Ferroelectric Properties of Bi3.25La0.75 Ti3O12 Thin Films with Excess Bi Contents for Non-Volatile Memory Device Application (비휘발성 메모리 소자응용을 위한 과잉 Bi 첨가에 따른 BLT 박막의 강유전 특성)
-
- Journal of the Korean Institute of Electrical and Electronic Material Engineers
- /
- v.15 no.9
- /
- pp.764-769
- /
- 2002