S. Thoms, D. S. Macintyre, D. Moran, and I. Thayne, J. Vac. Sci. Technol. B, 22, 3271 (2004). [DOI: http://dx.doi.org/10.1116/1.1821504]
  6. Y. K. Kim, J. H. Kim, B. S. You, J. S. Jang, K. H. Kwon, J. Korean Inst. Electr. Electron. Mater. Eng., 24, 10 (2011).
  7. M. Austin, H. Ge, W. Wu, M. Li, and Z. Yu, Appl. phys. Lett., 84, 5229 (2004). [DOI: http://dx.doi.org/10.1063/1.1766071]
  8. D. Morihara, H. Hiroshima, and Y. Hirai, Microelectron. Eng., 86, 684 (2009). [DOI: http://dx.doi.org/10.1016/j.mee.2008.12.005]
  9. S. E. Lee, H. G. Lim, S. S. Lee, D. G. Choi, D. Lee, and S. U. Hong, Macromol. Res., 21, 916 (2013). [DOI: http://dx.doi.org/10.1007/s13233-013-1107-5]