• Title/Summary/Keyword: Micro fet2

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Realization of 1D-2DEG Composite Nanowire FET by Selective Area Molecular Beam Epitaxy (선택적 분자선 에픽택시 방법에 의한 1D-2DEG 혼성 나노선 FET의 구현)

  • Kim, Yun-Joo;Kim, Dong-Ho;Kim, Eun-Hong;Seo, Yoo-Jung;Roh, Cheong-Hyun;Hahn, Cheol-Koo;Ogura, Mutsuo;Kim, Tae-Geun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.11
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    • pp.1005-1009
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    • 2006
  • High quality three-dimensional (3D) heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate to improve the efficiency of tarrier transport. MBE growth parameters such as substrate temperature, V/III ratio, growth ratio, group V sources (As2, As4) were varied to calibrate the selective area growth conditions and the 3D GaAs-AlGaAs heterostructures were fabricated into the ridge type and the V-groove type. Scanning micro-photoluminescence $({\mu}-PL)$ measurements and the following analysis revealed that the gradually (adiabatically) coupled 1D-2DEG (electron gas) field effect transistor (FET) system was successfully realized. These 3D-heterostructures are expected to be useful for the realization of high-performance mesoscopic electronic devices and circuits since it makes it possible to form direct ohmic contact onto the (quasi) 1D electron channel.

Realization of 1D-2DEG Composite Nanowire FET by Selective Area Molecular Beam Epitaxy (선택적 분자선 에피택시 방법에 의한 1D-2DEG 혼성 나노선 FET의 구현)

  • Kim, Yun-Joo;Kim, Eun-Hong;Seo, Yoo-Jung;Kim, Dong-Ho;Hahn, Cheol-Koo;Ogura, Mutsuo;Kim, Tae-Geun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.167-168
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    • 2006
  • High quality 3D-heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate. MBE growth parameters such as substrate temperature, V/III ratio, growth ratio, group V sources ($As_2$, $As_4$) were varied to calibrate the selective area growth conditions. Scanning micro-photoluminescence ($\mu$-PL) measurements and following analysis revealed that the gradually (adiabatically) coupled 2DEG-1D-1DEG field effect transistor (FET) system was realized. This 3D-heterostructure is very promising for the realization of the meso-scopic electronic devices and circuits since it makes it possible to form direct ohmic contact to the (quasi) 1DEG.

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The Design and Implementation of SSPA(Solid State Power Amplifier) using chip device (Chip소자를 이용한 SSPA 설계 및 제작에 관한 연구)

  • Kim Yong-Hwan;Min Jun-ki;Kim HyunJin;Yoo Hyeong-soo;Lee Hyeong-kyu;Hong Ui-seok
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.2 no.2 s.3
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    • pp.65-72
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    • 2003
  • In this work a 6-stage hybrid power amplifier which can be used for the wireless communication systems for MMC(hficrowave Micro Cell) and ITS wireless communication system is designed and fabricated. Ihe power amplifier's each stages was fabricated Hetero-junction Power FET of bare chip type and an alumina substrate with $\varepsilon_{r}$=9.9 and 15-mil thickness. The measured results of power amplifier module showed 33.2$\~$36.5 dB small signal gain, 33.0$\~$34.0 dBm output power at forward frequency (17.6 GHa $\~$ 17.9 CHz) and 36.0$\~$37.0 dB small signal gain, 33.0$\~$34.5 dBm output power at reverse frequency (19.0 GHz $\~$19.2GHz).

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Fabricationof small size catridge for electrolyte measurement including flow-channel and microsensors (Flow-channel과 microsensor를 내장한 전해질 측정용 소형 카트리지 제작)

  • 이영철;조병욱;김창수;고광락;손병기
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.4
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    • pp.78-83
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    • 1998
  • A small size cartrideg for FET type electrolyte sensor is designed and faricated with much simplified process by using micromachining tenchiques such as silicon etching andglass bonding. Size of the whole cartideg is 2.4cm*2.5cm, and the dead volume of a micro flow-channel in the cartrideg is only 8.5.mu.l. The photosensitive polymer(THB 30) is used to define a micropool and to encapsulate the sensor surface for standardizationof electrolyte sensors. To miniaturize micro flow-channel conventional reference electrode(Ag/AgCl) a differential amplification is introduced using REFET and quasi reference electrode. Refet was fabricated using photosensitive polymer(OMR 83). The fabricated cartridge with built-in pH-ISFET showed good operational characteristics such as linearity and high sensitivity (55.4mV/pH) in a wide pH range(pH2-pH12).

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Characteristics of Ferroelectric Transistors with $BaMgF_4$ Dielectric

  • Lyu, Jong-Son;Jeong, Jin-Woo;Kim, Kwang-Ho;Kim, Bo-Woo;Yoo, Hyung-Joun
    • ETRI Journal
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    • v.20 no.2
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    • pp.241-249
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    • 1998
  • The structure and electrical characteristics of metal-ferroelectric-semiconductor FET(MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/drain electrodes and $BaMgF_4$ film as a gate dielectric. The polysilicon source and drain were built-up prior to the formation of the ferroelectric film to suppress a degradation of the film due to high thermal cycles. From the MFS capacitor, the remnant polarization and coercive field were measured to be about $0.6{\mu}C/cm^2$ and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I-V curves, while the current levels disperse probably due to film cracking or bad adhesion between the film and the Al electrode.

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MEMS TUNING ELEMENTS FOR MICRO/MILLIMETER-WAVE POWER AMPLIFIERS (마이크로/밀리미터파 대역에서 전력증폭기의 효율향상을 위한 MEMS 튜닝회로)

  • Kim Jae-Heung
    • 한국정보통신설비학회:학술대회논문집
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    • 2003.08a
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    • pp.269-271
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    • 2003
  • 초고주파/밀리미터파 대역에서 전력증폭기의 효율을 향상시키기 위해 MEMS 튜닝회로를 설계하였다. MEMS 튜닝회로의 효과를 확인하기 위해 2차 및 3차 고조파를 억제할 수 있도록 3-stub Class-E 증폭기를 설계하였으며 또한 설계된 증폭기에 대해 시뮬레이션을 실시하였다. 시뮬레이션의 결과로서 8GHz에서 14dBm입력에 대해 MEMS가 적용된 증폭기의 성능은 PAE=66 9%, drain efficiency=75.89%, 그리고 출력 P=23.37 dBm을 얻었다. 또한 FET의 기생리액턴스의 변화에 대해서 MEMS 튜닝회로의 효율증대효과를 확인하였다. 결론적으로 이 연구에서 제안된 새로운 방법을 통해 증폭기의 효율향상을 위한 효과적인 방법이 될 수 있음 보여 주었다.

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The Effects of ESWT and US on Muscle Power, Pain and Muscle Tension at Trigger Point of the Scapular Inter Angle (견갑골 내측 상부의 발통점에 체외충격파와 초음파 적용시 통증과 피부두께, 근력변화에 미치는 영향)

  • Lee, Seung-Hyub;Pi, Eo-Ra;Jung, Ha-Ney;Lee, Ho-Seok;Joo, Da-Sol;Lee, Seung-Hee;Choi, Min-Hee;Choi, Hyun-Ji;Hong, Young-In;Kim, Ji-Eun;Han, Sang-Wan
    • Journal of the Korean Academy of Clinical Electrophysiology
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    • v.7 no.1
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    • pp.29-34
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    • 2009
  • Purpose : This study aims to investigate into the change in muscle power, pain and muscle tension upon application of extracorporeal shock wave therapy (ESWT) and ultrasound (US) at trigger point (TrP) of the Scapular inter angle. Methods : In total of 24 human subjects that experience pain upon stimulation at the scapular inter angle were recruited. They were divided into three groups: control, ESWT and US group. Each group was subjected to appropriate stimulation three times per week for four weeks except the control group which had no restrictions in lifestyle. The ESWT group was subjected to Extracorporeal Shock Wave Therapy with a 2 $cm^2$ head, 20 times at speed of application of 60 pulses/min and depth of intrusion of 25 mm Whereas the US group was subject to Ultra sound therapy with 1$cm^2$ head, 1 MHz in frequency, 1.5 W/$cm^2$ of strength with five minutes of continuous application. Measurements were performed immediately prior to and at the end of the experiment. Results : There was no statistical significance in the change in muscle tension and muscle power as well as the difference between both groups before and after the experiment. VAS and VRS, all of which indicates changes in pain level, had statistically significant differences between them in pretest posttest comparisons. However, ESWT was superior to US in terms of decreasing muscle tension and pain while increasing muscle power. Conclusion : This study has made it evident that ESWT is far more reasonable to apply to TrP.