Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design of a High Gain-Broadband MMIC Distributed Amplifier

고이득-광대역 MMIC Distributed Amplifier의 설계

  • Kim, S.C. (Millimeterwave Innovation Technology Research Center, Dongguk Univ.) ;
  • An, D. (Millimeterwave Innovation Technology Research Center, Dongguk Univ.) ;
  • Cho, S.K. (Millimeterwave Innovation Technology Research Center, Dongguk Univ.) ;
  • Yoon, J.S. (Millimeterwave Innovation Technology Research Center, Dongguk Univ.) ;
  • Rhee, J.K. (Millimeterwave Innovation Technology Research Center, Dongguk Univ.)
  • 김성찬 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 안단 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 조승기 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 윤진섭 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이진구 (동국대학교 밀리미터파 신기술 연구센터)
  • Published : 2000.06.01
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Abstract

In this paper, a high gain-broad bandwidth MMIC distributed amplifier was designed using cascaded single section distributed amplifier configuration. The PHEMT for this studies was fabricated at our lab The PHEMT has a 0.2 $\mu\textrm{m}$ gate length. a 80 $\mu\textrm{m}$ unit gate width and 4 gate fingers. A designed MMIC amplifier have higher S$\sub$21/ gain than the common distributed amplifier using the same number of active devices. From the simulated result, we obtained that the S$\sub$21/ gain of DC ∼ 20 GHz bandwidth was 15.6 dB and flatness was ${\pm}$0.9 dB, and input and output reflection coefficient were lower than -8 dB. The simulated gain shows an improvement 7.3 dB compared with those of conventional distributed amplifier. And the chip size is 2.0 ${\times}$ 1.2 $\textrm{mm}^2$.

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