• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2013.10a
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• pp.763-764
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• 2013

A three-dimensional image capturing device and its signal processing algorithm and apparatus are presented. Three dimensional information is one of emerging differentiators that provides consumers with more realistic and immersive experiences in user interface, game, 3D-virtual reality, and 3D display. It has the depth information of a scene together with conventional color image so that full-information of real life that human eyes experience can be captured, recorded and reproduced. 20 Mega-Hertz-switching high speed image shutter device for 3D image capturing and its application to system prototype are presented[1,2]. For 3D image capturing, the system utilizes Time-of-Flight (TOF) principle by means of 20MHz high-speed micro-optical image modulator, so called 'optical resonator'. The high speed image modulation is obtained using the electro-optic operation of the multi-layer stacked structure having diffractive mirrors and optical resonance cavity which maximizes the magnitude of optical modulation[3,4]. The optical resonator is specially designed and fabricated realizing low resistance-capacitance cell structures having small RC-time constant. The optical shutter is positioned in front of a standard high resolution CMOS image sensor and modulates the IR image reflected from the object to capture a depth image (Figure 1). Suggested novel optical resonator enables capturing of a full HD depth image with depth accuracy of mm-scale, which is the largest depth image resolution among the-state-of-the-arts, which have been limited up to VGA. The 3D camera prototype realizes color/depth concurrent sensing optical architecture to capture 14Mp color and full HD depth images, simultaneously (Figure 2,3). The resulting high definition color/depth image and its capturing device have crucial impact on 3D business eco-system in IT industry especially as 3D image sensing means in the fields of 3D camera, gesture recognition, user interface, and 3D display. This paper presents MEMS-based optical resonator design, fabrication, 3D camera system prototype and signal processing algorithms.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.32-37
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• 2019

Titanium dioxide ($TiO_2$) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, $TiO_2$ film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to $TiO_2$ film. $TiO_2$ film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, $SiO_2$ layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and $TiO_2$ film. Metal-oxide-semiconductor ($TiN/TiO_2/P-type$ Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.92-97
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• 2021

The importance of processes in cryogenic environments is increasing in a way to address problems such as critical dimension (CD) narrow and bottlenecks in micro-processing. Accordingly, in this paper, we proceed with the design and analysis of Electrostatic Chuck(ESC) and Coolant in cryogenic environments, and present optimal model conditions to provide the temperature distribution analysis of ESC in these environments and the appropriate optimal design. The wafer temperature uniformity was selected as the reference model that the operating conditions of the refrigerant of the liquid nitrogen in the doubled aluminum path were excellent. Design of simulation (DOS) was carried out based on the wheel settings within the selected reference model and the classification of three mass flow and diameter case, respectively. The comparison between factors with p-value less than 0.05 indicates that the optimal design point is when five turns of coolant have a flow rate of 0.3 kg/s and a diameter of 12 mm. ANOVA determines the interactions between the above factor, indicating that mass flow is the most significant among the parameters of interests. In variable selection procedure, Case 2 was also determined to be superior through the two-Sample T-Test of the mean and variance values by dividing five coolant wheels into two (Case 1 : 2+3, Case 2: 3+2). Finally, heat transfer analysis processes such as final difference method (FDM) and heat transfer were also performed to demonstrate the feasibility and adequacy of the analysis process.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.101-106
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• 2022

In this paper, WBG semiconductor such as SiC and GaN were applied as power switches for LCL circuit that can be applied to satellite power systems and the test results of the LCL circuit are reported. P-channel MOSFET and N-channel MOSFET, which were generally used in the conventional LCL circuit, were applied together to expand the utility of the test results. The design and stability evaluation were performed using a Micro Cap circuit simulation program. For the test circuit, a module using each switch was manufactured, and a total of 5 modules were manufactured and the steady state and transient state characteristics were compared. From the experimental results, the LCL circuit for power supply of the satellite power system constructed in this paper satisfied the constant current and constant voltage conditions under various operating conditions. The P-channel MOSFET showed the lowest efficiency characteristics, and the three N-channel switches of Si, SiC and GaN showed relatively high efficiency characteristics of up to 99.05% or more. In conclusion, it was verified that the on-resistor of the switch had a direct effect on the efficiency and loss characteristics.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.148-154
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• 2022

As the 4th industrial age approaches, the demand for semiconductors is increasing enough to be used in all electronic devices. At the same time, semiconductor technology is also developing day by day, leading to ultraprecision and low power consumption. Semiconductors that keep getting smaller generate heat because the energy density increases, and the generated heat changes the shape of the semiconductor package, so it is important to manage. The temperature change is not only self-heating of the semiconductor package, but also heat generated by external damage. If the package is deformed, it is necessary to manage it because functional problems and performance degradation such as damage occur. The package burn in test in the post-process of semiconductor production is a process that tests the durability and function of the package in a high-temperature environment, and heat dissipation performance can be evaluated. In this paper, we intend to review a new material formulation that can improve the performance of the adapter, which is one of the parts of the test socket used in the burn-in test. It was confirmed what characteristics the basic base showed when polyamide, a high-molecular material, and alumina, which had high thermal conductivity, were mixed for each magnification. In this study, functional evaluation was also carried out by injecting an adapter, a part of the test socket, at the same time as the specimen was manufactured. Verification of stiffness such as tensile strength and flexural strength by mixing ratio, performance evaluation such as thermal conductivity, and manufacturing of a dummy device also confirmed warpage. As a result, it was confirmed that the thermal stability was excellent. Through this study, it is thought that it can be used as basic data for the development of materials for burn-in sockets in the future.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.28-32
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• 2023

Recently, the use of stable lithium nanostructures as substrates and electrodes for secondary batteries can be a fundamental alternative to the development of next-generation system semiconductor devices. However, lithium structures pose safety concerns by severely limiting battery life due to the growth of Li dendrites during rapid charge/discharge cycles. Also, enabling long cyclability of high-voltage oxide cathodes is a persistent challenge for all-solid-state batteries, largely because of their poor interfacial stabilities against oxide solid electrolytes. For the development of next-generation system semiconductor devices, solid electrolyte nanostructures, which are used in high-density micro-energy storage devices and avoid the instability of liquid electrolytes, can be promising alternatives for next-generation batteries. Nevertheless, poor lithium ion conductivity and structural defects at room temperature have been pointed out as limitations. In this study, a low-dimensional Graphene Oxide (GO) structure was applied to demonstrate stable operation characteristics based on Li+ ion conductivity and excellent electrochemical performance. The low-dimensional structure of GO-based solid electrolytes can provide an important strategy for stable scalable solid-state power system semiconductor applications at room temperature. The device using uncoated bare NCA delivers a low capacity of 89 mA h g-1, while the cell using GO-coated NCA delivers a high capacity of 158 mA h g−1 and a low polarization. A full Li GO-based device was fabricated to demonstrate the practicality of the modified Li structure using the Li-GO heterointerface. This study promises that the lowdimensional structure of Li-GO can be an effective approach for the stabilization of solid-state power system semiconductor architectures.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.93-98
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• 2023

As semiconductor devices become highly integrated and process difficulty increases, the need for highly sensitive sensors that can detect micro leaks is increasing. However, the noise contained in the CCD sensor itself acts as an obstacle to detecting fine leaks. In this study, integration time was changed for each condition, the sensor was cooled to 0℃, and the dark voltage level was measured to confirm through experiment the characteristics of the temporal noise included in the CCD sensor, a component of OES (Optical Emission Spectroscopy). When integration time was reduced from 30msec to 10msec, the dark voltage level decreased by about 20.5 % from an average of 151.5mV to 120.5mV. In the case of cooling device, Peltier elements were selected because of their simple structure and small size. During temperature cooling, the target temperature was controlled to within ±0.5℃ through PID control. When cooled from 20℃ to 0℃ using this cooling device, it was confirmed that the dark voltage level decreased by about 7% from an average of 147.0mV to 137.0mV.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.130-135
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• 2023

Plasma-resistant ceramic (PRC) is a material used to prevent internal damage in plasma processing equipment for semiconductors and displays. The challenge is to suppress particles falling off from damaged surfaces and increase retention time in order to improve productivity and introduce the latest miniaturization process. Here, we confirmed the effect of suppressing plasma deterioration and reducing the etch rate through surface treatment of existing PRC with an initial illumination level of 200 nm. In particular, quartz glass showed a decrease in etch rate of up to 10%. Furthermore, it is believed that micro-scale secondary particles formed on the microstructure of each material grow as crystals during the fluoridation process. This is a factor that can act as a killer defect when dropped, and is an essential consideration when analyzing plasma resistance. The plasma etching suppression effect of the initial illumination is thought to be due to partial over etching at the dihedral angle of the material due to the sputtering of re-emission of Ar+-based cations. This means that plasma damage due to densification can also be interpreted in existing PRC studies. The research results are significant in that they present surface treatment conditions that can be directly applied to existing PRC for mass production and a new perspective to analyze plasma resistance in addition to simple etching rates.

• Journal of Adhesion and Interface
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• v.10 no.3
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• pp.127-133
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• 2009

Acrylic pressure sensitive adhesives (PSAs) are used in various field of high-technology industries such as semiconductor, display, mobile, automobile, and so on. Because of they have high durabilities and can be easily introduced functional groups in their molecular structures. PSA perfomances has an effect on their applications in industry process operation, reliability of final products. In this study, PSA performances as a function of fim thickness which is one of the impact factors effects on PSA performances will be investigated using combinatorial methods. Acrylic PSAs are synthesized using 2-ethylhexyl acrylate and acrylic acid. Thickness-gradient of acrylic PSA sample is made by a micro applicator. We compare general coating method with thickness-gradient coating method and evaluate the reappearance of combinatorial methods compared with existing coating method. Thickness-gradient of acrylic PSA sample shows rough and broad data tendency.

• Journal of the Korean Society for Nondestructive Testing
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• v.23 no.5
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• pp.475-479
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• 2003

Traditional ultrasonic evaluation to detect micro/small surface cracks is the pulse-echo technique using the normal immersion transducer with high frequency, or the angle beam transducer with surface wave. It is difficult to make the automatic ultrasonic system that is to detect micro and small surface crack and position on the large structure like steel and ceramic rolls, because of the huge data of inspection and the ambiguous position data of transducer. The aim of this study using the high precision scanning acoustic microscope with 10MHz large aperture transducer was to display the real time A, B, C-scan for the automatic ultrasonic system in order to detect the existence and position of surface crack. The ultrasonic method with large aperture transducer was improved the scanning time and speed over 10times faster than traditional methods.