• Title/Summary/Keyword: Micorwave plasma CVD

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Growth of Carbon Nanotubes by Microwave Plasma Enhanced Chemical Vapor Deposition (마이크로웨이브 플라즈마 화학기상증착법에 의한 탄소나노튜브의 성장특성)

  • Choi Sung-Hun;Lee Jae-Hyeoung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.6
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    • pp.501-506
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    • 2006
  • Carbon nanotubes (CNTs) were grown with a microwave plasma enhanced chemical vapor deposition (MPECVD) method, which has been regarded as one of the most promising candidates for the synthesis of CNTs due to the vertical alignment, the low temperature and the large area growth. MPECVD used methane ($CH_4$) and hydrogen ($H_2$) gas for the growth of CNTs. 10 nm thick Ni catalytic layer were deposited on the Ti coated Si substrate by RF magnetron sputtering method. In this work, the pretreatment was that the Ni catalytic layer in different microwave power (600, 700, and 800 W). After that, CNTs deposited on different pressures (8, 12, 16, and 24 Torr) and grown same microwave power (800 W). SEM (Scanning electron microscopy) images showed Ni catalytic layer diameter and density variations were dependent with their pretreatment conditions. Raman spectroscopy of CNTs shows that $I_D/I_G$ ratios and G-peak positions vary with pretreatment conditions.

GROWTH OF CARBON NANOTUBES ON GLASS BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION (마이크로웨이브 플라즈마 화학기상증착장비를 사용한 유리기판상의 탄소나노튜브의 합성)

  • Lee, Jae-Hyeoung;Choi, Sung-Hun;Choi, Won-Seok;Hong, Byung-You;Kim, Jeong-Tae;Lim, Dong-Gun;Yang, Kea-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.99-100
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    • 2005
  • We have grown carbon nanotubes (CNTs) with a microwave plasma chemical vapor deposition (MPECVD) method, which has been regard as one of the most promising candidates for the synthesis of CNTs due to the vertical alignment, the low temperature and the large area growth. We use methane ($CH_4$) and hydrogen ($H_2$) gas for the growth of CNTs. 60 nm thick Ni catalytic layer were deposited on the TiN coated glass substrate by RF magnetron sputtering method. In this work, we report the effects of pressure on the growth of CNTs. We have changed pressure of processing (10 $\sim$ 20 Torr) deposition of CNTs. SEM (Scanning electron microscopy) images show diameter, length and cross section state CNTs.

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