• Applied Microscopy
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• v.30 no.3
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• pp.249-254
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• 2000

We investigated the microstructure, electrical property, and magnetic property of Co/Al multilayer after annealing treatment. CoAl was formed during depositing Co/Al multilayer due to the interfacial reaction. After annealing treatment, $Co_2Si$ was formed at the Co/Si interface. The sheet resistance of Co 2 nm/Al 2 nm multilayer have the lowest value and the Rs of multilayer decreased with the increase of annealing temperature due to the formation of $Co_2Si$ phase. The Ms of 2 nm Co/2 nm Al multilayer have the lowest value and the Ms of multilayer increased with the increase of film thickness.