• 제목/요약/키워드: Microwave Devices

검색결과 220건 처리시간 0.03초

MMIC상에서 주기적으로 배치된 용량성 소자를 이용한 단파장 전송선로 (A Short Wavelength Transmission Line Employing Periodically Arrayed Capacitive Devices on MMIC)

  • 정장현;강석엽;윤영
    • Journal of Advanced Marine Engineering and Technology
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    • 제34권6호
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    • pp.840-845
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    • 2010
  • 본 논문에서는 MMIC상에서 온칩용 수동소자 제작을 위해서, 주기적으로 배치된 용량성 소자를 이용한 단파장 전송선로를 제안하였다. 제안된 PACD(periodically arrayed capacitive devices) 선로 구조는 기존의 마이크로스트립 선로에 비해 매우 짧은 선로파장 특성을 보였다. PACD 선로 구조는 주파수 5GHz에서 기존의 마이크로스트립 선로 파장의 8%의 파장단축 효과를 보였고, PPGM구조의 선로 파장의 38%의 파장단축 효과를 나타내었다. 이러한 PACD선로 구조는 MMIC상에서 온칩용 수동소자 제작에 유용한 특성으로 판단된다.

Performance Improvement of Power Control System for Driving MGT

  • Lee Sung-Geun
    • Journal of Advanced Marine Engineering and Technology
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    • 제29권7호
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    • pp.744-749
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    • 2005
  • This paper describes the performance improvement of power control system of magnetron (MGT) for microwave oven. The MGT is used extensively in household microwave oven and industrial microwave heating devices, and is operated by 3.0[kV] $\∼$5.0[kV] dc high voltage. The proposed power supply is consisted of a bridge rectifier, step-up converter(SUC) and its controller, half bridge inverter(HBI) and its controller, and full wave double voltage rectifier(DVR). In the proposed system, a good power factor can be obtained by the SUC' switching method that the inductor current waveforms follows that of the rectified voltage, and a line input power can be controlled to a range of 17.5[$\%$] by duty ratio (DR) adjustment of the HBI.

Microwave GaAs MESFET의 특성해석 Modeling에 관한 연구 (A Study on the Modeling of Microwave GaAs MESFETs)

  • 이현석;임경문;조호열;김영식;성만영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1992년도 하계학술대회 논문집 B
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    • pp.839-842
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    • 1992
  • This paper describes an improved analytic model for a gallium-arsenide MESFET computer simmulation and deals with application to microwave performance. The current-voltage characteristics, the dependence of the capacitances, transconductances and drainconductances on bias conditions and the dependences of s-parameters on various frequencies are calculated. The model is base on a physical picture revealed through two-dimensional numerical analysis, and takes into account transition region and diffusion process under gate but it require a very small computer time. Simulation results agree well with the experimental data found earlier by other author The proposed model can be used for a computer-aided design of GaAs MESFET devices and for a study of application to microwave performance.

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Series Resonant ZCS- PFM DC-DC Converter using High Frequency Transformer Parasitic Inductive Components and Lossless Inductive Snubber for High Power Microwave Generator

  • Kwon, Soon-Kurl;Saha, Bishwajit;Mun, Sang-Pil;Nishimura, Kazunori;Nakaoka, Mutsuo
    • Journal of Power Electronics
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    • 제9권1호
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    • pp.18-25
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    • 2009
  • Conventional series-resonant pulse frequency modulation controlled DC-DC high power converters with a high-frequency transformer link which is designed for driving the high power microwave generator has the problem of hard switching commutation at turn-on and turn-off of active power switching devices. This problem is due to the influence of the magnetizing current of the high-frequency transformer. This paper presents a novel prototype for a high-frequency transformer using parasitic parameters with a lossless inductive snubber and a series resonant capacitor assisted series-resonant zero current switching pulse frequency modulated DC-DC power converter, which is designed using a high power magnetron for microwave ovens. In order to implement a complete and efficient soft switching commutation, the performance of the new converter topology is practically confirmed and evaluated in the prototype of a power microwave generator.

마이크로파 근접장 현미경을 이용한 유기 발광소자내 dark spot 연구 (Investigation of dark spots in organic light emitting diodes by using a near-field scanning microwave microscope)

  • 윤순일;유현준;박미화;김송희;이기진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.494-497
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    • 2003
  • We report the dark spots in organic light emitting diodes by using a near-field scanning microwave microscope. Devices structure was glass / indium-tin-oxide(ITO) / copper-pthalocyiane(Cu-Pc) / tris-(8-hydroquinoline)aluminum(Alq3) / aluminum(Al). We made artificial dark spots by using a etching technique on a ITO substrate. Near-field scanning microwave microscope images and reflective coefficient of dark spots were measured and compared by the change of various applied voltage changes 0-15V.

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One-step microwave synthesis of surface functionalized carbon fiber fabric by ZnO nanostructures

  • Ravi S. Rai;Vivek Bajpai
    • Advances in nano research
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    • 제14권6호
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    • pp.557-573
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    • 2023
  • The rapid growth of zinc-oxide (ZnO) nanostructures (NSs) on woven carbon fiber (WCF) is reported in this study employing a microwave-aided chemical bath deposition process. The effects of different process parameters such as molar concentration, microwave duration and microwave power on morphologies and growth rate of the ZnO on WCF were studied. Furthermore, an attempt has been taken to study influence of different type of growth solutions on ZnO morphologies and growth rates. The surface functionalization of WCF fabrics is achieved by successful growth of crystalline ZnO on fiber surface in a very short duration through one-step microwave synthesis. The morphological, structural and compositional studies of ZnO-modified WCF are evaluated using field-emission scanning electron microscopy, X-ray diffraction and energy dispersive X-ray spectroscopy respectively. Good amount of zinc and oxygen has been seen in the surface of WCF. The presence of the wurtzite phase of ZnO having crystallite size 30-40 nm calculated using the Debye Scherrer method enhances the surface characteristics of WCF fabrics. The UV-VIS spectroscopy is used to investigate optical properties of ZnO-modified WCF samples by absorbance, transmittance and reflectance spectra. The variation of different parameters such as dielectric constants, optical conductivity, refractive index and extinction coefficient are examined that revealed the enhancement of optical characteristics of carbon fiber for wide applications in optoelectronic devices, carbon fiber composites and photonics.

IGFET 채널 전류 밀도의 공간 변조 현상에 관한 연구 (Space Modulation of the Channel Current Density in IGFET by the Polarized Metal Gates)

  • 라극환
    • 대한전자공학회논문지
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    • 제21권4호
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    • pp.31-36
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    • 1984
  • 지난 수십년동안 많은 자학자들에 의해 초고주파대에서 부성 임피던스를 갖는 반도체 소자들이 개발되어 왔으나 이 소자들은 진공관 소자에 비하여 매우 낮은 출력으로 동작되고 있다. 그러므로 본 논문에서는 절연된 반도체 위에 주기적인 복수 게이트를 가진 MOSFET를 제안하여 연구하였다. 채널에 인하여 게이트상에 전압분포를 유기하고 이와같이 게이트 사이에 야기된 전위차는 채널에서 캐리어의 속도 또는 전류밀도의 공간변조를 일으키게 됨을 입증하여 이 소자가 고출력의 초고주파용 소자로 동작할 수 있는 가능성을 연구한다.

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마이크로파 가변 소자용 K-band Coplanar Stripline 공진기 설계 (K-band Coplanar Stripline Resonator for Microwave Tunable Devices)

  • 강종윤;윤석진;김현재
    • 한국전기전자재료학회논문지
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    • 제18권6호
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    • pp.532-537
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    • 2005
  • In order to develop a tunable resonator which can be easily operated by DC bias and applied for microwave tunable filters and devices using ferroelectric thin or thick films, the non conductor backed-and conductor backed- coplanar stripline resonators have been designed and analyzed. They have been designed to be operated at 25 GHz which involve coplanar stripline input and output ports. The resonators have been simulated and analyzed using Ansoft HFSS. The research has been focused on the Quality factor of the coplanar stripline resonator. The conductor Q, box Q, and radiation Q of the resonators have been analyzed and calculated according to the substrate thickness & conductor width of the resonators. From these parameters, the loss factors of the coplanar stripline resonator have been investigated. The conducting Q of the coplanar stripline resonator has no relation with the thickness of dielectric substrate and increases as the conductor width increases. The box Q has no much relation with the thickness of substrate and the conductor width, which is above 2000. The radiation loss increases as the thickness of substrate and the conductor width increase. To decrease the radiation loss of the coplanar stripline resonator, a conductor backed coplanar stripline resonator has been proposed which has the unloaded Q of 170.

GaN-SBD를 이용한 RF-DC 변환기 회로 분석 (An Analysis of RF-DC Converter Circuits with GaN Schottky Barrier Diodes)

  • 손명식
    • 반도체디스플레이기술학회지
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    • 제20권4호
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    • pp.68-71
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    • 2021
  • In this paper, GaN-SBD devices with excellent breakdown voltage and frequency characteristics for use in high-power microwave wireless power transmission has been modeled for PSpice circuit simulation. The RF-DC conversion circuits were simulated and compared with a commercial Si-SBD device. Although the modeled GaN-SBD devices had lower RF-DC conversion efficiency compared to Si-SBD at 2.4 and 5.8 GHz, it was confirmed through PSpice circuit simulations that they can be used sufficiently according to the required application circuit in a high power situation.

광효과를 이용한 GaAs MESFET의 광 제어 (Optical Control of GaAs MESFET with Optical Effect)

  • 이승엽;장용성;문호원;박한규
    • 대한전자공학회논문지
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    • 제26권12호
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    • pp.2025-2031
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    • 1989
  • In this paper, using optical effect of characteristics of GaAs compound, two potential application of optical controlled GaAs MESFET are demonstrated` detector, microwave amplifier gain control. These lead to the possibility of the interaction with optical devices. The preliminary experiments show the light induced voltage, the increase in the drain currnet and the change in the microwave scattering parameters of GaAs MESFET under optical illumination(He-Ne laser). And imcrowave amplifier gain is round to be varied with changing in intensity of optical illumination.

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