• Title/Summary/Keyword: Microwave output power

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High-Gain Double-Bulk Mixer in 65 nm CMOS with 830 ${\mu}W$ Power Consumption

  • Schweiger, Kurt;Zimmermann, Horst
    • ETRI Journal
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    • v.32 no.3
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    • pp.457-459
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    • 2010
  • A low-power down-sampling mixer in a low-power digital 65 nm CMOS technology is presented. The mixer consumes only 830 ${\mu}W$ at 1.2 V supply voltage by combining an NMOS and a PMOS mixer with cascade transistors at the output. The measured gain is (19 ${\pm}$1 dB) at frequencies between 100 MHz and 3 GHz. An IIP3 of -5.9 dBm is achieved.

A Design of High Efficiency Microwave Wireless Power Acceptor IC (고효율 마이크로파 무선 전력 수신 집적회로 설계 및 구현)

  • Jung, Won-Jae;Jung, Hyo-Bin;Kim, Sang-Kyu;Jang, Jong-Eun;Park, Jun-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.8
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    • pp.1125-1131
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    • 2013
  • Wireless power transmission technology has been studied variety. Recently, wireless power transmission technology used by resonance and magnetic induction field is applied to various fields. However, magnetic resonance and inductive coupling are have drawbacks - power transmission distance is short. Microwave transmission and accept techniques have been developed to overcome short distance. However, improvement in efficiency is required. This paper, propose a high-efficiency microwave energy acceptor IC(EAIC). Suggested EAIC is consists of RF-DC converter and DC-DC converter. Wide Input power range is -15 dBm ~ 20 dBm. And output voltage is boosted up to 5.5 V by voltage boost-up circuit. EAIC can keep the output voltage constant. Available efficiency of RF-DC converter is 95.5 % at 4 dBm input. And DC-DC efficiency is 94.79 % at 1.1 mA load current. Fully EAIC efficiency is 90.5 %.

A Study on the Design of Microwave Oscillator Output Matching Circuit Using 3-dB Coupler Tuner (3-dB Coupler Tuner를 이용한 초고주파 발진기의 출력 정합회로 설계에 관한 연구)

  • 이석기;오재석;이영순;김병철
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.9 no.2
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    • pp.171-178
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    • 1998
  • Generally, the output matching circuit has the most influence to the output power of oscillator and existing method for output matching has difficulty for making the optimum output matching circuit because the matching has to be done nearby the infinite impedance area of the Smith Chart. In this paper, it is studied for the output matching circuit of the microwave oscillator to get the maximum output power. The maximum output point can be found by adjusting the position of moving short in the Tuner while the oscillator is operating after connect the 3-dB coupler Tuner to the oscillator without output matching circuit. To design the oscillator for the maximum output power can be done easily with the microstrip line which is realized from the measured S-parameters of Tuner. In compare the oscillator by the existing method with another one by the suggested method in this paper, the first one has 6.45 dBm output power and second one has 9.71 dBm which is 3.26 dBm higher than the first one at the oscillation frequency 1.0338 GHz.

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Simulation of High-Power Magnetron Oscillators Using a MAGIC3D Code (MAGIC3D 코드를 애용한 고출력 마그네트론 발진기의 시뮬레이션)

  • Jung, S.S.
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.11
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    • pp.538-543
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    • 2006
  • A high-Power continuous-wave (CW) ten-vane double-strapped magnetron oscillator has been investigated using three-dimensional (3D) particle-in-cell (PIC) numerical simulation code, MAGIC3D. The resonant modes and their resonant frequencies of the ten-vane strapped magnetron resonator were obtained to show a large mode separation near the ${\pi}$-mode. An electron cloud formed in an anode-cathode gap, called an interaction space was confined well enough to result in no leakage current. Five spokes were clearly observed in the electron cloud, which definitely ensured the ${\pi}$-mode oscillation in the ten-vane magnetron. Numerical simulations predicted that the saturated microwave output power measured at the coaxial output port was 5.41 kW at the microwave frequency of 893 MHz, corresponding to a power conversion efficiency of 72.6% when the external axial magnetic field was 1150 gauss and the electron beam voltage and current were 6 kV and 1.25 A, respectively.

A Study on the Design of Amplifier for Microwave using GaAs FET (GaAs FET를 이용한 초고주파용 증폭기 설계에 관한 연구)

  • 김용기;이승무;홍의석
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.2
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    • pp.18-23
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    • 1992
  • Recently, SSPAs(Solid-State Power Amplifiers) with high linearity and efficiency replace TWTAs (Traveling-Wave-Tube Amplifiers) in satellite transponders. In this paper, a power amplifier with maximum output power is designed and constructed using GaAs FET(MGF-1302) as a test model for the development of SSPAs. For conjugate matching of input and output network, transimission lines and stubs are optimized using microwave CAD program, LINMIC+. Power amplifier is realized on the teflon substrate($\in$S1rT=2.45) with a bandwidth of 1GHz at a center frequency of 8GHz. Maximum stable gain of simulation and simulation and experimental result is obtained 9.23, 7.65 dB, respectively.

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High Output Power and High Fundamental Leakage Suppression Frequency Doubler MMIC for E-Band Transceiver

  • Chang, Dong-Pil;Yom, In-Bok
    • Journal of electromagnetic engineering and science
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    • v.14 no.4
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    • pp.342-345
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    • 2014
  • An active frequency doubler monolithic microwave integrated circuit (MMIC) for E-band transceiver applications is presented in this letter. This MMIC has been fabricated in a commercial $0.1-{\mu}m$ GaAs pseudomorphic high electron mobility transistor (pHEMT) process on a 2-mil thick substrate wafer. The fabricated MMIC chip has been measured to have a high output power performance of over 13 dBm with a high fundamental leakage suppression of more than 38 dBc in the frequency range of 71 to 86 GHz under an input signal condition of 10 dBm. A microstrip coupled line is used at the output circuit of the doubler section to implement impedance matching and simultaneously enhance the fundamental leakage suppression. The fabricated chip is has a size of $2.5mm{\times}1.2mm$.

A CMOS Bridge Rectifier for HF and Microwave RFID Systems

  • Park Kwangmin
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.6
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    • pp.237-240
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    • 2004
  • In this paper, a CMOS bridge rectifier for HF and microwave RFID systems is presented. The proposed RFID CMOS bridge rectifier is designed with two NMOSs and two PMOSs whose gates are connected to the antenna, and it is operated as a full wave bridge rectifier. The simulation results obtained with SPICE show the well rectified and high enough DC output voltages for the operating frequencies of 13.56 MHz, 915 MHz, and 2.45 GHz which are used in various RFID systems. The obtained DC output voltages are sufficiently high for driving the low power microchip in RFID transponder for the frequency range of HF and microwave.

A Study on the Design and Structure of A Microwave Broadband Multi-Section Power Divider (마이크로파대 광대역 다단 전력분배기의 설계방법과 구조에 관한 연구)

  • Park, Jun-Seok;Kim, Hyeong-Seok
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1829-1831
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    • 2001
  • A novel multi-section power divider configuration is proposed to obtain wide-band frequency performance up to microwave frequency region. Design procedures for the proposed microwave broadband power divider are composed of a planar multi-section three-ports hybrid and a waveguide transformer design procedures. The multi-section power divider is based on design theory of the optimum quarter-wave transformer. Furthermore, in order to obtain the broadband isolation performance between the two adjacent output ports, the odd mode equivalent circuit should be matched by using the lossy element such as resistor. The derived design formula for calculating these odd mode matching elements is based on the singly terminated filter design theory. The waveguide transformer section is designed to suppress the propagation of the higher order modes such as waveguide modes due to employing the metallic electric wall. Simulation and experiment show excellent performance of multi section power divider.

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Harmonic Suppression of the Input Current in Microwave Oven Using LLC Resonant Inverter (전자레인지용 LLC 공진형 인버터의 입력전류 고조파 억제)

  • Kang, Kyelyong;Kim, Heung-Geun;Cha, Honnyong
    • The Transactions of the Korean Institute of Power Electronics
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    • v.23 no.3
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    • pp.225-230
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    • 2018
  • This paper proposes a parametric design of an LLC resonant inverter used for a microwave oven. To improve the harmonic performance of the microwave oven, a current controller with a variable PI gain is proposed. Due to the recent strengthening of harmonics regulations, inverter control technology for microwave ovens is now required to satisfy harmonic performance. In an LLC resonant inverter, the voltage gain varies remarkably depending on the magnetron voltage, output power, and input voltage. To satisfy harmonic performance, a controller that can maintain operation in the zero-voltage switching (ZVS) region and control changes in voltage gain is required. The modified design of the LLC resonant inverter ensures ZVS operation even when the magnetron is heated. Application of the variable current controller improves harmonic control according to the instantaneous gain curve change. The validity of the proposed power control with a variable current controller is verified by experiments with a 1200 W microwave oven.

A Study on Novel Power Supply for Microwave Oven Using HVC Embedded High Frequency Transformer

  • Cho Jun-Seok;Park Kang-Hee;Jeong Byung-Hwan;Mok Hyung-Soo
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.581-585
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    • 2001
  • This paper describes novel high voltage capacitor(HVC) embedded high frequency transformer and novel inverter power supply topology for driving magnetron in microwave oven. This transformer is used to achieve down­sizing, low-cost and efficiency improvement. Proposed transformer has HVC in its secondary winding. Therefore, this transformer does not need external high voltage capacitor which used in conventional power supply. As use of this transformer, output voltage is shifted from ground to above 2000[V] and efficiency of microwave oven can be improved. The weight of proposed transformer is about one sixth of conventional one and efficiency is improved by seven percent compared to the efficiency of the conventional system.

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