• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.171-175
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics and metal, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter level dielectrics and metal. Especially, defects like (micro-scratch) lead to severe circuit failure, and affects yield. Current conditioning method - bladder type, orbital pad motion - usually provides unsuitable pad profile during ex-situ conditioning near the end of pad life. Since much of the pad wear occurs by the mechanism of bladder tripe conditioning and its orbital motion without rotation, we need to implement new ex-situ conditioner which can prevent abnormal regional force on pad caused by bladder-type and also need to rotate the pad during conditioning. Another important study of ADPC is related to the orbital scratch of which source is assumed as diamond grit dropped from the strip during ex-situ conditioning. Scratch from diamond grit damaged wafer severely so usual1y scraped. Figure 1 shows the typical shape of scratch damaged from diamond. We suspected that intensive forces to the edge area of bladder type stripper accelerated the drop of Diamond grit during conditioning, so new designed Flat stripper was introduced.

• Journal of Mechanical Science and Technology
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• 제18권10호
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• pp.1772-1781
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• 2004

The mechanical as well as tribological characteristics of coating films as thin as a few nm become more crucial as applications in micro-systems grow. Especially, the amorphous carbon film has a potential to be used as a protective layer for micro-systems. In this work, quantitative evaluation of nano-indentation, scratching, and wear tests were performed on the 7nm thick amorphous carbon film using an Atomic Force Microscope (AFM). It was shown that AFM-based nano-indentation using a diamond coated tip can be feasibly utilized for mechanical characterization of ultra-thin films. Also, it was found that the critical load where the failure of the carbon film occurred was about 18${\mu}$N by the ramp load scratch test. Finally, the wear experimental results showed that the quantitative wear rate of the carbon film ranged 10$\^$-9/～10$\^$-8/ ㎣ /N cycle. These experimental methods can be effectively utilized for a better understanding the mechanical and tribological characteristics at the nano-scale.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.119-120
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• 2008

ILD CMP process has been well accepted for the planarization of the dielectric oxide film and becomes a critical process in ULSI manufacturing due to the rapid shrinkage of the design rule for the device. In total manufacturing process steps for a device, the proportion of ILD CMP process has been gradually increased. Ever since ILD CMP has been introduced, the scratches have been a major defects on polished surfaces which cause the electrical shorts between vias or metal lines [1,2]. It was reported that micro-scratches are caused by large, irregularly shaped particles during CMP process. Therefore, most of the CMP users have used < 5 m POU filter to remove and reduce the scratch source from the slurry. However, the scratch has always been the biggest concern in ILD polishing whatever preventive actions are taken. Silica and ceria slurries are widely used for ILD CMP process. There are not much differences in generated scratches and their formation mechanism. In this study, the scratches were investigated as a function of polishing conditions with possible explanation on formation mechanism in ILD CMP.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2005년도 추계학술대회 논문집
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• pp.186-189
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• 2005

This paper was designed to assess the adhesive properties of hard coatings on non-nitrided and nitrided various tool steels. Estimations of adhesion were done to scratch test which is mainly used in hard coating. The critical load(Lc) between coating and substrate is defined through analysis of frictional load vs. normal load curve, signals of acoustic emission and optical observations. Coatings employed in this study are TiN, CrN and TiAlN, tools as substrates are STD11, STD61 and SKH51. It was classified to substrates with/without nitrided layer and hard coatings on substrate were deposited by arc PVD. Results showed that harder substrates and coatings give higher values of critical loads.

• 한국전기전자재료학회논문지
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• 제20권9호
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• pp.749-755
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• 2007

Recently, novel MEMS probe cards can support reliable wafer level chip test with high density probing capacity. However, manufacturing cost and process complexity are crucial weak points for low cost mass production. To overcome these limitations, we have developed micro spring structured MEMS probe card. For fabrication of micro spring module, a wire bonder and electrolytic polished gold wires are used. In this case, stringent tension force control is essential to guarantee the low level contact resistance of micro spring for reliable probing performance. For this, relation between tension force of fabricated probe card and contact resistance is characterized. Compare to conventional probe cards, developed MEMS probe card requires fewer fabrication steps and it can be manufactured with lower cost than other MEMS probe cards. Also, due to the small contact scratch patterns, we expect that it can be applied to bumping types chip test which require higher probing density.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.703-703
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• 2001

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.707-713
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was requirdfo the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gest thinner, micro-scratches are becoming as major defects. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}{\textrm}{m}$ point of use (POU) filter, which is depth-type filter and has 80% filtering efficiency for the 1.0${\mu}{\textrm}{m}$ size particle. In this paper, we studied the relationship between defect generation and polished wafer counts to understand the exact efficiency fo the slurry filteration, and to find out the appropriate pad usage. Our experimental results showed that it sis impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the slurry flow rate, and to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of depth type filter.

• 한국표면공학회지
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• 제34권4호
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• pp.327-336
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• 2001

The skinpassing conditions such as roll type, roll force and roll roughness of the work roll were evaluated to give the surface properties of the galvanized steel sheets that were required for automotive and to get rid of the surface defects that caused with the bad control of galvanized coating process parameters. The surface defects of the galvanized steel sheets such as the ripple mark and the scratch were completely removed as the roll force of SPM work roll was increased and the amount of the transfer of roll surface texture to the strip was also gained a lot. The image clarity of electro discharge textured (EDT) coated steel sheets before and after painting was higher than that of the bright (BRT) and shot blasted (SBT) coated steel sheets because of higher PPI value, lower waviness and uniform surface pattern. Since micro-craters transferred on the surface of the galvanized steel sheets played a role of nucleation sites of chromate reaction, Increase of micro-craters was bring to better corrosion resistance with the increase of the roll force and the use of EDT roll at the skin pass mill.

• 한국표면공학회지
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• 제54권6호
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• pp.307-314
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• 2021

Diamond-like carbon (DLC) is difficult to achieve sufficient adhesion because of weak bonding between DLC film and the substrate. The purpose of this study is to improve the adhesion between substrate and DLC film. DLC film was deposited on AISI H13 using linear ion source. To improve adhesion, the substrate was treated by dual post plasma nitriding. In order to define the mechanism of the improvement in adhesive strength, the gradient layer between substrate and DLC film was analyzed by Glow Discharge Spectrometer (GDS) and Scanning Electron Microscope (SEM). The microstructure of the DLC film was analyzed using a micro Raman spectrometer. Mechanical properties were measured by nano-indentation, micro vickers hardness tester and tribology tester. The characteristic of adhesion was observed by scratch test. The adhesion of the DLC film was enhanced by active screen plasma nitriding layer.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1507-1510
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• 2005

This study was carried out as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-\mu{m}-deep$ indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.49 GPa and 100 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46-0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined area during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.