• Title/Summary/Keyword: Millimeter structure

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Broadband W-band Tandem coupler using MIMIC technology (MIMIC 기술을 이용한 광대역 W-band Tandem 커플러)

  • Lee, Mun-Kyo;An, Dan;Lee, Bok-Hyung;Lim, Byeong-Ok;Lee, Sang-Jin;Moon, Sung-Woon;Jun, Byoung-Chul;Kim, Yong-Hoh;Yoon, Jin-Seob;Kim, Sam-Dong;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.7 s.361
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    • pp.105-111
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    • 2007
  • In this paper, we designed and fabricated a 3-dB tandem coupler using air-bridge technology for millimeter-wane monolithic integrated circuits, operating at W-band($75{\sim}110\;GHz$) frequency. Tightly edge-coupled CPW line has low directivity due to different even-mode and odd-mode phase velocity. To overcome this disadvantage, a 3-dB tandem coupler which comprises the two-sectional weakly parallel-coupled lines with equal phase velocity was designed at W-band. The proposed coupler was fabricated using air-bridge technology to monolithically materialize the uniplanar coupler structure instead of conventional multilayer or wire bonded structure. From the measurements, the coupling coefficient of $2.9{\sim}3.6\;dB$ and the good phase difference of $91.2{\pm}2.9^{\circ}$ were obtained in broad frequency range of $75{\sim}100\;GHz$.

High Efficiency Q-band MIMIC HEMT-Oscillator Operating at Low Voltages (고효율 및 저전압 동작 특성의 Q-band MIMIC HEMT발진기)

  • Lee, Mun-Kyo;An, Dan;Lee, Bok-Hyung;Kim, Sung-Chan;Lim, Byeong-Ok;Han, Hyo-Jong;Chae, Yeon-Sik;Shin, Dong-Hoon;Kim, Yong-Hoh;Park, Hyung-Moo;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.4
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    • pp.45-50
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    • 2004
  • In this paper, we present the low voltage and high efficiency Q-band MIMIC oscillator using device-level power combined structure. The oscillator was successfully integrated by using 0.1 ${\mu}{\textrm}{m}$ GaAs PHEMTS and the CPW transmission line. We show that the highest efficiency is 19 % with an output power of 2.6 ㏈m at a frequency of 34.56 ㎓. The operating voltage of the oscillator is 2.2 V which is lower voltage than that of previously reported oscillators at Q-band. And the maximum output power of 6.7 ㏈m was obtained at a frequency of 34.56 ㎓.

Design and fabrication of V-band cascode down-mixer using CPW structure (CPW 구조를 이용한 V-band cascode 하향 주파수 혼합기의 설계 및 제작)

  • An, D.;Chae, Y. S.;Kang, T. S.;Sul, W. S.;Lim, B. O.;Rhee, J. K.
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2001.11a
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    • pp.213-217
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    • 2001
  • 본 논문에서는 CPW 구조를 이용하여 60 GHz 무선 시스템 응용을 위한 V-band용 하향 주파수 혼합기를 설계 및 제작하였다. 하향 주파수 혼합기의 설계 및 제작에 있어서 GaAs PHEMT(Pseudomorphic high electron mobility transistor)를 기반으로 하였으며, 회로설계를 위해 coplanar waveguide(CPW) 라이브러리를 구축하여 이용하였다. 제작된 하향 주파수 혼합기의 변환이득은 국부발진주파수(LO) 입력이 8 dBm일 때 -8.5 dB의 최대 변환이득 특성을 얻었으며 Pl dB는 -3.3 dBm을 얻었다. 제작된 회로의 칩 크기는 1.6$\times$l.6 $\textrm{mm}^2$ 이다.

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Design of High Gain Log-Periodic Tooth Antenna for Image Sensor (이미지 센서용 고이득 Log-Periodic Tooth 안테나 설계)

  • Shim Jae-Ruen
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2006.05a
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    • pp.603-606
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    • 2006
  • In this study, we proposed a Modified Log-Periodic Tooth antenna structure with reflector for millimeter wave image sensor of PMMW(Passive Millimeter Wave). PMMW image sensor satisfy the requirements, such as, High Gain, Wideband, and Planar antenna structure.

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Technical Research on Waveguide-to-Microstrip Transition Using an Inline Structure for Millimeter-Wave Seekers (Inline 구조를 이용한 밀리미터파 탐색기용 도파관-마이크로스트립 전이구조 기술 연구)

  • Park, Sang Woo;Lee, Dong Jae;Song, Sung Chan;Lee, Man Gyu;Kim, Yong Hwan;Kim, Jeong Ryul;Hong, Dong Hee
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.1
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    • pp.54-59
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    • 2019
  • In this paper, we report on the waveguide-to-microstrip transition with an inline structure for the millimeter band. The waveguide-to-microstrip transition comprises a probe, an inductive line, a ${\lambda}/4$ impedance transformer, and a 50-ohm microstrip line. For the transition design, we optimized the characteristic impedances and lengths of the component parts. The fabricated transition exhibits an insertion loss of 2.1 dB and an input/output return loss of below 13 dB at a millimeter band frequency of 94 GHz.

DC ∼ 45 GHz CPW Wideband Distributed Amplifier Using MHEMT (MHEMT를 이용한 DC ∼ 45 GHz CPW 광대역 분산 증폭기 설계 및 제작)

  • Jin Jin-Man;Lee Bok-Hyung;Lim Byeong-Ok;An Dan;Lee Mun-Kyo;Lee Sang-Jin;Ko Du-Hyun;Beak Yong Hyun;Oh Jung-Hun;Chae Yeon-Sik;Park Hyung-Moo;Kim Sam-Dong;Rhee Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.12
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    • pp.7-12
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    • 2004
  • In this paper, CPW wideband distributed amplifier was designed and fabricated using 0.1 $\mum$ InGaAs/InAlAs/GaAs Metamorphic HEMT(High Electron Mobility Transistor). The DC characteristics of MHEMT are 442 mA/mm of drain current density, 409 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 140 GHz and the maximum oscillation frequency(fmax) is 447 GHz. The distributed amplifier was designed using 0.1 $\mum$ MHEMT and CPW technology. We designed the structure of CPW curve, tee and cross to analyze the discontinuity characteristics of the CPW line. The MIMIC circuit patterns were optimized electromagnetic field through momentum. The designed distributed amplifier was fabricated using our MIMIC standard process. The measured results show S21 gain of above 6 dB from DC to 45 GHz. Input reflection coefficient S11 of -10 dB, and output reflection coefficient S22 of -7 dB at 45 GHz, respectively. The chip size of the fabricated CPW distributed amplifier is 2.0 mm$\times$l.2 mm.

A GaAs Micromachined Millimeter-wave Lowpass Filter Using Microstrip Stepped-Impedance Hairpin Resonator

  • Cho Ju-Hyun;Yun Tae-Soon;Baek Tae-Jong;Ko Baek-Seok;Shin Dong-Hoon;Lee Jong-Chul
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.3 no.2 s.5
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    • pp.85-93
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    • 2004
  • In this paper, microstrip stepped-impedance hairpin resonator (SIR) lowpass filter f.PF) by surface rnicromachining on GaAs substrate is sugsested. This filter has the advantages of compact side, easy fabrication, and sharp cutoff frequency response. The new SIR LPF shows the 3 dB passband of dc to 33 GHz, the insertion loss of 0.82 dB, and the return loss of better than 17 dB up to 25.57 GHz. This filter is useful for many microwave system applications.

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Study Of Millimeter-Wave Passive Imaging Sensor Using the Horn Array Antenna (혼 배열 안테나를 이용한 밀리미터파 수동 이미징 센서 연구)

  • Lim, Hyun-Jun;Chae, Yeon-Sik;Kim, Mi-Ra;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.2
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    • pp.74-79
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    • 2010
  • We have designed a millimeter-wave passive imaging sensor with multi-horn antenna array. Six horn array antenna is suggested that it is integrated into one housing, and this antenna is effectively configurated m space to assemble with LNA of WR-10 structure. Antenna is designed to have the peak gain of 17.5dBi at the center frequency of 94GHz, and the return loss of less than -25dB in W-band, and the small aperture size of $6mm{\times}9mm$ for antenna configuration with high resolution. LNA is designed to have total gain of more than 55dB and noise figure of less than 5dB for good sensitivity. We made a detector for DC output translation of millimeter-wave signal with zero bias Schottky diode. It is shown that good sensitivity of more than 500mV/mW.

Design of Dual Curved Lens for Millimeter-Wave Imaging (밀리미터파 이미징을 위한 이중 곡률 렌즈의 설계)

  • Lee, Won-Hui;Pyo, Seongmin
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.16 no.6
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    • pp.239-242
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    • 2016
  • In this paper, we proposed the dual curved lens of concave type. HDPE (High Density Polyethylene) used to fabricate the dual curved lens. The dual curved lens consisted of two concave structures. Role of two concave structures is to beam uniform and expansion. A small concave structure has the greater curvature than big concave structure. The dual curved lens will apply to millimeter imaging system. We measured the dual curved lens performance using 250 GHz VDI source. And we simulated the dual curved lens using ZEMAX. Fabricated lens have a good performance for beam uniform and expansion.