• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.73-74
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• 2006

Carbon nanotubes (CNTs) have recently attracted great attention because of their excellent physical properties, such as high mechanical strength, thermal stability, and electronic properties. These useful properties of carbon nanotubes make themselves good candidates for various application field, such as a transistor, battery, field emission display, nanoscale inter-connects, and so on. Gas-phase techniques offer the unique ability to synthesize well-oriented arrays of CNTs. However, it is seldom reported that the pressure influences on the growth of CNTs under low substrate temperature. In this work, the effect of the working pressure and the influence of the catalyst preparation on the properties of CNTs grown by microwave plasma chemical vapor deposition (MPCVD) were investigated.

• Advances in materials Research
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• v.1 no.1
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• pp.37-49
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• 2012

In this paper, we present modeling and characterization of CNT-based TSVs to be used in high-frequency RF applications. We have developed an integrated model of CNT-based TSVs by incorporating the quantum confinement effects of CNTs with the kinetic inductance phenomenon at high frequencies. Substrate parasitics have been appropriately modeled as a monolithic microwave capacitor with the resonant line technique using a two-polynomial equation. Different parametric variations in the model have been outlined as case studies. Furthermore, electrical performance and signal integrity analysis on different cases have been used to determine the optimized configuration for CNT-based TSVs for high frequency RF applications.

• Journal of Magnetics
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• v.22 no.2
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• pp.275-280
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• 2017

A magnetic-field tunable 2.4 GHz microwave bandpass filter having insertion loss < -5dB on an FR4 substrate with the flaky magnetic material was designed and characterized. The tunability in the designed bandpass filter was achieved by adhering soft magnetic materials on top of the device. This soft magnetic material can be composed of ferromagnetic substance or ferrimagnetic substance. The performance of the designed bandpass filter under its influence is investigated. The frequency offset ratio changes over 30 %. There is over 20 % change in the center frequency towards the lower frequency region due to this application. These magnetic material layers achieved the center frequency shift and bandwidth extension without actually changing the original structure of the device.

• Korean Journal of Materials Research
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• v.7 no.5
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• pp.431-433
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• 1997

We investigated a double ring resonator(DRR)device to improve the resonating Q value of a superconductor resonator. To make a DRR device, we made a large area YBCO film on a MgO substrate by pulsed laser deposition(PLD). Thetransition temperature was 88 K and the film was uniformly deposited. We also deposited 500$\AA$SrTiO$_{3}$on the YBCO thin film to protect the superconducting properties from degradation. The loaded Q value was measured as 50000 from simulation and as 2000 from experiment near 10GHz at 77K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.382-385
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• 2001

In the previous study, a new LTCC material in the PbWO$_4$-TiO$_2$-B$_2$O$_3$-CuO system was introduced. The developed material can be sintered at 850$^{\circ}C$ and its dielectric properties are $\varepsilon$$\sub$r/=20-25, Qxf$\sub$o/=30000∼500000Hz, and $\tau$$\sub$f/=0.2∼30ppm/$^{\circ}C$, respectively Therefore this material can be used as a LTCC substrate material for fabrication of multilayered high frequency communication module set. In present study, using this material, tape casting condition was established. With this condition, a multilayered resonator was fabricated and its electrical properties were examined. In present study, an antenna-duplexer module was also fabricated. Frequency characteristics of as-fabricated antenna-duplexer module was compared with simulation results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.932-934
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• 2004

Due to the increasing variety and capacity of information and communication media, systems of microwave band communication have branched out extensively. Surface acoustic wave (SAW) devices fabricated FeSiB thin films on quartz substrate were deposited by RF magnetron sputter and by photolithographic processes. This device is with a center frequency 146MHz and the insertion loss as low as -43dB was obtained.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.68.1-68.1
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• 2012

The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.7-11
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• 2007

In this paper, we proposed the dual-mode stepped impedance ring resonator bandpass filter for MMIC (Microwave Monolithic Integrated Circuit) applications using the dielectric-supported air-gapped microstrip line (DAML). The ring resonator fabricated by surface micromachining technology. This filter consists of a DAML resonator layer and a CPW feed line. The DAML ring resonator is elevated with $10{\mu}m$ height from GaAs substrate surface. This bandpass filter is $1-{\lambda}g$ type stepped impedance ring resonator including dual-mode resonance. From the measurements, we obtained attenuation of over 15 dB and insertion loss of 2.65 dB at the center frequency of 97 GHz. Relative bandwidth is about 12 % at 97 GHz. Furthermore, the proposed bandpass filter is useful to integrate with conventional MMICs.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.4
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• pp.27-30
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• 2016

in this paper, to improve the narrow bandwidth problem of the microstrip antenna for WLAN and WiFi dual band array antenna was designed to satisfy the bandwidth of 3.6GHz and 5.2GHz it contained with IEEE 802. 11. The substrate of proposed microstrip array antenna is FR-4(er=4.3) and $25mm{\times}45mm{\times}0.8mm$ size and thickness t=0.035mm, and the simulation was used for CST Microwave Studio 2014. input return loss compared -10dB less than operates at and when gain 3.6GHz 2.516dB, 5.2GHz showed the results of 3.581dB. the antenna designed to be miniaturized and the be used in electronic devices such as mobile phone.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.161-166
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• 2009

In this paper, we propose the internal mobile antenna for TDMB and KPCS. The proposed antenna is made of different dielectric substrate and it has small size ($45{\times}8{\times}8\;mm$, about 2.8 cc) for mobile device. TDMB antenna is designed spiral structure that makes maximum current for each cell and KPCS antenna is PIFA that is usually used for internal antenna. In order to compensate length of resonance TDMB antenna has a large inductor above 100 nH. In this case, the inductor isolate KPCS signal at TDMB by cutting high frequency. Also the antenna has good isolation because TDMB radiator is parasitic element in KPCS band. We simulated the antenna by using CST microwave studio and measured performance of the antenna in anechoic chamber Proposed antenna has $-6{\sim}-14\;dBi$ gain for TDMB and $-3.5{\sim}-5\;dBi$ gain for KPCS.