• Journal of Electrical Engineering and Technology
• /
• 제7권6호
• /
• pp.983-989
• /
• 2012

The purpose of this paper is to decide the optimum synthesis conditions of polycrystalline diamond films according to the ratio of gas mixture. Diamond films were deposited with cyclo-hexane as a carbon precursor by the microwave plasma enhanced chemical vapor deposition process. The optimum oxygen ratio to cyclo-hexane was reached about 125 % under the fixed 0.3% c-hexane in hydrogen. Oxygen plays a role in etching the graphitic components of carbon sp2 bond effectively. By OES measurement, the best synthesis conditions found out about 12.5 % and 15.75 %, which is the emission intensity ratios of CH(B-X) and $H{\beta}$ on $H{\alpha}$, respectively. Also, the electron temperature was similar about 5,000 to 5,200 K in this work.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.94-94
• /
• 2010

As a new plasma source for the plasma enhanced chemical vapor deposition (PCVD) of ${\mu}c$-Si deposition, we have demonstrated a microwave-excited plasma source, which can produce high density (${\sim}10^{12}\;cm^{-3}$) plasma with low electron temperature (~1 eV) and low plasma potential (~10 V). In this plasma source, microwave power radiated from slot antenna is distributed along the plasma-dielectric interface in large area and this enables us to produce uniform high-density plasma in large area. To optimize deposition conditions, deep understanding of gas phase chemistry is indispensable. In this presentation, we will discuss on the gas phase diagnostics of microwave $SiH_4/H_2$ plasma such as $SiH_4$ dissociation or $SiH_3$ radical profile as well as deposited film properties.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.158.1-158.1
• /
• 2013

Microwave는 일반적으로 300 [MHz]~30 [GHz] 사이의 주파수를 가지는 전파로 1 [m] 이하의 파장을 가진다. Microwave를 이용한 플라즈마의 경우 낮은 이온 에너지, 효율적인 전자 가열, 넓은 동작압력 범위, 높은 밀도 등의 장점을 가지고 있어 PECVD(Plasma Enhanced Chemical Vapor Deposition)에 적합한 플라즈마 소스라고 할 수 있다. 또한 Microwave는 파장의 길이가 증착이 이루어지는 진공 챔버의 길이보다 매우 작기 때문에 대면적 적용성이 용이하므로 현재 많은 연구가 이루어지고 있다. 본 연구에서는 Fluid Simulation을 통해 Maxwell's equation, continuity equation, electromagnetic wave equation 등을 이용하여 Microwave의 파워 및 압력에 따른 플라즈마 parameter를 계산하고, 자체 제작한 Linear microwave plasma 장치에서 정전 탐침(Langmuir Probe)을 이용하여 플라즈마 Parameter를 측정하였다. 또한 Simulation 결과와 실험결과를 비교 분석하였다.

• 한국결정성장학회지
• /
• 제14권5호
• /
• pp.211-214
• /
• 2004

Carbon nanofiber bundles were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition system. These bundles were vertically well-grown under the high negative bias voltage condition. The bundles were composed of the individual carbon nanofiber having less than 100 nm diameters. Turn-on voltage of the field emission was measured around 0.8 V/$\mu\textrm{m}$. Fowler-Nordheim plot of the measured values confirmed the field emission characteristic of the measured current.

• 한국결정성장학회지
• /
• 제14권1호
• /
• pp.1-5
• /
• 2004

Carbon nanofilaments were formed on silicon substrate via microwave plasma-enhanced chemical vapor deposition method. The structure of carbon nanofilaments was identified as the carbon nanofibers. The extent of carbon nanofibers growth and the diameters of carbon nanofibers increased with increasing the total pressure. The growth direction of carbon nanofibers was horizontal to the substrate. Laterally grown carbon nanofibers showed the semiconductor electrical characteristics.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1994년도 제6회 학술발표회 논문개요집
• /
• pp.98-101
• /
• 1994

white diamond thin film, which should be compposed of almost ppure diamond, could be successfully obtained under high ppressure conditions(above 150 Torr) by means of MppECVD(microwave pplasma enhanced chemical vappor depposition, ASTeX 1.5 kW). Characteristics of the films with varing expperimental pparameters have been examined. From the expperimental results, we will discuss the surface morpphology and the growth mechanism of the films.

• 반도체디스플레이기술학회지
• /
• 제3권3호
• /
• pp.45-50
• /
• 2004

Highly oriented diamond (HOD) films in polycrystalline can be grown on the (100) silicon substrate by microwave plasma CVD. Bias enhanced nucleation (BEN) method was adopted for highly oriented diamond deposition with high nucleation density and uniformity. The substrate was biased up to -250[Vdc] and bias time required for forming a diamond film was varied up to 25 minutes. Diamond was deposited by using $\textrm{CH}_4$/CO and $H_2$ mixture gases by microwave plasma CVD. Nucleation density and degree of orientation of the diamond films were studied by SEM. Thermal conductivity of the diamond films was ∼5.27[W/cm.K] measured by $3\omega$ method.

• 한국결정성장학회지
• /
• 제16권1호
• /
• pp.20-24
• /
• 2006

Iridium-catalyzed carbon nanofilaments were formed on MgO substrate as a function of the gap between the substrate and the plasma using microwave plasma-enhanced chemical vapor deposition method. Under the remote plasma condition, carbon nanofibers were formed on the substrate. Under the adjacent plasma condition, on the other hand, carbon nanotubes-like materials instead of carbon nanofibers could be formed. When the substrate immersed into the plasma, any carbon nanofilaments formation couldn't be observed. During the reaction, the substrate temperatures were measured as a function of the gap. Based on these results, the cause for the different carbon nanofilaments formation according to the gap was discussed.

• 한국진공학회지
• /
• 제22권1호
• /
• pp.31-36
• /
• 2013

마이크로플라즈마 화학기상증착법(microwave plasma enhanced chemical vapor deposition, MPCVD)에 의하여 형성된 비정질 탄소 박막의 효율적인 도핑 공정을 위하여, 비정질 탄소 박막의 성장 직전 nucleated seed 상태의 기판 혹은 일부 성장된 박막 위에 비소(As) 이온을 이온 주입하였고 그 직후 다시 MPCVD에 의하여 박막을 성장시켰다. MPCVD에 의한 성장 자체가 약 $500{\sim}600^{\circ}C$ 온도에서의 어닐링 공정을 대체할 수 있으므로, 기존의 이온 주입 후 별도의 어닐링 공정과 비교 시 간략화된 공정으로도 어닐링 효과가 있다고 할 수 있다. 이온 주입 후 박막 성장으로 어닐링 효과를 얻은 비정질 탄소 박막의 경우, $2.5V/{\mu}m$의 전계에서 약 $0.1mA/cm^2$의 전계 방출 특성을 관찰할 수 있었고 또한 라만 스펙트럼 특성에서도 다이아몬드 특성 및 그래파이트 특성 모두 뚜렷이 관찰되었다. 전기적, 구조적 특성 관찰로부터 이온 주입된 As 이온이 자동 어닐링 효과에 의해 충분히 비정질 탄소 박막에 도핑되었다고 할 수 있다.

• 한국진공학회지
• /
• 제11권4호
• /
• pp.256-260
• /
• 2002

Carbon nanotubes on metal(SUS304) substrates were synthesized by using micro-wave plasma-enhanced chemical vapor deposition at $650^{\circ}C$ with gas mixture CH$_4$(11%) and H$_2$(89%). Their structure was investigated by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy was also used to justify the structure and crystallinity of graphite sheets. High-resolution transmission electron microscopy images clearly showed carbon nanotubes to be multwalled. The measured turn-on field and current density obtained from I-V measurement were 4.4 V/$\mu \textrm{m}$ and $8.4\times10^1\mu\textrm{A}/\textrm{cm}^2$, respectively.