• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}Sr_{0.4}TiO_{3}(BST)$ films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}Sr_{x}TiO_{3}$ (x = 0.1 - 0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}Sr_{0.3}TiO_{3}$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}$S $r_{x}$Ti $O_3$(x=0.1-0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}$S $r_{0.3}$Ti $O_3$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.00 nm.m.m.m.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.3
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• pp.348-351
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• 2013

Recently, a brain imaging system with microwave devices has been proposed. The brain imaging system requires a small antenna which has ultra wide band(UWB) operating frequency bandwidth(0.5~2 GHz) and non-varying boresight of antenna over the frequency band. This paper proposes asymmetric corrugations on a tapered slot antenna (TSA) so that the size of the TSA is reduced by 14 % while 10 dB return loss bandwidth is satisfied over the operating frequency band from 0.5 GHz to 2 GHz. A miniaturized TSA with symmetric corrugations shows tilted boresight whilst frequency is getting lower; however, the proposed TSA with asymmetric corrugations maintains direction of boresight for different frequencies. This enhancements make an asymmetric corrugated TSA meet the requirement of the brain imaing system.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.484-488
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• 2001

The grid voltage of commercial utility power source hi Japan and USA is 100rms, but in China and European countries, it is 200rms. In recent years, In Japan 200Vrms out putted single phase three wire system begins to be used for high power applications. In 100Vrms utility AC power applications and systems, an active voltage clamped quasi-resonant Inverter circuit topology using IGBTs has been effectively used so far for the consumer microwave oven. In this paper, presented is a half bridge type voltage-clamped high-frequency Inverter type AC-DC converter using which is designed for consumer magnetron drive used as the consumer microwave oven in 200V utility AC power system. This zero voltage soft switching Inverter can use the same power rated switching semiconductor devices and three-winding high frequency transformer as those of the active voltage clamped quasi-resonant Inverter using the IGBTs that has already been used for 100V utility AC power source. The operating performances of the voltage source single ended push pull type Inverter are evaluated and discussed for consumer microwave oven. The harmonic line current components In the utility AC power side of the AC-DC power converter operating at ZVS­PWM strategy reduced and improved on the basis of sine wave like pulse frequency modulation and sine wave like pulse width modulation for the utility AC voltage source.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.4
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• pp.442-450
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• 2014

This paper is a study of the propagation characteristic of matching liquids in the skin-covered breast model. In order to evaluate the matching liquids, we investigated six kinds of matching liquids applied to proposed 1-D breast model from frequency range of 3~6 GHz. A uniform plane wave is projected / transmitted inside the multi-layered breast model. Then the propagation characteristics inside the model and the transmission loss of each matching liquids were analyzed. The studying method presented in the paper can be used in the breast cancer detection system, the field of cancer detection using human tissue and the field of other medical devices. This paper was applied to the breast cancer detection system. Consequently, these studies could be used to determine the suitable type of matching liquids for breast cancer detection system and to apply useful for performance analysis.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.37-42
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• 2004

In the electronic components and devices fabrication, thin film resistors with low TCR (temperature coefficient of resistance) and high precision have been used over 3 ㎓ microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because they have low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of S-type with excellent resistors properties by RF-sputtering. Also we reported the best annealing condition of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to annealing conditions($200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$)

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.775-779
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• 1998

The resonant frequency fo and unloaded quality factor Qu of CoTi-substituted Barium ferrites($\textrm{BaCo}_{x}\textrm{Ti}_{x}\textrm{Fe}_{12-2x}\textrm{O}_{19}$, $1.0\leq\textrm{x}\leq5.0$) were measured at frequencies between 5 to 10GHz using the paralleled copper-plate wave guide method. The measurements showed that the permittivities of CoTi-substituted Barium ferrites(CoTi-BF) increased from 14.7 to 23.4 with the contents of CoTi, x, and the loss tangents had values of $\textrm{10}^{-3}$ order. From these results, CoTi-BF are considered to be very promising materials in microwave devices such as dielctric resonator antennas.

• Journal of Advanced Navigation Technology
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• v.24 no.6
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• pp.601-606
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• 2020

In this paper, we designed a microstrip patch antenna that can be applied to the Wimax/LTE 5G system among wireless media usable in coastal ships. The substrate of the proposed antenna is FR-4 (er=4.3), the size is 22 mm × 30 mm, and it can be used in the 3.5 GHz and 5.8 GHz bands of Wimax/LTE 5G by constructing a simple structure using a microstrip patch antenna. CST Microwave Studio 2014 was used for simulation, and the gain of the simulation result is 2.41dB at 2.4 GHz and 3.96 dB at 3.5 GHz. S-Parameter also showed a result of less than -10 dB (VSWR 2:1) in the desired frequency band, and designed a small variable and a miniaturized antenna so that the antenna can be used in mobile phones or electronic devices.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.7 no.5
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• pp.980-997
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• 2013

Nowadays, wireless communication has a great advantage in technology. We use wireless devices almost in all expected life such as: entertainment, working and recently in the healthcare area, where Wireless Body Area Networks (WBANs) become a hot topic for researchers and system designers. Recent work on WBANs focus on related issues to communication protocol, especially ZigBee network is fine tuned to meet particular requirements in healthcare area. For example, some papers present real-time patient monitoring via ZigBee communication given the short distance between body sensors and remote devices, while the other work solve the limited coverage problem of Zigbee by designing mechanisms to relay Zigbee data to other types of wire or wireless infrastructure. However, very few of them investigate the scenarios of ZigBee coexisting or integrated with other networks. In this paper, we present the real-time data transmission from ZigBee end devices to Wide Area Network (WAN), Worldwide interoperation for microwave access network (WiMAX) and Long Term Evolution network (LTE). We provide in detail the ZigBee gateway components. Our simulation is conducted by OPNET, we visualize many topology network scenarios in ZigBee hybrid system. The results in simulation show that ZigBee end devices can successfully transmit data in real-time to other network end devices.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.715-723
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• 2006

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.