Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on the Design of Amplifier for Microwave using GaAs FET

GaAs FET를 이용한 초고주파용 증폭기 설계에 관한 연구

  • 김용기 (광운대학교 전자통신공학과) ;
  • 이승무 (광운대학교 전자통신공학과) ;
  • 홍의석 (광운대학교 전파공학과)
  • Published : 1992.02.01
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Abstract

Recently, SSPAs(Solid-State Power Amplifiers) with high linearity and efficiency replace TWTAs (Traveling-Wave-Tube Amplifiers) in satellite transponders. In this paper, a power amplifier with maximum output power is designed and constructed using GaAs FET(MGF-1302) as a test model for the development of SSPAs. For conjugate matching of input and output network, transimission lines and stubs are optimized using microwave CAD program, LINMIC+. Power amplifier is realized on the teflon substrate($\in$S1rT=2.45) with a bandwidth of 1GHz at a center frequency of 8GHz. Maximum stable gain of simulation and simulation and experimental result is obtained 9.23, 7.65 dB, respectively.

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