• Bulletin of Food Technology
• /
• v.22 no.1
• /
• pp.59-66
• /
• 2009

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.40 no.5
• /
• pp.197-203
• /
• 2003

In this paper, we have presented millimeter-wave high conversion gain quadruple subharmonic mixers adopting the cascode harmonic generator The subharmonic mixers were successfully integrated by using 0.1 ${\mu}{\textrm}{m}$ GaAs pseudomorphic HEMTs(PHEMTs) and coplanar waveguide(CPW) structures. Measured output of 1st, 2nd and 4th harmonics of the fabricated cascode 4th harmonic generator are -21.42 dBm, -32.65 dBm and -13.45 dBm, respectively, for an input power of 10 dBm at 14.5 GHz. We showed that the highest conversion gain of 3.4 dB has obtained thus far at a LO power of 13 dBm from the fabricated subharmonic mixers. The millimeter-wave subharmonic mixer also ensure a high degree of isolation showing -53.6 dB in the LO-to-IF and -46.2 dB in the LO-to-RF, respectively, at a frequency of 14.5 GHz. The high conversion gain achieved in this work is the first report among the millimeter-wave subharmonic mixers.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.40 no.7
• /
• pp.293-299
• /
• 2003

In this paper, we have proposed a high conversion and isolation characteristic V-band quadruple sub-harmonic mixer monolithic circuit which is designed and fabricated for the millimeter wave down converter applications. While most of the sub-harmonic mixers use a half of fundamental frequency, we adopt a quarter of the fundamental frequency. The proposed circuit is based on a sub-harmonic mixer with APDP(anti-parallel diode pair) and the 0.1 ${\mu}{\textrm}{m}$ PHEMT's (pseudomorphic high electron mobility transistors). Lumped elements at IF port provide better selectivity of IF frequency and increase isolation. Maximum conversion gain of 0.8 ㏈ at a LO frequency of 14.5㎓ and at a RF frequency of 60.4 ㎓ is measured. Both LO-to-RF and LO-to-IF isolations are higher than 50 ㏈. The conversion gain and isolation characteristic are the best performances among the reported quadruple sub-harmonic mixer operating in the V-band millimeter wave frequency thus far.

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.84-87
• /
• 2000

In this paper, a high gain-broad bandwidth MMIC distributed amplifier was designed using cascaded single section distributed amplifier configuration. The PHEMT for this studies was fabricated at our lab The PHEMT has a 0.2 $\mu\textrm{m}$ gate length. a 80 $\mu\textrm{m}$ unit gate width and 4 gate fingers. A designed MMIC amplifier have higher S$\sub$21/ gain than the common distributed amplifier using the same number of active devices. From the simulated result, we obtained that the S$\sub$21/ gain of DC ∼ 20 GHz bandwidth was 15.6 dB and flatness was ${\pm}$0.9 dB, and input and output reflection coefficient were lower than -8 dB. The simulated gain shows an improvement 7.3 dB compared with those of conventional distributed amplifier. And the chip size is 2.0 ${\times}$ 1.2 $\textrm{mm}^2$.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.623-626
• /
• 2005

In this paper, we proposed a new type SIR bandpass filter using DAML. This filter is consisted of 2 layers with MEMS resonator layer and CPW feed line. DAML ring resonator is elevated with $10\;{\mu}m$ height from GaAs substrate. Using MEMS processing, we are able to realize SIR bandpass filter easily. Furthermore it is useful to integrate on conventional MMICs because it has CPW interfaces and ring resonator is isolated from substrate by air-gap. We optimized and measured the results that $S_{21}$ attenuation at rejected band is over 15 dB, insertion loss is inside the limit of 3 dB, and relative bandwidth is about 10 % at 60 GHz

• Proceedings of the IEEK Conference
• /
• 2002.07b
• /
• pp.1062-1065
• /
• 2002

We demonstrate the MMIC(monolithic microwave integrated circuit) frequency doublers generating stable and low-cost 29 ㎓ local oscillator signals from 14.5 ㎓ input signals. These devices were designed and fabricated by using the MMIC integration process of 0.1 $\mu\textrm{m}$ gate-length PHEMTs (pseudomorphic high electron mobility transistors). The measurements showed S$\_$11/ of -9.2 dB at 14.5 ㎓, S/sub22/ of -18.6 dB at 29 ㎓ and a minimum conversion loss of 18.2 dB at 14.5 ㎓ with an input power of 6 dBm. The fundamental signal of 14.5㎓ was suppressed below 15.2 dBc compared with the second harmonic signal at the output port, and the isolation characteristics of the fundamental signal between the input and the output port were maintained above 30 dB in the frequency range of 10.5 ㎓ to 18.5 ㎓.

• Journal of the Korean Ceramic Society
• /
• v.44 no.11
• /
• pp.597-606
• /
• 2007

With the advent of ubiquitous age, the high quality dielectric materials have been required for the wireless communications available to the millimeterwave as well as microwave frequencies. The utilizable region for the frequency has been expanding to the millimeter-wave region because of the shortage of radio frequency (RF) resources. These high frequencies would be expected for ultra high speed LAN, ETS and car anti-collision system on the intelligent transport system (ITS) and so on. Silicates are good candidates for microwave/millimeterwave dielectrics, because of their low dielectric constant ${\epsilon}_r$ and high quality factor (High Q). Forsterite ($Mg_2SiO_4$) is one of the silicates with low ${\epsilon}_r$ of 6.8 and Q f of 240000 GHz. In this paper, we reviewed following three categories for synthesis of forsterite: (1) Synthesis of high Q forsterite (2) Adjust the temperature coefficient of resonant frequency $TC_f$ (3) Diffusion of $SiO_{4^-}$ and Mg-ions on the formation of forsterite.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.18 no.5
• /
• pp.151-155
• /
• 2004

Millimeterwave OFDM wireless LAN system has been modeled for ACPR analysis. With simple AM-to-PM modeling for power amplifier and system simulation technique, power amplifier ACPR is simulated for OFDM modulation, Also, amplifier back-off value satisfying the required ACPR and the ACPR degradation have been predicted with the measured and modeled AM-tn-PM distortion.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.40 no.6
• /
• pp.247-252
• /
• 2003

In this paper, we have designed and fabricated a broadband 2-stage MMIC amplifier. Broadband characteristics could be obtained by compensated matching networks in a 2-stage amplifier design. This method is compensating low gains at lower frequencies in the 1st-stage with higher gains at lower frequencies in the 2nd- stage and then finally flat gains are obtained in the wide frequency ranges. Also, we have obtained not only broadband characteristics but also high gain using compensation matching network. The fabricated amplifier is measured by attaching on the test PCB(Printed Circuits Board). The measurement results are bandwidth of 1.1~2.8 GHz, S$_{21}$ gain of 11.1$\pm$0.3 ㏈ and P1㏈ of 12.6 ㏈m at 2.4 GHz.

• Journal of Navigation and Port Research
• /
• v.34 no.3
• /
• pp.161-166
• /
• 2010

The bandwidth of detecting radars used for military purpose is increasingly broadened, and recently, the frequency band of the detecting radars is expanding to millimeterwave bands of the millimeterwave bands of 35 GHz and 94 GHz. Since, especially, it is essential and important to fabricate and develop EM wave absorber with the absorption ability more than 10 dB in 94 GHz band, the EM wave absorber was manufactured based on the design method by FDTD simulation. As a result, the developed EM wave absorber with the composition ratio of Binder(CPE with additional materials) : Carbon = 70 : 30 wt.% has the thickness of 0.7 mm and the absorption ability more than 14 dB in the frequency range of 94 GHz.