• Journal of Power Electronics
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• 제5권4호
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• pp.257-263
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• 2005

This paper describes the development and testing results of a high density High Voltage Power Supply (HVPS) that drives microwave Traveling Wave Tubes (TWTs) of phased array transmitters for airborne EW systems. The HVPS is designed to consist of a number of modules connected in series. Among them, especially, the high-density pulse transformer module including the resonant circuit is newly designed to make the HVPS much more reliable. In addition, this paper describes the development of high voltage solid-state modulation using fast switching devices (FETs) and also represents the test results of a modulator module.

• ETRI Journal
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• 제26권4호
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• pp.307-314
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• 2004

The application of a discrete pseudomorphic high electron mobility transistor (p-HEMT) as a grounded switch allows for the development of low cost phase shifters and phase modulators operating in a Ku band. This fills the gap in the development of phase control devices comprising p-i-n diodes and microwave monolithic integrated circuits (MMICs). This paper describes a discrete p-HEMT characterization and modeling in switching mode as well as the development of a low-cost four-bit phase shifter and direct quadrature phase shift keying (QPSK) modulator. The developed devices operate in a Ku band with parameters comparable to commercially available MMIC counterparts. Both of them are CMOS compatible and have no power consumption. The parameters of the QPSK modulator are very close to the requirements of available standards for satellite earth stations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.366-370
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• 2002

GaAs has become a very popular material for the fabrication of high frequency, low noise and microwave power devices. GaAs devices are also well suited for high temperature operation because of the large band gap of this material. The standard GaAs technology and device structures have to be modified for stable operation at high temperature. In this paper, AlGaAs/GaAs HBT considering stable ohmic contact at high temperature as well as thermal effect such as self-heating effect are introduced. All the data obtained study will be used as input data for the simulator and the result will be compared with an analytical model available in this study,

• 전자공학회논문지A
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• 제29A권8호
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• pp.41-48
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• 1992

The characteristics of traveling-wave electrodes for high-frequency electroptic integrated devices are described from the view point of improvement of phase-matching based on the conformal mapping method. Specific calculations of the characteristic impedance, effective microwave index, and eletrode loss for asymmetric coplanar strip(ACPS) and coplanar waveguide(CPW) electrode structures are presented as a function of the geometric electrode parameters including the electrode thickness and buffer layer thickness. 5-10(x10S0-6Tm) thick Au-ACPS electrodes were successfully fabricated by electroplating and ECR etcher. The improvement of modulation bandwidth can be theoretically observed from the combination of electrode and buffer layer thickness.

• ETRI Journal
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• 제17권2호
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• pp.11-19
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• 1995

The plasma densities generated from a semiconductor bridge (SCB) device employing a capacitor discharge firing set have been measured by a novel diagnostic technique employing a microwave resonator probe. The spatial resolution of the probe is comparable to the separation between the two wires of the transmission lines (${\approx}$3 mm). This method is superior to Langmuir probes in this application because Langmuir probe measurements are affected by sheath effects, small bridge area, and unknown fraction of multiple ions. Measured electron densities are related to the land material and input energy. Although electron densities in the plasma generated by aluminum or tungsten-land SCB devices show a general tendency to increase steadily with power, at the higher energies, the electron densities generated from tungsten-land SCB devices are found to remain constant.

• 전자공학회논문지A
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• 제32A권3호
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• pp.110-117
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• 1995

New formulas for the minimum noise figure and the optimum source impedance of microwave FETs are derived using the noise equivalent circuits obtained from the steady-state Nyquist theorem for multi-terminal semiconductor devices. The derived formulas manifest the relationships between the noise sources and the physical parameters of a noise equivalent circuit. Furthermore the formulas can explain the effect of gate leakage current on the minimum noise figure and the optimum source impedance. comparisons with the published experimental data confirm the validity and usability of our formula.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권1호
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• pp.74-81
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• 2004

We propose a novel scheme to transmit high center frequency RF signals using electroabsorption devices (EADs) as frequency converters at the transmitter and the receiver. In this approach frequency heterodyning is employed for obtaining high center frequency. With the EAD as a detector/mixer at the receiver we demonstrated a smaller conversion loss than that of the conventional modulator/mixer. With EAD as a modulator/mixer at the transmitter and with two heterodyned lasers to generate an optical local oscillator (LO), we demonstrated a large reduction (${\sim}23dB$) in conversion loss, and the transmission is not limited by the optical saturation of the EAD. This transmission scheme has optical single-side-band transmission feature which greatly relieves the fiber dispersion effect.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.63.1-63.1
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• 2012

In recent years, the functional inks for printed electronics that can be combined with a variety of printing techniques have attracted increasingly significant interest for use in low cost, large area, high performance integrated electronics and microelectronics. In particular, the development of solution-processable conductor, semiconductor and insulator materials is of great importance as such materials have decisive impacts on the electrical performance of various electronic devices, and, therefore, need to meet various requirements including solution processability, high electrical performance, and environmental stability. Semiconductor inks such as IGO, CIGS are synthesized by chemical solution method and microwave reaction method for TFT and solar cell application. Fine circuit pattern with high conductivity, which is valuable for flexible electrode for PCB and TSP devices, can be printed with highly concentrated and stabilized conductor inks such as silver and copper. Solution processed insulator such as polyimide derivatives can be use to all printed TFT device. Our research results of functional inks for printed electronics provide a recent trends and issues on this area.

• Journal of information and communication convergence engineering
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• 제2권3호
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• pp.149-152
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• 2004

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from $27^{\circ}C\;to\;300^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.

• 한국광학회지
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• 제16권5호
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• pp.469-475
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• 2005

본 논문에서는 코히런트하게 결합되는 폴리머 마이크로링 공진기를 이용한 광학적 방식의 마이크로웨이브 대역통과 필터를 제안하고 구현하였다. 제안된 소자는 소형이며 구조가 간단하고, 열광학 및 전기광학 효과를 통한 중심주파수 변화가 용이하고, 그리고 다른 전기소자나 광소자와의 집적성 등이 뛰어나다. 특히, 이 공진기는 마이크로웨이브 신호를 수반하는 광신호를 효과적으로 필터링하기 위해 아주 작은 대역폭을 갖도록 설계되었다. 본 논문에서는 한 개의 링과 두 개의 링으로 구성된 공진기를 각각 제작하여 특성을 확인하였다. 링 공진기의 측정된 전달 특성을 이론적으로 fitting하였으며, 이로부터 제안된 마이크로웨이브 필터의 특성을 정확하게 예측하였다. 공진기의 링 수가 증가할수록 대역폭은 감소하고 롤오(roll-off) 특성이 향상되며 대역 소멸비가 증가함을 알 수 있었다. 측정된 대역통과 필터의 중심주파수는 $\~10GHz$였고 3-dB 대역폭은 $\~0GHz$였다. 그리고 Q값(quality factor)은 $\~10$이었고 통과대역의 소멸비는 약 25dB였다.