• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.8
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• pp.1566-1571
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• 2009

The discharge electrodes in ac PDP are coated with dielectric layer, and transparent MgO thin films are deposited on the dielectric layer. The main role of the MgO thin films in ac PDP is to protect the dielectric layer from sputtering by ion bombardment in the glow-discharge plasma. An additional important role of the MgO thin film is the high secondary electron emission coefficient which leads the low firing voltage and low cost of the PDP. In this paper, we investigated the relations of the crystal orientation about deposition thickness, deposition rate, temperature of substrate, and distance between the MgO tablet and the substrate. Additionally, we investigated the discharge characteristics of the AC PDP using nano-powder MgO tablet

• Journal of the Semiconductor & Display Technology
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• v.7 no.2
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• pp.63-67
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• 2008

The MgO protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by ion beam assisted deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, oxygen neutral beam assisted deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in F/$F^+$ centers, crystal orientation, surface morphology of the MgO thin film, and the discharge characteristics of AC PDP. The lowest firing voltage $(V_f)$ and the highest secondary electron emission coefficient $(\gamma)$ were obtained when the neutral beam energy was 300 eV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.3
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• pp.120-123
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• 2005

The 5 mol% ZnO doped $LiNbO_3$ film and the 2 mol% MgO doped $LiNbO_3$ film were grown on the $LiNbO_3$ (001) substrate by liquid phase epitaxy (LPE) method with $Li_2CO_3-V_2O_5$ flux system. The crytsallinity and the lattice mismatch between $Zn:LiNbO_3$, film and $Mg:LiNbO_3$, film were analyzed by x-ray rocking curve (XRC). In addition, the ZnO and MgO distribution in the cross-section of the multilayer thin films was observed using electron probe micro analyzer (EPMA).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.354-357
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• 1999

This paper describes on the electrical and physical charateristics thin-film type Pt-RTD\\`s on Si wafers, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to SiO$_2$ layer. The MgO medium layer had the properties of improving Pt adhesion to SiO$_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. In the analysis of properties of Pt-RTD, TCR value had 3927 ppm/$^{\circ}C$ and liner in the temperature range of room temperature to 40$0^{\circ}C$

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.547-550
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• 1999

Optical and electrical properties of MgO-CaO films as a protective layer for AC plasma display panel were studied. When the [(CaO/(MgO+CaO)] ratio of evaporation starting materials was optimum composition, 0.1, firing voltage and memory margin of the film were 176V and 0.5, respectively. When [CaO/(CaO+MgO)] was 0, 0.1 and 0.2, memory margin was 0.39, 0.5 and 0.41, respectively, and surface roughness of films was $27.7\AA$, $21.1\AA$ and $40.3\AA$, respectively. It was thought that memory margin had a reverse-relation with surface roughness. The density of film was calculated by measuring the refractive index of film. The density of MgO film was 3.21g/㎤ and the density of film, when [CaO/(CaO+MgO)] was 0.1, was 3.632g/㎤. The mixture of MgO-CaO films showed a good transmittance property in the visual range.

• Current Photovoltaic Research
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• v.4 no.1
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• pp.25-29
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• 2016

$Eu^{3+}$-activated $MgMoO_4$ phosphor thin films were grown at $400^{\circ}C$ on quartz substrates by radio-frequency magnetron sputter deposition from a 15 mol% Eu-doped $MgMoO_4$ target. After the deposition, the phosphor thin films were annealed at several temperatures for 30 min in air. The influence of thermal annealing temperature on the structural and optical properties of $MgMoO_4:Eu^{3+}$ phosphor thin films was investigated by using X-ray diffraction (XRD), photoluminescence (PL), and ultraviolet-visible spectrophotometry. The transmittance, optical band gap, and intensities of the luminescence and excitation spectra of the thin films were found to depend on the thermal annealing temperature. The XRD patterns indicated that all the thin films had a monoclinic structure with a main (220) diffraction peak. The highest average transmittance of 91.3% in the wavelength range of 320~1100 nm was obtained for the phosphor thin film annealed at $800^{\circ}C$. At this annealing temperature the optical band gap energy was estimated as 4.83 eV. The emission and excitation spectra exhibited that the $MgMoO_4:Eu^{3+}$ phosphor thin films could be effectively excited by near ultraviolet (281 nm) light, and emitted the dominant 614 nm red light. The results show that increasing RTA temperature can enhance $Eu^{3+}$ emission and excitation intensity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.811-816
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• 2012

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.186-189
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• 2010

Nano-sized MgO single crystal powders have recently been reported to emit ultraviolet by stimulation of electrons in a vacuum. In this study, nanocrystalline MgO powders were applied to a xenon plasma flat fluorescent lamp (FFL) for a liquid crystal display backlight to improve its emission efficiency through the extra ultraviolet from the nano-MgO crystals. For comparison, a MgO nano-thin film was applied directly on the phosphors inside a lamp panel through e-beam evaporation. Adding MgO nano-crystal powders to the phosphors improved the luminance and efficiency of FFLs by around 20% and MgO nano-crystal coverage of 40% of the phosphor provided the best FFL emission characteristics; however, application of MgO thin film to the phosphors degraded the emission characteristics, even compared to FFLs without MgO. This was due to insufficient ultraviolet stimulation of the phosphors and the crystallinity and low secondary electron coefficient of the MgO.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.687-690
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• 2009

It has been recently reported that nano-sized MgO single crystal powders emit ultraviolet by stimulation of electrons under vacuum condition. Therefore, in this study, nano-crystalline MgO powders were applied to a xenon plasma flat fluorescent lamp for LCD backlight to improve emission efficiency of the lamp by help of extra ultraviolet from nano-MgO. For comparison with nano-crystalline MgO powders, MgO nano-thin film was applied directly on phosphors inside a lamp panel through e-beam evaporation The luminance and efficiency of FFL with an addition of MgO nano-crystal powders on phosphors were improved by around 20%. Application of MgO thin film to phosphors worsened the emission characteristics of FFLs, even rather than FFL without MgO. The reason came from insufficient stimulation of phosphors by UV, crystallinity of MgO, and low secondary electron coefficient.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1108-1114
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• 1998

$BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]