• 한국자기학회지
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• 제23권1호
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• pp.7-11
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• 2013

본 연구에서는 $TiO_2$/Co/Pd 구조의 다층박막을 마그네트론 스퍼터링으로 GaAs(100), MgO(100), MgO(111), Si(100), glass와 같은 다양한 종류의 기판에 대해 제작하여 수직 자기 이방성에 대해서 연구하였다. 산소 분압 등의 $TiO_2$ 층의 증착 조건과 기판의 종류에 따른 Co/Pd 층의 수직 자기 이방성을 측정하였다. 그 결과, $TiO_2$ 층이 5 nm 이하 일 때는 기판의 종류에 영향을 받지만, 그 이상의 두께에 대해서는 MgO(111)을 제외한 기판의 영향이 크지 않음을 확인하였고, 이는 $TiO_2$ 씨앗층의 성장조건과 계면의 거칠기, 결정방향 등과 관련이 있음을 발견하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.877-881
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• 2006

We obtained sputtering yields for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found to have less $24^{\sim}^30%$ sputtering yield values from 0.24 atoms/ion up to 0.36 atoms/ion than MgO layers with the values from 0.36 atoms/ion up to 0.45 atoms/ion for irradiated $Ga^+$ ion beam whose energies ranged from 10 keV to 14 keV. And $MgAl_2O_4$ layers have been found to have lowest sputtering yield values from 0.88 up to 0.11. It is also found that $MgAl_2O_4/MgO$ and MgO have secondary electron emission $coefficient({\gamma})$ values from 0.09 up to 0.12 for $Ne^+$ ion whose energies ranged from 50 eV to 200 eV.

• 한국세라믹학회지
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• 제35권7호
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• pp.715-720
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• 1998

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.44-44
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• 2008

GdBCO coated conductor have been fabricated using reactive co-evaporation. The batch type co-deposition system was specially designed and was named EDDC (evaporation using drum in dual chamber) that is possible to deposit superconducting layer with optimum composition ratio of materials at temperature over $700^{\circ}C$ and several mTorr of oxygen. The IBAD-MgO substrate with the architecture of LaMnO3(LMO)/IBAD-MgO/Hastelloy was used for coated conductor. In this study, GdBCO superconducting layer was deposited on IBAD-MgO substrate at optimal oxygen partial pressure (pO2) and deposition temperature. After fabrication of GdBCO coated conductor, critical current density was measured by 4-probe method. Surface morphology and texture of GdBCO coated conductors were analyzed by the SEM and XRD, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.39-43
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• 1997

Effects of B$_2$O$_3$ addition in the Li$_2$O-MgO-MgF$_2$-SiO$_2$g1ass system were investigated in order to make glass-ceramics for low temperature firing substrate. Base glass was made by melting at 145$0^{\circ}C$ . This glass was analyzed by THA and DTA to settle nucleation and crystallization temperature. After crystallization. crystal phase and microstructure were absorvated by XRD and SEM. Glass powders were made by water swelling method. Average particle size was 5.44${\mu}{\textrm}{m}$

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1644-1648
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• 2002

The relationships between MgO deposition conditions and firing voltage of AC PDP were investigated as a function of ambient temperature. Substrate temperature and growth rate were selected as the major parameters that can affect the properties of MgO most significantly. Firing voltages increase with increasing temperature regardless of deposition conditions of the MgO layer. However, the relative magnitude of the firing voltage variation decrease with increasing substrate temperature and decreasing deposition speed. It was also found that the sample obtained at the condition of lower deposition rate shows better dynamic margin characteristics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1523-1524
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• 2006

There arc several important issues in AC PDP researches such as cost reduction, reliability, and good image quality. The properties of MgO layer is thought to be one of the most important (actors that affects the panel reliability through the firing voltage variation. The MgO thin film mainly has (111), (200) and (220) crystal orientation. It is reported that (111)-oriented film helps decreasing the discharge voltage, and (200)-oriented film improves the misfiring on high temperature and the image sticking. In this study, we investigated the relations between the crystal orientation and e-beam evaporation process parameters such asdeposition rate, temperature of substrate, and distance between the target(MgO tablet) and the substrate.

• 대한금속재료학회지
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• 제47권6호
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• pp.383-390
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• 2009

The effects that processing atmospheres and alloy composition have on the wetting characteristics of Al-Mg alloys on the $SiO_{2}$ substrate were investigated by measuring the wetting angles. It was observed that the wetting behavior of the Al-Mg alloys on the $SiO_{2}$ substrate vary depending on the Mg content of the alloys and atmospheres. The results showed that the contact angle decreases with increasing Mg content, angle is generally larger in the $N_{2}$ atmosphere than in the Ar atmosphere. We discussed the validity of the results obtained from the wetting test on the basis of recent theories and the results observed from the actual penetration tests.

• The Korean Journal of Ceramics
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• 제6권1호
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• pp.68-73
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• 2000

The effects of oxygen annealing on the carbon content in MgO thin films were investigated, MgO thin films were deposited on Si(100) substrate at different temperatures of 400 to $700^{\circ}C$ and different deposition rates of 3.4 to 11.6$\AA$/min. Using rf magnetron sputtering method. Carbon content change on the surface of MgO thin films with the oxygen annealing at different temperatures was investigated using various method. The carbon content decreased as the annealing temperature increased. $Pb(Zr_{0.53}Ti_{0.47})O_3$(PZT) thin films were deposited on the MgO/Si(100) substrates. The effects of carbon content on the phase formation and the electrical properties of PZT thin films were also investigated.

• 한국세라믹학회지
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• 제30권7호
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• pp.578-588
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• 1993

Highly c-axis oriented ferroelectric PbTiO3 thin films were deposited on MgO single crystal substrates by RF magnetron sputtering. We have studied the effects of substrate temperature, RF input power, gas comosition, gas pressure and deposition rate on the chemical and structural characteristics of PbTiO3 thin films. The epitaxy relationship of c-axis oriented films was found to be PbTiO3{100}//MgO(100) and their microstructures were highly mosaic. It was found that the most important parameter to achieve epitaxial PbTiO3 films was the substrate temperature. The activation energy for the epitaxy formation was about 0.92eV. Lower gas pressure and RF input power were favorable for the formation of epitaxial c-axis orientation. It was also found that the optimum oxygen content in Ar gas was 10% to obtain the stoichiometric PbTiO3 composition.