• Title/Summary/Keyword: Micro-leakage

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BOND STRENGTH AND MICROLEAKAGE IN RESIN BONDING TO TOOTH STRUCTURE (치질접착에서 접착강도와 변연누출)

  • Kim, Jin-Hee;Park, Jeong-Won;Park, Jin-Hoon;Kim, Sung-Kyo
    • Restorative Dentistry and Endodontics
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    • v.24 no.4
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    • pp.570-577
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    • 1999
  • Intuitively, higher bond strengths should result in less leakage. However, the relationship between bond strengths and microleakage value is complex and not clearly understood. The purpose of this study was to evaluate the relationship between tensile bond strengths and microleakage values in the same restorations to understand the behavior of resin bonding to tooth structure. One-hundred and twenty enamel or dentin specimens from freshly extracted bovine mandibular incisors were used. The specimen was treated with 32% phosphoric acid for 15 seconds and rinsed for 20 seconds. the teeth were divided into four groups by means of wet bonding technique or dry bonding. One-Step$^{TM}$ adhesive were applied to the specimen. The specimens were immersed in 2% methylene blue solution for 7 days, and tensile bond strength and microleakage were measured. The results were as follows: 1. Significant negative correlation was found between bond strengths and micro leakage values. Hence, higher bond strengths seem to be associated with lower microleakage, and vice versa (r=-0 50, p<0.05). 2. The Enamel/Wet group showed significantly higher bond strength than Enamel/Dry one, and Dentin/Wet group showed higher strength than Dentin/Dry one (p<0.05). 3. Microleakage was significantly less ill wet bonding than in dry one at dentin (p<0.05), however, there was no significant difference between wet and dry bonding at enamel (p>0.05).

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Suppression of misfit dislocations in heavily boron-doped silicon layers for micro-machining (마이크로 머시닝을 위한 고농도로 붕소가 도핑된 실리콘 층의 부정합 전위의 억제)

  • 이호준;김하수;한철희;김충기
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.2
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    • pp.96-113
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    • 1996
  • It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.

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Numerical Modelling for the Dilation Flow of Gas in a Bentonite Buffer Material: DECOVALEX-2019 Task A (벤토나이트 완충재에서의 기체 팽창 흐름 수치 모델링: DECOVALEX-2019 Task A)

  • Lee, Jaewon;Lee, Changsoo;Kim, Geon Young
    • Tunnel and Underground Space
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    • v.30 no.4
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    • pp.382-393
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    • 2020
  • The engineered barrier system of high-level radioactive waste disposal must maintain its performance in the long term, because it must play a role in slowing the rate of leakage to the surrounding rock mass even if a radionuclide leak occurs from the canister. In particular, it is very important to clarify gas dilation flow phenomenon clearly, that occurs only in a medium containing a large amount of clay material such as a bentonite buffer, which can affect the long-term performance of the bentonite buffer. Accordingly, DECOVALEX-2019 Task A was conducted to identify the hydraulic-mechanical mechanism for the dilation flow, and to develop and verify a new numerical analysis technique for quantitative evaluation of gas migration phenomena. In this study, based on the conventional two-phase flow and mechanical behavior with effective stresses in the porous medium, the hydraulic-mechanical model was developed considering the concept of damage to simulate the formation of micro-cracks and expansion of the medium and the corresponding change in the hydraulic properties. Model verification and validation were conducted through comparison with the results of 1D and 3D gas injection tests. As a result of the numerical analysis, it was possible to model the sudden increase in pore water pressure, stress, gas inflow and outflow rate due to the dilation flow induced by gas pressure, however, the influence of the hydraulic-mechanical interaction was underestimated. Nevertheless, this study can provide a preliminary model for the dilation flow and a basis for developing an advanced model. It is believed that it can be used not only for analyzing data from laboratory and field tests, but also for long-term performance evaluation of the high-level radioactive waste disposal system.